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74LVC2G17FZ4-7 74LVC2G17FZ4-7 Diodes Incorporated 74LVC2G17.pdf Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1410-6
auf Bestellung 64600 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
32+ 0.56 EUR
34+ 0.53 EUR
100+ 0.42 EUR
250+ 0.39 EUR
500+ 0.33 EUR
1000+ 0.26 EUR
2500+ 0.23 EUR
Mindestbestellmenge: 27
S5JC_HF S5JC_HF Diodes Incorporated Description: STANDARD RECOVERY RECTIFIER SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
74LVC1G07FZ4-7 74LVC1G07FZ4-7 Diodes Incorporated 74LVC1G07.pdf Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1410-6
auf Bestellung 135000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.15 EUR
10000+ 0.14 EUR
25000+ 0.13 EUR
50000+ 0.11 EUR
Mindestbestellmenge: 5000
74LVC1G07FZ4-7 74LVC1G07FZ4-7 Diodes Incorporated 74LVC1G07.pdf Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1410-6
auf Bestellung 135000 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
34+ 0.53 EUR
37+ 0.48 EUR
100+ 0.33 EUR
250+ 0.28 EUR
500+ 0.23 EUR
1000+ 0.17 EUR
2500+ 0.16 EUR
Mindestbestellmenge: 25
SMAJ16CAQ-13-F SMAJ16CAQ-13-F Diodes Incorporated SMAJ5.0CAQ-SMAJ200CAQ.pdf Description: TVS DIODE 16VWM 26VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 15.3A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 630000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.18 EUR
10000+ 0.16 EUR
50000+ 0.15 EUR
Mindestbestellmenge: 5000
SMAJ16CAQ-13-F SMAJ16CAQ-13-F Diodes Incorporated SMAJ5.0CAQ-SMAJ200CAQ.pdf Description: TVS DIODE 16VWM 26VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 15.3A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 630000 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
33+ 0.54 EUR
100+ 0.32 EUR
500+ 0.3 EUR
1000+ 0.2 EUR
2000+ 0.19 EUR
Mindestbestellmenge: 26
RDBF32-13 RDBF32-13 Diodes Incorporated Description: BRIDGE RECTIFIER DBF T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBF
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
RDBF32-13 RDBF32-13 Diodes Incorporated Description: BRIDGE RECTIFIER DBF T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBF
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 2484 Stücke:
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18+1.02 EUR
20+ 0.89 EUR
100+ 0.62 EUR
500+ 0.52 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 18
MJD41C-13 MJD41C-13 Diodes Incorporated Description: PWR HI VOLTAGE TRANSISTOR TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
DHVSD3004S1Q-7 Diodes Incorporated Description: HIVOLT SWITCHING DIODE BVR > 100
Packaging: Tape & Reel (TR)
auf Bestellung 360000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.14 EUR
6000+ 0.13 EUR
9000+ 0.11 EUR
75000+ 0.092 EUR
150000+ 0.09 EUR
Mindestbestellmenge: 3000
DHVSD3004S1Q-7 Diodes Incorporated Description: HIVOLT SWITCHING DIODE BVR > 100
Packaging: Cut Tape (CT)
auf Bestellung 362745 Stücke:
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24+0.76 EUR
34+ 0.53 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 24
AP43602S-13 Diodes Incorporated Description: ACDC DECODER SO-8 T&R 4K
Packaging: Tape & Reel (TR)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.62 EUR
8000+ 0.59 EUR
Mindestbestellmenge: 4000
GP43602S-13 Diodes Incorporated Description: ACDC DECODER SO-8 T&R 4K
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
AP43673S10-13 Diodes Incorporated Description: ACDC DECODER SO-10 T&R 3K
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
BC56-16PAWQ-7 BC56-16PAWQ-7 Diodes Incorporated BC56-16PAWQ.pdf Description: PWR MID PERF TRANSISTOR W-DFN202
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SBR12A45SP5-13 SBR12A45SP5-13 Diodes Incorporated SBR12A45SP5.pdf Description: DIODE SBR 45V 12A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 1000pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 12 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
auf Bestellung 15000 Stücke:
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5000+1.01 EUR
10000+ 0.96 EUR
Mindestbestellmenge: 5000
SBR12A45SP5-13 SBR12A45SP5-13 Diodes Incorporated SBR12A45SP5.pdf Description: DIODE SBR 45V 12A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 1000pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 12 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
auf Bestellung 17690 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.55 EUR
10+ 2.09 EUR
100+ 1.63 EUR
500+ 1.38 EUR
1000+ 1.12 EUR
2000+ 1.06 EUR
Mindestbestellmenge: 7
DFLS1100-7-2477 Diodes Incorporated Description: DIODE
Packaging: Bulk
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 36pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 350 nA @ 100 V
Produkt ist nicht verfügbar
APX358SG-13 APX358SG-13 Diodes Incorporated APX321_358.pdf Description: IC OPAMP GP 2 CIRCUIT 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 190µA (x2 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 10 nA
Voltage - Input Offset: 1.7 mV
Supplier Device Package: 8-SOP
Number of Circuits: 2
Current - Output / Channel: 90 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 190000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.53 EUR
5000+ 0.49 EUR
12500+ 0.47 EUR
25000+ 0.46 EUR
Mindestbestellmenge: 2500
APX358SG-13 APX358SG-13 Diodes Incorporated APX321_358.pdf Description: IC OPAMP GP 2 CIRCUIT 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 190µA (x2 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 10 nA
Voltage - Input Offset: 1.7 mV
Supplier Device Package: 8-SOP
Number of Circuits: 2
Current - Output / Channel: 90 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 190000 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.37 EUR
15+ 1.21 EUR
25+ 1.13 EUR
100+ 0.92 EUR
250+ 0.86 EUR
500+ 0.73 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 13
SMAJ58CAQ-13-F SMAJ58CAQ-13-F Diodes Incorporated SMAJ5.0CAQ-SMAJ200CAQ.pdf Description: TVS DIODE 58VWM 93.6VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.18 EUR
10000+ 0.16 EUR
Mindestbestellmenge: 5000
SMAJ58CAQ-13-F SMAJ58CAQ-13-F Diodes Incorporated SMAJ5.0CAQ-SMAJ200CAQ.pdf Description: TVS DIODE 58VWM 93.6VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
34+ 0.53 EUR
100+ 0.32 EUR
500+ 0.29 EUR
1000+ 0.2 EUR
2000+ 0.18 EUR
Mindestbestellmenge: 27
DMG3420UQ-7 DMG3420UQ-7 Diodes Incorporated DMG3420UQ.pdf Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.47A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 434.7 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 168000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.16 EUR
9000+ 0.14 EUR
75000+ 0.12 EUR
Mindestbestellmenge: 3000
DMG3413L-7 DMG3413L-7 Diodes Incorporated DMG3413L.pdf Description: MOSFET P-CH 20V 3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 857 pF @ 10 V
auf Bestellung 723000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.2 EUR
6000+ 0.19 EUR
9000+ 0.17 EUR
75000+ 0.16 EUR
Mindestbestellmenge: 3000
DMG3413L-7 DMG3413L-7 Diodes Incorporated DMG3413L.pdf Description: MOSFET P-CH 20V 3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 857 pF @ 10 V
auf Bestellung 725961 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
31+ 0.57 EUR
100+ 0.34 EUR
500+ 0.32 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 24
DMG3401LSNQ-7 DMG3401LSNQ-7 Diodes Incorporated DMG3401LSNQ.pdf Description: MOSFET P-CH 30V 3A SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-59-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V
auf Bestellung 1341000 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.88 EUR
24+ 0.75 EUR
100+ 0.52 EUR
500+ 0.41 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 20
DMN2024U-7 DMN2024U-7 Diodes Incorporated DMN2024U.pdf Description: MOSFET N-CH 20V 6.8A SOT23 T&R 3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
auf Bestellung 408000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
9000+ 0.15 EUR
75000+ 0.12 EUR
Mindestbestellmenge: 3000
DMN2024U-7 DMN2024U-7 Diodes Incorporated DMN2024U.pdf Description: MOSFET N-CH 20V 6.8A SOT23 T&R 3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
auf Bestellung 408161 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
33+ 0.55 EUR
100+ 0.28 EUR
500+ 0.24 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 23
DMN2028UVT-7 DMN2028UVT-7 Diodes Incorporated DMN2028UVT.pdf Description: MOSFET N-CH 20V 6.2A TSOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 10 V
auf Bestellung 138000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.18 EUR
6000+ 0.17 EUR
9000+ 0.15 EUR
75000+ 0.14 EUR
Mindestbestellmenge: 3000
DMN2028UVT-7 DMN2028UVT-7 Diodes Incorporated DMN2028UVT.pdf Description: MOSFET N-CH 20V 6.2A TSOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 10 V
auf Bestellung 140740 Stücke:
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28+0.65 EUR
35+ 0.51 EUR
100+ 0.31 EUR
500+ 0.29 EUR
1000+ 0.19 EUR
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DMN2024UFDF-7 DMN2024UFDF-7 Diodes Incorporated DMN2024UFDF.pdf Description: MOSFET N-CH 20V 7.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Power Dissipation (Max): 960mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
DMN2024UFDF-7 DMN2024UFDF-7 Diodes Incorporated DMN2024UFDF.pdf Description: MOSFET N-CH 20V 7.1A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Power Dissipation (Max): 960mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
DMN2028UFDH-7 DMN2028UFDH-7 Diodes Incorporated DMN2028UFDH.pdf Description: MOSFET 2N-CH 20V 6.8A POWERDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3030-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.22 EUR
6000+ 0.21 EUR
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Mindestbestellmenge: 3000
DMN2028UFDH-7 DMN2028UFDH-7 Diodes Incorporated DMN2028UFDH.pdf Description: MOSFET 2N-CH 20V 6.8A POWERDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3030-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21118 Stücke:
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500+ 0.3 EUR
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DMN2024UQ-7 DMN2024UQ-7 Diodes Incorporated DMN2024UQ.pdf Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 198000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.19 EUR
6000+ 0.18 EUR
9000+ 0.16 EUR
75000+ 0.15 EUR
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DMN2024UQ-7 DMN2024UQ-7 Diodes Incorporated DMN2024UQ.pdf Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 200010 Stücke:
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26+0.69 EUR
33+ 0.54 EUR
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500+ 0.3 EUR
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DMN2023UCB4-7 DMN2023UCB4-7 Diodes Incorporated DMN2023UCB4.pdf Description: MOSFET 2N-CH X1-WLB1818-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.45W
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 3333pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: X1-WLB1818-4
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMN2023UCB4-7 DMN2023UCB4-7 Diodes Incorporated DMN2023UCB4.pdf Description: MOSFET 2N-CH X1-WLB1818-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.45W
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 3333pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: X1-WLB1818-4
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2995 Stücke:
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18+1 EUR
21+ 0.87 EUR
100+ 0.6 EUR
500+ 0.51 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 18
DMN2025U-7 Diodes Incorporated DMN2025U.pdf Description: MOSFET BVDSS: 8V-24V SOT23 T&R 3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
auf Bestellung 9000 Stücke:
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3000+0.11 EUR
6000+ 0.1 EUR
9000+ 0.089 EUR
Mindestbestellmenge: 3000
DMN2025U-7 Diodes Incorporated DMN2025U.pdf Description: MOSFET BVDSS: 8V-24V SOT23 T&R 3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
42+ 0.42 EUR
100+ 0.21 EUR
500+ 0.17 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 30
DMN2024U-13 DMN2024U-13 Diodes Incorporated DMN2024U.pdf Description: MOSFET N-CH 20V 6.8A SOT23 T&R 1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
auf Bestellung 40000 Stücke:
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10000+0.15 EUR
30000+ 0.14 EUR
Mindestbestellmenge: 10000
DMN2024U-13 DMN2024U-13 Diodes Incorporated DMN2024U.pdf Description: MOSFET N-CH 20V 6.8A SOT23 T&R 1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
auf Bestellung 40000 Stücke:
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23+0.77 EUR
33+ 0.54 EUR
100+ 0.27 EUR
500+ 0.24 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 23
DMN2025UFDF-7 DMN2025UFDF-7 Diodes Incorporated DMN2025UFDF.pdf Description: MOSFET N-CH 20V 6.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 486 pF @ 10 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
DMN2025UFDF-7 DMN2025UFDF-7 Diodes Incorporated DMN2025UFDF.pdf Description: MOSFET N-CH 20V 6.5A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 486 pF @ 10 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
DMN2026UVT-7 DMN2026UVT-7 Diodes Incorporated DMN2026UVT.pdf Description: MOSFET N-CH 20V 6.2A TSOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 10 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.21 EUR
6000+ 0.2 EUR
9000+ 0.18 EUR
30000+ 0.17 EUR
Mindestbestellmenge: 3000
DMN2026UVT-7 DMN2026UVT-7 Diodes Incorporated DMN2026UVT.pdf Description: MOSFET N-CH 20V 6.2A TSOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 10 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
30+ 0.59 EUR
100+ 0.35 EUR
500+ 0.33 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 24
DMN2024UTS-13 DMN2024UTS-13 Diodes Incorporated DMN2024UTS.pdf Description: MOSFET 2N-CH 20V 6.2A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 890mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 15.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 8-TSSOP
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.27 EUR
5000+ 0.26 EUR
12500+ 0.24 EUR
Mindestbestellmenge: 2500
DMN2024UTS-13 DMN2024UTS-13 Diodes Incorporated DMN2024UTS.pdf Description: MOSFET 2N-CH 20V 6.2A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 890mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 15.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 8-TSSOP
auf Bestellung 20000 Stücke:
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22+0.81 EUR
26+ 0.7 EUR
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500+ 0.38 EUR
1000+ 0.31 EUR
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DMN2027UPS-13 DMN2027UPS-13 Diodes Incorporated DMN2027UPS.pdf Description: MOSFET N-CH 20V 10A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 9.4A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 10 V
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.39 EUR
5000+ 0.37 EUR
12500+ 0.34 EUR
Mindestbestellmenge: 2500
DMN2027UPS-13 DMN2027UPS-13 Diodes Incorporated DMN2027UPS.pdf Description: MOSFET N-CH 20V 10A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 9.4A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 10 V
auf Bestellung 17500 Stücke:
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18+1.02 EUR
20+ 0.88 EUR
100+ 0.61 EUR
500+ 0.51 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 18
DMN2025U-13 Diodes Incorporated DMN2025U.pdf Description: MOSFET BVDSS: 8V-24V SOT23 T&R 1
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.089 EUR
Mindestbestellmenge: 10000
DMN2028UVT-13 DMN2028UVT-13 Diodes Incorporated DMN2028UVT.pdf Description: MOSFET N-CH 20V 6.2A TSOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 10 V
Produkt ist nicht verfügbar
DMN2024UFDF-13 DMN2024UFDF-13 Diodes Incorporated DMN2024UFDF.pdf Description: MOSFET N-CH 20V 7.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Power Dissipation (Max): 960mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
Produkt ist nicht verfügbar
DMN2024UQ-13 DMN2024UQ-13 Diodes Incorporated DMN2024UQ.pdf Description: MOSFET BVDSS: 8V~24V SOT23 T&R 1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMN2028UFDF-13 DMN2028UFDF-13 Diodes Incorporated DMN2028UFDF.pdf Description: MOSFET N-CH 20V 7.9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 907 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.18 EUR
Mindestbestellmenge: 10000
DMN2024UVTQ-13 DMN2024UVTQ-13 Diodes Incorporated DMN2024UVTQ.pdf Description: MOSFET 2N-CH 20V 7A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMN2024UVT-13 DMN2024UVT-13 Diodes Incorporated DMN2024UVT.pdf Description: MOSFET 2N-CH 20V 7A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TSOT-23-6
Produkt ist nicht verfügbar
DMN2024UVTQ-7 DMN2024UVTQ-7 Diodes Incorporated DMN2024UVTQ.pdf Description: MOSFET 2N-CH 20V 7A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.22 EUR
6000+ 0.21 EUR
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DMN2024UVT-7 DMN2024UVT-7 Diodes Incorporated DMN2024UVT.pdf Description: MOSFET 2N-CH 20V 7A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TSOT-23-6
Produkt ist nicht verfügbar
DMN2024LCA4-7 Diodes Incorporated Description: MOSFET BVDSS: 8V~24V X4-DSN1313-
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.23 EUR
6000+ 0.22 EUR
15000+ 0.2 EUR
Mindestbestellmenge: 3000
74LVC2G17FZ4-7 74LVC2G17.pdf
74LVC2G17FZ4-7
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1410-6
auf Bestellung 64600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
32+ 0.56 EUR
34+ 0.53 EUR
100+ 0.42 EUR
250+ 0.39 EUR
500+ 0.33 EUR
1000+ 0.26 EUR
2500+ 0.23 EUR
Mindestbestellmenge: 27
S5JC_HF
S5JC_HF
Hersteller: Diodes Incorporated
Description: STANDARD RECOVERY RECTIFIER SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
74LVC1G07FZ4-7 74LVC1G07.pdf
74LVC1G07FZ4-7
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1410-6
auf Bestellung 135000 Stücke:
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Anzahl Preis ohne MwSt
5000+0.15 EUR
10000+ 0.14 EUR
25000+ 0.13 EUR
50000+ 0.11 EUR
Mindestbestellmenge: 5000
74LVC1G07FZ4-7 74LVC1G07.pdf
74LVC1G07FZ4-7
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1410-6
auf Bestellung 135000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
34+ 0.53 EUR
37+ 0.48 EUR
100+ 0.33 EUR
250+ 0.28 EUR
500+ 0.23 EUR
1000+ 0.17 EUR
2500+ 0.16 EUR
Mindestbestellmenge: 25
SMAJ16CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ16CAQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 16VWM 26VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 15.3A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 630000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.18 EUR
10000+ 0.16 EUR
50000+ 0.15 EUR
Mindestbestellmenge: 5000
SMAJ16CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ16CAQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 16VWM 26VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 15.3A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 630000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
33+ 0.54 EUR
100+ 0.32 EUR
500+ 0.3 EUR
1000+ 0.2 EUR
2000+ 0.19 EUR
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RDBF32-13
RDBF32-13
Hersteller: Diodes Incorporated
Description: BRIDGE RECTIFIER DBF T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBF
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
RDBF32-13
RDBF32-13
Hersteller: Diodes Incorporated
Description: BRIDGE RECTIFIER DBF T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBF
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 2484 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1.02 EUR
20+ 0.89 EUR
100+ 0.62 EUR
500+ 0.52 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 18
MJD41C-13
MJD41C-13
Hersteller: Diodes Incorporated
Description: PWR HI VOLTAGE TRANSISTOR TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
DHVSD3004S1Q-7
Hersteller: Diodes Incorporated
Description: HIVOLT SWITCHING DIODE BVR > 100
Packaging: Tape & Reel (TR)
auf Bestellung 360000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.14 EUR
6000+ 0.13 EUR
9000+ 0.11 EUR
75000+ 0.092 EUR
150000+ 0.09 EUR
Mindestbestellmenge: 3000
DHVSD3004S1Q-7
Hersteller: Diodes Incorporated
Description: HIVOLT SWITCHING DIODE BVR > 100
Packaging: Cut Tape (CT)
auf Bestellung 362745 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
34+ 0.53 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 24
AP43602S-13
Hersteller: Diodes Incorporated
Description: ACDC DECODER SO-8 T&R 4K
Packaging: Tape & Reel (TR)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.62 EUR
8000+ 0.59 EUR
Mindestbestellmenge: 4000
GP43602S-13
Hersteller: Diodes Incorporated
Description: ACDC DECODER SO-8 T&R 4K
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
AP43673S10-13
Hersteller: Diodes Incorporated
Description: ACDC DECODER SO-10 T&R 3K
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
BC56-16PAWQ-7 BC56-16PAWQ.pdf
BC56-16PAWQ-7
Hersteller: Diodes Incorporated
Description: PWR MID PERF TRANSISTOR W-DFN202
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SBR12A45SP5-13 SBR12A45SP5.pdf
SBR12A45SP5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 12A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 1000pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 12 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.01 EUR
10000+ 0.96 EUR
Mindestbestellmenge: 5000
SBR12A45SP5-13 SBR12A45SP5.pdf
SBR12A45SP5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 12A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 1000pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 12 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
auf Bestellung 17690 Stücke:
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7+2.55 EUR
10+ 2.09 EUR
100+ 1.63 EUR
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1000+ 1.12 EUR
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DFLS1100-7-2477
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 36pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 350 nA @ 100 V
Produkt ist nicht verfügbar
APX358SG-13 APX321_358.pdf
APX358SG-13
Hersteller: Diodes Incorporated
Description: IC OPAMP GP 2 CIRCUIT 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 190µA (x2 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 10 nA
Voltage - Input Offset: 1.7 mV
Supplier Device Package: 8-SOP
Number of Circuits: 2
Current - Output / Channel: 90 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 190000 Stücke:
Lieferzeit 10-14 Tag (e)
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2500+0.53 EUR
5000+ 0.49 EUR
12500+ 0.47 EUR
25000+ 0.46 EUR
Mindestbestellmenge: 2500
APX358SG-13 APX321_358.pdf
APX358SG-13
Hersteller: Diodes Incorporated
Description: IC OPAMP GP 2 CIRCUIT 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 190µA (x2 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 10 nA
Voltage - Input Offset: 1.7 mV
Supplier Device Package: 8-SOP
Number of Circuits: 2
Current - Output / Channel: 90 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 190000 Stücke:
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Anzahl Preis ohne MwSt
13+1.37 EUR
15+ 1.21 EUR
25+ 1.13 EUR
100+ 0.92 EUR
250+ 0.86 EUR
500+ 0.73 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 13
SMAJ58CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ58CAQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 58VWM 93.6VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.18 EUR
10000+ 0.16 EUR
Mindestbestellmenge: 5000
SMAJ58CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ58CAQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 58VWM 93.6VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
34+ 0.53 EUR
100+ 0.32 EUR
500+ 0.29 EUR
1000+ 0.2 EUR
2000+ 0.18 EUR
Mindestbestellmenge: 27
DMG3420UQ-7 DMG3420UQ.pdf
DMG3420UQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.47A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 434.7 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 168000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.16 EUR
9000+ 0.14 EUR
75000+ 0.12 EUR
Mindestbestellmenge: 3000
DMG3413L-7 DMG3413L.pdf
DMG3413L-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 857 pF @ 10 V
auf Bestellung 723000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.2 EUR
6000+ 0.19 EUR
9000+ 0.17 EUR
75000+ 0.16 EUR
Mindestbestellmenge: 3000
DMG3413L-7 DMG3413L.pdf
DMG3413L-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 857 pF @ 10 V
auf Bestellung 725961 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
31+ 0.57 EUR
100+ 0.34 EUR
500+ 0.32 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 24
DMG3401LSNQ-7 DMG3401LSNQ.pdf
DMG3401LSNQ-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 3A SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-59-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V
auf Bestellung 1341000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.88 EUR
24+ 0.75 EUR
100+ 0.52 EUR
500+ 0.41 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 20
DMN2024U-7 DMN2024U.pdf
DMN2024U-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 6.8A SOT23 T&R 3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
auf Bestellung 408000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.17 EUR
9000+ 0.15 EUR
75000+ 0.12 EUR
Mindestbestellmenge: 3000
DMN2024U-7 DMN2024U.pdf
DMN2024U-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 6.8A SOT23 T&R 3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
auf Bestellung 408161 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
33+ 0.55 EUR
100+ 0.28 EUR
500+ 0.24 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 23
DMN2028UVT-7 DMN2028UVT.pdf
DMN2028UVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 6.2A TSOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 10 V
auf Bestellung 138000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.18 EUR
6000+ 0.17 EUR
9000+ 0.15 EUR
75000+ 0.14 EUR
Mindestbestellmenge: 3000
DMN2028UVT-7 DMN2028UVT.pdf
DMN2028UVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 6.2A TSOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 10 V
auf Bestellung 140740 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.65 EUR
35+ 0.51 EUR
100+ 0.31 EUR
500+ 0.29 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 28
DMN2024UFDF-7 DMN2024UFDF.pdf
DMN2024UFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 7.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Power Dissipation (Max): 960mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
DMN2024UFDF-7 DMN2024UFDF.pdf
DMN2024UFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 7.1A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Power Dissipation (Max): 960mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
DMN2028UFDH-7 DMN2028UFDH.pdf
DMN2028UFDH-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.8A POWERDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3030-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.22 EUR
6000+ 0.21 EUR
9000+ 0.19 EUR
Mindestbestellmenge: 3000
DMN2028UFDH-7 DMN2028UFDH.pdf
DMN2028UFDH-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.8A POWERDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3030-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21118 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.65 EUR
32+ 0.56 EUR
100+ 0.39 EUR
500+ 0.3 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 28
DMN2024UQ-7 DMN2024UQ.pdf
DMN2024UQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 198000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.19 EUR
6000+ 0.18 EUR
9000+ 0.16 EUR
75000+ 0.15 EUR
Mindestbestellmenge: 3000
DMN2024UQ-7 DMN2024UQ.pdf
DMN2024UQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 200010 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
33+ 0.54 EUR
100+ 0.33 EUR
500+ 0.3 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 26
DMN2023UCB4-7 DMN2023UCB4.pdf
DMN2023UCB4-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH X1-WLB1818-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.45W
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 3333pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: X1-WLB1818-4
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMN2023UCB4-7 DMN2023UCB4.pdf
DMN2023UCB4-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH X1-WLB1818-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.45W
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 3333pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: X1-WLB1818-4
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1 EUR
21+ 0.87 EUR
100+ 0.6 EUR
500+ 0.51 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 18
DMN2025U-7 DMN2025U.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V-24V SOT23 T&R 3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.11 EUR
6000+ 0.1 EUR
9000+ 0.089 EUR
Mindestbestellmenge: 3000
DMN2025U-7 DMN2025U.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V-24V SOT23 T&R 3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
42+ 0.42 EUR
100+ 0.21 EUR
500+ 0.17 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 30
DMN2024U-13 DMN2024U.pdf
DMN2024U-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 6.8A SOT23 T&R 1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.15 EUR
30000+ 0.14 EUR
Mindestbestellmenge: 10000
DMN2024U-13 DMN2024U.pdf
DMN2024U-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 6.8A SOT23 T&R 1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
33+ 0.54 EUR
100+ 0.27 EUR
500+ 0.24 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 23
DMN2025UFDF-7 DMN2025UFDF.pdf
DMN2025UFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 6.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 486 pF @ 10 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
DMN2025UFDF-7 DMN2025UFDF.pdf
DMN2025UFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 6.5A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 486 pF @ 10 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
DMN2026UVT-7 DMN2026UVT.pdf
DMN2026UVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 6.2A TSOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 10 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.21 EUR
6000+ 0.2 EUR
9000+ 0.18 EUR
30000+ 0.17 EUR
Mindestbestellmenge: 3000
DMN2026UVT-7 DMN2026UVT.pdf
DMN2026UVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 6.2A TSOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 10 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
30+ 0.59 EUR
100+ 0.35 EUR
500+ 0.33 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 24
DMN2024UTS-13 DMN2024UTS.pdf
DMN2024UTS-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.2A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 890mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 15.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 8-TSSOP
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.27 EUR
5000+ 0.26 EUR
12500+ 0.24 EUR
Mindestbestellmenge: 2500
DMN2024UTS-13 DMN2024UTS.pdf
DMN2024UTS-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.2A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 890mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 15.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 8-TSSOP
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.81 EUR
26+ 0.7 EUR
100+ 0.48 EUR
500+ 0.38 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 22
DMN2027UPS-13 DMN2027UPS.pdf
DMN2027UPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 10A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 9.4A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 10 V
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.39 EUR
5000+ 0.37 EUR
12500+ 0.34 EUR
Mindestbestellmenge: 2500
DMN2027UPS-13 DMN2027UPS.pdf
DMN2027UPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 10A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 9.4A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 10 V
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1.02 EUR
20+ 0.88 EUR
100+ 0.61 EUR
500+ 0.51 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 18
DMN2025U-13 DMN2025U.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V-24V SOT23 T&R 1
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.089 EUR
Mindestbestellmenge: 10000
DMN2028UVT-13 DMN2028UVT.pdf
DMN2028UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 6.2A TSOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 10 V
Produkt ist nicht verfügbar
DMN2024UFDF-13 DMN2024UFDF.pdf
DMN2024UFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 7.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Power Dissipation (Max): 960mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
Produkt ist nicht verfügbar
DMN2024UQ-13 DMN2024UQ.pdf
DMN2024UQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMN2028UFDF-13 DMN2028UFDF.pdf
DMN2028UFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 7.9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 907 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.18 EUR
Mindestbestellmenge: 10000
DMN2024UVTQ-13 DMN2024UVTQ.pdf
DMN2024UVTQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 7A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMN2024UVT-13 DMN2024UVT.pdf
DMN2024UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 7A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TSOT-23-6
Produkt ist nicht verfügbar
DMN2024UVTQ-7 DMN2024UVTQ.pdf
DMN2024UVTQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 7A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.22 EUR
6000+ 0.21 EUR
Mindestbestellmenge: 3000
DMN2024UVT-7 DMN2024UVT.pdf
DMN2024UVT-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 7A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TSOT-23-6
Produkt ist nicht verfügbar
DMN2024LCA4-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X4-DSN1313-
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.23 EUR
6000+ 0.22 EUR
15000+ 0.2 EUR
Mindestbestellmenge: 3000
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