Produkte > DIOTEC SEMICONDUCTOR > Alle Produkte des Herstellers DIOTEC SEMICONDUCTOR (30460) > Seite 508 nach 508
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3.0SMCJ17A | DIOTEC SEMICONDUCTOR |
 Category: Unidirectional SMD transil diodesDescription: Diode: TVS; 3kW; 18.9÷21V; 108.7A; unidirectional; ±5%; SMC Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 17V Breakdown voltage: 18.9...21V Max. forward impulse current: 108.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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5.0SMCJ17A-AQ | DIOTEC SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 5kW; 18.9÷20.9V; 181.2A; unidirectional; ±5%; SMC Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 17V Breakdown voltage: 18.9...20.9V Max. forward impulse current: 181.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMC Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| DI7A5N65D2K-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 25A; 62.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.7A Pulsed drain current: 25A Power dissipation: 62.5W Case: D2PAK; TO263AB Gate-source voltage: ±30V On-state resistance: 0.43Ω Mounting: SMD Gate charge: 18.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Application: automotive industry |
Produkt ist nicht verfügbar |
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1.5KE30CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 30V; 38A; bidirectional; ±5%; Ø5,4x7,5mm; 1.5kW Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 38A Semiconductor structure: bidirectional Tolerance: ±5% Case: Ø5,4x7,5mm Mounting: THT Leakage current: 5µA Kind of package: Ammo Pack |
auf Bestellung 956 Stücke: Lieferzeit 14-21 Tag (e) |
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P4SMA260A | DIOTEC SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 260V; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Mounting: SMD Semiconductor structure: unidirectional Case: SMA Leakage current: 5µA Kind of package: reel; tape Breakdown voltage: 260V Peak pulse power dissipation: 0.4kW Tolerance: ±5% |
Produkt ist nicht verfügbar |
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1N4006 | DIOTEC SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 1A; Ammo Pack; Ifsm: 30A; DO41; Ir: 50uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Max. load current: 5.4A Leakage current: 50µA Reverse recovery time: 1.5µs |
auf Bestellung 2240 Stücke: Lieferzeit 14-21 Tag (e) |
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| DI1A5N60D1 | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.97A; Idm: 6A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.97A Pulsed drain current: 6A Power dissipation: 25W Case: DPAK; TO252AA Gate-source voltage: ±30V On-state resistance: 8Ω Mounting: SMD Gate charge: 7.9nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DI5A7N65D1K-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 3.6A; Idm: 25A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.6A Pulsed drain current: 25A Power dissipation: 36W Case: DPAK; TO252AA Gate-source voltage: ±30V On-state resistance: 0.43Ω Mounting: SMD Gate charge: 18.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Application: automotive industry |
Produkt ist nicht verfügbar |
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TGL34-180CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 150W; 180V; 600mA; bidirectional; ±5%; MiniMELF plastic Type of diode: TVS Peak pulse power dissipation: 0.15kW Max. off-state voltage: 154V Breakdown voltage: 180V Max. forward impulse current: 0.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: MiniMELF plastic Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
auf Bestellung 2455 Stücke: Lieferzeit 14-21 Tag (e) |
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3.0SMCJ160CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 178÷198V; 11.5A; bidirectional; ±5%; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 160V Breakdown voltage: 178...198V Max. forward impulse current: 11.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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M7 | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 27A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.1V Max. load current: 5A Max. forward impulse current: 27A Kind of package: reel; tape |
auf Bestellung 274949 Stücke: Lieferzeit 14-21 Tag (e) |
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| 1N4004GP | DIOTEC SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 1A; Ammo Pack; Ifsm: 27A; DO204AC,DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Kind of package: Ammo Pack Max. forward impulse current: 27A Case: DO41; DO204AC Max. forward voltage: 1.1V Max. load current: 5.4A Leakage current: 5µA Reverse recovery time: 1.5µs |
Produkt ist nicht verfügbar |
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MM3Z6B2-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 6.2V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
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| BC848C-C | DIOTEC SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 0.1A; 200mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Pulsed collector current: 0.2A Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
Produkt ist nicht verfügbar |
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| MMBTA92-AQ | DIOTEC SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 250mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23 Current gain: 80...200 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
Produkt ist nicht verfügbar |
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| 1N4005GP | DIOTEC SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 27A; DO204AC,DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Kind of package: Ammo Pack Max. forward impulse current: 27A Case: DO41; DO204AC Max. forward voltage: 1.1V Max. load current: 5.4A Leakage current: 5µA Reverse recovery time: 1.5µs |
Produkt ist nicht verfügbar |
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3.0SMCJ170A | DIOTEC SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 3kW; 189÷210V; 10.9A; unidirectional; ±5%; SMC Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 170V Breakdown voltage: 189...210V Max. forward impulse current: 10.9A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| DI150N04PQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 400A; 125W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 130A Pulsed drain current: 400A Power dissipation: 125W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 1.45mΩ Mounting: SMD Gate charge: 61nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| 2N7002KPW-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1.2A; 0.275W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.31A Pulsed drain current: 1.2A Power dissipation: 0.275W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Application: automotive industry |
Produkt ist nicht verfügbar |
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| 1N4001S | DIOTEC SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 1A; Ammo Pack; Ifsm: 27A; A405; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 27A Case: A405 Max. forward voltage: 1V Max. load current: 5.4A Leakage current: 5µA Reverse recovery time: 1.5µs |
Produkt ist nicht verfügbar |
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| 1N4002GP | DIOTEC SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 1A; Ammo Pack; Ifsm: 27A; DO204AC,DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Kind of package: Ammo Pack Max. forward impulse current: 27A Case: DO41; DO204AC Max. forward voltage: 1.1V Max. load current: 5.4A Leakage current: 5µA Reverse recovery time: 1.5µs |
Produkt ist nicht verfügbar |
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| 1N4003GP | DIOTEC SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 1A; Ammo Pack; Ifsm: 27A; DO204AC,DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Kind of package: Ammo Pack Max. forward impulse current: 27A Case: DO41; DO204AC Max. forward voltage: 1.1V Max. load current: 5.4A Leakage current: 5µA Reverse recovery time: 1.5µs |
Produkt ist nicht verfügbar |
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BY8 | DIOTEC SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 8kV; 0.5A; Ammo Pack; Ifsm: 30A; Ø7,3x22mm Type of diode: rectifying Mounting: THT Max. off-state voltage: 8kV Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: high voltage Kind of package: Ammo Pack Max. forward impulse current: 30A Case: Ø7,3x22mm Max. forward voltage: 8V Leakage current: 1µA |
auf Bestellung 153 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB250A | DIOTEC SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 237÷263V; 1.7A; unidirectional; ±5%; SMB Mounting: SMD Max. forward impulse current: 1.7A Breakdown voltage: 237...263V Leakage current: 5µA Kind of package: reel; tape Type of diode: TVS Tolerance: ±5% Case: SMB Max. off-state voltage: 214V Peak pulse power dissipation: 0.6kW Semiconductor structure: unidirectional |
auf Bestellung 2620 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB250CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 237÷263V; 1.7A; bidirectional; ±5%; SMB; reel,tape Mounting: SMD Max. forward impulse current: 1.7A Breakdown voltage: 237...263V Leakage current: 5µA Kind of package: reel; tape Type of diode: TVS Tolerance: ±5% Case: SMB Max. off-state voltage: 214V Peak pulse power dissipation: 0.6kW Semiconductor structure: bidirectional |
auf Bestellung 4825 Stücke: Lieferzeit 14-21 Tag (e) |
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ER2M | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 2A; 75ns; SMB; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 2A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Max. forward voltage: 1.7V Max. load current: 10A Max. forward impulse current: 50A Leakage current: 5µA Kind of package: reel; tape |
auf Bestellung 2800 Stücke: Lieferzeit 14-21 Tag (e) |
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FR1D | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Case: SMA Features of semiconductor devices: fast switching Max. forward voltage: 1.3V Max. load current: 6A Max. forward impulse current: 30A Reverse recovery time: 150ns Kind of package: reel; tape |
auf Bestellung 2887 Stücke: Lieferzeit 14-21 Tag (e) |
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| DI035N06PQ2-AQ | DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 20A; Idm: 110A; 35.7W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Pulsed drain current: 110A Power dissipation: 35.7W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 14.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DI135N06PQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 85A; Idm: 560A; 92.6W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 85A Pulsed drain current: 560A Power dissipation: 92.6W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DI0A35N06PGK-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 1.2A; 223mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.35A Pulsed drain current: 1.2A Power dissipation: 223mW Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 1.9nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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TGL41-16CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 16V; 18.6A; bidirectional; ±5%; MELF plastic Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13.6V Breakdown voltage: 16V Max. forward impulse current: 18.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: MELF plastic Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
auf Bestellung 1641 Stücke: Lieferzeit 14-21 Tag (e) |
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TGL41-18CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 18V; 16.5A; bidirectional; ±5%; MELF plastic Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 16.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: MELF plastic Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
auf Bestellung 180 Stücke: Lieferzeit 14-21 Tag (e) |
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TGL41-22CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 22V; 13.7A; bidirectional; ±5%; MELF plastic Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18.8V Breakdown voltage: 22V Max. forward impulse current: 13.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: MELF plastic Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
auf Bestellung 2180 Stücke: Lieferzeit 14-21 Tag (e) |
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TGL41-24CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 24V; 12.6A; bidirectional; ±5%; MELF plastic Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 12.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: MELF plastic Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
auf Bestellung 4460 Stücke: Lieferzeit 14-21 Tag (e) |
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TGL41-27CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 27V; 11A; bidirectional; ±5%; MELF plastic Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 23.1V Breakdown voltage: 27V Max. forward impulse current: 11A Semiconductor structure: bidirectional Tolerance: ±5% Case: MELF plastic Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
auf Bestellung 3085 Stücke: Lieferzeit 14-21 Tag (e) |
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| 3.0SMCJ17A |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 18.9÷21V; 108.7A; unidirectional; ±5%; SMC
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...21V
Max. forward impulse current: 108.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 18.9÷21V; 108.7A; unidirectional; ±5%; SMC
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...21V
Max. forward impulse current: 108.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| 5.0SMCJ17A-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 5kW; 18.9÷20.9V; 181.2A; unidirectional; ±5%; SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...20.9V
Max. forward impulse current: 181.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 5kW; 18.9÷20.9V; 181.2A; unidirectional; ±5%; SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...20.9V
Max. forward impulse current: 181.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
| DI7A5N65D2K-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 25A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 25A
Power dissipation: 62.5W
Case: D2PAK; TO263AB
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 25A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 25A
Power dissipation: 62.5W
Case: D2PAK; TO263AB
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
Produkt ist nicht verfügbar
| 1.5KE30CA |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 30V; 38A; bidirectional; ±5%; Ø5,4x7,5mm; 1.5kW
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 38A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: Ø5,4x7,5mm
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 30V; 38A; bidirectional; ±5%; Ø5,4x7,5mm; 1.5kW
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 38A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: Ø5,4x7,5mm
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
auf Bestellung 956 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 200+ | 0.36 EUR |
| 239+ | 0.3 EUR |
| 264+ | 0.27 EUR |
| 334+ | 0.21 EUR |
| 353+ | 0.2 EUR |
| P4SMA260A |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 260V; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Mounting: SMD
Semiconductor structure: unidirectional
Case: SMA
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 260V
Peak pulse power dissipation: 0.4kW
Tolerance: ±5%
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 260V; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Mounting: SMD
Semiconductor structure: unidirectional
Case: SMA
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 260V
Peak pulse power dissipation: 0.4kW
Tolerance: ±5%
Produkt ist nicht verfügbar
| 1N4006 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; Ammo Pack; Ifsm: 30A; DO41; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Max. load current: 5.4A
Leakage current: 50µA
Reverse recovery time: 1.5µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; Ammo Pack; Ifsm: 30A; DO41; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Max. load current: 5.4A
Leakage current: 50µA
Reverse recovery time: 1.5µs
auf Bestellung 2240 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 417+ | 0.17 EUR |
| 532+ | 0.13 EUR |
| 926+ | 0.077 EUR |
| 1441+ | 0.05 EUR |
| 2033+ | 0.035 EUR |
| 2240+ | 0.031 EUR |
| DI1A5N60D1 |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.97A; Idm: 6A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.97A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252AA
Gate-source voltage: ±30V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.97A; Idm: 6A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.97A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252AA
Gate-source voltage: ±30V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DI5A7N65D1K-AQ |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.6A; Idm: 25A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 25A
Power dissipation: 36W
Case: DPAK; TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.6A; Idm: 25A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 25A
Power dissipation: 36W
Case: DPAK; TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
Produkt ist nicht verfügbar
| TGL34-180CA |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 150W; 180V; 600mA; bidirectional; ±5%; MiniMELF plastic
Type of diode: TVS
Peak pulse power dissipation: 0.15kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 0.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: MiniMELF plastic
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 150W; 180V; 600mA; bidirectional; ±5%; MiniMELF plastic
Type of diode: TVS
Peak pulse power dissipation: 0.15kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 0.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: MiniMELF plastic
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
auf Bestellung 2455 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 450+ | 0.16 EUR |
| 920+ | 0.078 EUR |
| 1040+ | 0.069 EUR |
| 1115+ | 0.064 EUR |
| 3.0SMCJ160CA |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 178÷198V; 11.5A; bidirectional; ±5%; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 160V
Breakdown voltage: 178...198V
Max. forward impulse current: 11.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 178÷198V; 11.5A; bidirectional; ±5%; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 160V
Breakdown voltage: 178...198V
Max. forward impulse current: 11.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| M7 |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 27A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. load current: 5A
Max. forward impulse current: 27A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 27A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. load current: 5A
Max. forward impulse current: 27A
Kind of package: reel; tape
auf Bestellung 274949 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1775+ | 0.041 EUR |
| 3225+ | 0.022 EUR |
| 4400+ | 0.016 EUR |
| 6025+ | 0.012 EUR |
| 6350+ | 0.011 EUR |
| 1N4004GP |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ammo Pack; Ifsm: 27A; DO204AC,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 27A
Case: DO41; DO204AC
Max. forward voltage: 1.1V
Max. load current: 5.4A
Leakage current: 5µA
Reverse recovery time: 1.5µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ammo Pack; Ifsm: 27A; DO204AC,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 27A
Case: DO41; DO204AC
Max. forward voltage: 1.1V
Max. load current: 5.4A
Leakage current: 5µA
Reverse recovery time: 1.5µs
Produkt ist nicht verfügbar
| MM3Z6B2-AQ |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
| BC848C-C |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Pulsed collector current: 0.2A
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Pulsed collector current: 0.2A
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
| MMBTA92-AQ |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 250mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 250mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
| 1N4005GP |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 27A; DO204AC,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 27A
Case: DO41; DO204AC
Max. forward voltage: 1.1V
Max. load current: 5.4A
Leakage current: 5µA
Reverse recovery time: 1.5µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 27A; DO204AC,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 27A
Case: DO41; DO204AC
Max. forward voltage: 1.1V
Max. load current: 5.4A
Leakage current: 5µA
Reverse recovery time: 1.5µs
Produkt ist nicht verfügbar
| 3.0SMCJ170A |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 189÷210V; 10.9A; unidirectional; ±5%; SMC
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 170V
Breakdown voltage: 189...210V
Max. forward impulse current: 10.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 189÷210V; 10.9A; unidirectional; ±5%; SMC
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 170V
Breakdown voltage: 189...210V
Max. forward impulse current: 10.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| DI150N04PQ |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 400A; 125W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 400A
Power dissipation: 125W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 1.45mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 400A; 125W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 400A
Power dissipation: 125W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 1.45mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| 2N7002KPW-AQ |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1.2A; 0.275W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Pulsed drain current: 1.2A
Power dissipation: 0.275W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1.2A; 0.275W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Pulsed drain current: 1.2A
Power dissipation: 0.275W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
Produkt ist nicht verfügbar
| 1N4001S |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; Ammo Pack; Ifsm: 27A; A405; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 27A
Case: A405
Max. forward voltage: 1V
Max. load current: 5.4A
Leakage current: 5µA
Reverse recovery time: 1.5µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; Ammo Pack; Ifsm: 27A; A405; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 27A
Case: A405
Max. forward voltage: 1V
Max. load current: 5.4A
Leakage current: 5µA
Reverse recovery time: 1.5µs
Produkt ist nicht verfügbar
| 1N4002GP |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ammo Pack; Ifsm: 27A; DO204AC,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 27A
Case: DO41; DO204AC
Max. forward voltage: 1.1V
Max. load current: 5.4A
Leakage current: 5µA
Reverse recovery time: 1.5µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ammo Pack; Ifsm: 27A; DO204AC,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 27A
Case: DO41; DO204AC
Max. forward voltage: 1.1V
Max. load current: 5.4A
Leakage current: 5µA
Reverse recovery time: 1.5µs
Produkt ist nicht verfügbar
| 1N4003GP |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ammo Pack; Ifsm: 27A; DO204AC,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 27A
Case: DO41; DO204AC
Max. forward voltage: 1.1V
Max. load current: 5.4A
Leakage current: 5µA
Reverse recovery time: 1.5µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ammo Pack; Ifsm: 27A; DO204AC,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 27A
Case: DO41; DO204AC
Max. forward voltage: 1.1V
Max. load current: 5.4A
Leakage current: 5µA
Reverse recovery time: 1.5µs
Produkt ist nicht verfügbar
| BY8 |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 8kV; 0.5A; Ammo Pack; Ifsm: 30A; Ø7,3x22mm
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 8kV
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: Ø7,3x22mm
Max. forward voltage: 8V
Leakage current: 1µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 8kV; 0.5A; Ammo Pack; Ifsm: 30A; Ø7,3x22mm
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 8kV
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: Ø7,3x22mm
Max. forward voltage: 8V
Leakage current: 1µA
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 36+ | 2.03 EUR |
| 41+ | 1.76 EUR |
| 59+ | 1.23 EUR |
| 61+ | 1.17 EUR |
| P6SMB250A |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 237÷263V; 1.7A; unidirectional; ±5%; SMB
Mounting: SMD
Max. forward impulse current: 1.7A
Breakdown voltage: 237...263V
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: TVS
Tolerance: ±5%
Case: SMB
Max. off-state voltage: 214V
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 237÷263V; 1.7A; unidirectional; ±5%; SMB
Mounting: SMD
Max. forward impulse current: 1.7A
Breakdown voltage: 237...263V
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: TVS
Tolerance: ±5%
Case: SMB
Max. off-state voltage: 214V
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
auf Bestellung 2620 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 370+ | 0.19 EUR |
| 680+ | 0.11 EUR |
| 770+ | 0.093 EUR |
| 885+ | 0.081 EUR |
| 935+ | 0.077 EUR |
| P6SMB250CA |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 237÷263V; 1.7A; bidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Max. forward impulse current: 1.7A
Breakdown voltage: 237...263V
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: TVS
Tolerance: ±5%
Case: SMB
Max. off-state voltage: 214V
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 237÷263V; 1.7A; bidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Max. forward impulse current: 1.7A
Breakdown voltage: 237...263V
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: TVS
Tolerance: ±5%
Case: SMB
Max. off-state voltage: 214V
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
auf Bestellung 4825 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 370+ | 0.19 EUR |
| 410+ | 0.18 EUR |
| 465+ | 0.15 EUR |
| 525+ | 0.14 EUR |
| 550+ | 0.13 EUR |
| ER2M |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 75ns; SMB; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.7V
Max. load current: 10A
Max. forward impulse current: 50A
Leakage current: 5µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 75ns; SMB; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.7V
Max. load current: 10A
Max. forward impulse current: 50A
Leakage current: 5µA
Kind of package: reel; tape
auf Bestellung 2800 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 380+ | 0.19 EUR |
| 630+ | 0.11 EUR |
| 775+ | 0.092 EUR |
| 905+ | 0.079 EUR |
| 940+ | 0.076 EUR |
| 955+ | 0.075 EUR |
| FR1D |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Features of semiconductor devices: fast switching
Max. forward voltage: 1.3V
Max. load current: 6A
Max. forward impulse current: 30A
Reverse recovery time: 150ns
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Features of semiconductor devices: fast switching
Max. forward voltage: 1.3V
Max. load current: 6A
Max. forward impulse current: 30A
Reverse recovery time: 150ns
Kind of package: reel; tape
auf Bestellung 2887 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1875+ | 0.038 EUR |
| DI035N06PQ2-AQ |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 20A; Idm: 110A; 35.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 110A
Power dissipation: 35.7W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 20A; Idm: 110A; 35.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 110A
Power dissipation: 35.7W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DI135N06PQ |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 85A; Idm: 560A; 92.6W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 85A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 85A; Idm: 560A; 92.6W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 85A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DI0A35N06PGK-AQ |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 1.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 1.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| TGL41-16CA |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 16V; 18.6A; bidirectional; ±5%; MELF plastic
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: MELF plastic
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 16V; 18.6A; bidirectional; ±5%; MELF plastic
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: MELF plastic
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
auf Bestellung 1641 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 450+ | 0.16 EUR |
| 870+ | 0.082 EUR |
| 985+ | 0.073 EUR |
| 1055+ | 0.068 EUR |
| TGL41-18CA |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18V; 16.5A; bidirectional; ±5%; MELF plastic
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 16.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: MELF plastic
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18V; 16.5A; bidirectional; ±5%; MELF plastic
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 16.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: MELF plastic
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 180+ | 0.4 EUR |
| TGL41-22CA |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 22V; 13.7A; bidirectional; ±5%; MELF plastic
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: MELF plastic
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 22V; 13.7A; bidirectional; ±5%; MELF plastic
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: MELF plastic
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
auf Bestellung 2180 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 450+ | 0.16 EUR |
| 870+ | 0.082 EUR |
| 985+ | 0.073 EUR |
| 1055+ | 0.068 EUR |
| TGL41-24CA |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 24V; 12.6A; bidirectional; ±5%; MELF plastic
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 12.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: MELF plastic
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 24V; 12.6A; bidirectional; ±5%; MELF plastic
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 12.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: MELF plastic
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
auf Bestellung 4460 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 450+ | 0.16 EUR |
| 870+ | 0.082 EUR |
| 985+ | 0.073 EUR |
| 1055+ | 0.068 EUR |
| TGL41-27CA |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 27V; 11A; bidirectional; ±5%; MELF plastic
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 11A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: MELF plastic
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 27V; 11A; bidirectional; ±5%; MELF plastic
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 11A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: MELF plastic
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
auf Bestellung 3085 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 450+ | 0.16 EUR |
| 870+ | 0.082 EUR |
| 985+ | 0.073 EUR |
| 1055+ | 0.068 EUR |