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DI0A35N06PGK-AQ

DI0A35N06PGK-AQ Diotec Semiconductor

di0a35n06pgk.pdf Hersteller: Diotec Semiconductor
Description: MOSFET, DFN1006-3, 60V, 0.35A, 1
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Power Dissipation (Max): 223mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 9273 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
120+0.15 EUR
180+0.10 EUR
500+0.08 EUR
1000+0.07 EUR
2000+0.06 EUR
5000+0.05 EUR
Mindestbestellmenge: 84
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Technische Details DI0A35N06PGK-AQ Diotec Semiconductor

Description: MOSFET, DFN1006-3, 60V, 0.35A, 1, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350mA, Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V, Power Dissipation (Max): 223mW, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: DFN1006-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V, Qualification: AEC-Q101.

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DI0A35N06PGK-AQ DI0A35N06PGK-AQ Hersteller : Diotec Semiconductor di0a35n06pgk.pdf MOSFETs MOSFET, DFN1006-3, 60V, 0.35A, 150C, N, AEC-Q101
auf Bestellung 9372 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+0.31 EUR
13+0.23 EUR
100+0.19 EUR
500+0.15 EUR
1000+0.13 EUR
2500+0.10 EUR
10000+0.07 EUR
Mindestbestellmenge: 10
DI0A35N06PGK-AQ Hersteller : DIOTEC SEMICONDUCTOR di0a35n06pgk.pdf DI0A35N06PGK-AQ SMD N channel transistors
Produkt ist nicht verfügbar
DI0A35N06PGK-AQ DI0A35N06PGK-AQ Hersteller : Diotec Semiconductor di0a35n06pgk.pdf Description: MOSFET, DFN1006-3, 60V, 0.35A, 1
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Power Dissipation (Max): 223mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar