DI035N06PQ2-AQ DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 20A; Idm: 110A; 35.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 110A
Power dissipation: 35.7W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details DI035N06PQ2-AQ DIOTEC SEMICONDUCTOR
Description: IC, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 35.7W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 782pF @ 30V, Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TDSON-8-4, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DI035N06PQ2-AQ
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DI035N06PQ2-AQ | Hersteller : Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 35.7W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 782pF @ 30V Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| DI035N06PQ2-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 20A; Idm: 110A; 35.7W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Pulsed drain current: 110A Power dissipation: 35.7W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 14.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |