Produkte > BASIC SEMICONDUCTOR > Alle Produkte des Herstellers BASIC SEMICONDUCTOR (232) > Seite 1 nach 4
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B1D03120E | BASiC SEMICONDUCTOR | B1D03120E SMD Schottky diodes |
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B1D04065KF | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 13W; TO220FP-2; tube Mounting: THT Case: TO220FP-2 Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.7V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 30A Leakage current: 10µA Power dissipation: 13W |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D05120E | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 1.78V Case: TO252-2 Kind of package: reel; tape Leakage current: 10µA Max. forward impulse current: 60A Power dissipation: 53W |
Produkt ist nicht verfügbar |
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B1D05120E | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 1.78V Case: TO252-2 Kind of package: reel; tape Leakage current: 10µA Max. forward impulse current: 60A Power dissipation: 53W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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B1D06065F | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263-2; reel,tape Mounting: SMD Case: TO263-2 Power dissipation: 38W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.73V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 45A Leakage current: 20µA |
Produkt ist nicht verfügbar |
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B1D06065F | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263-2; reel,tape Mounting: SMD Case: TO263-2 Power dissipation: 38W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.73V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 45A Leakage current: 20µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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B1D06065K | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 42W; TO220-2; tube Mounting: THT Case: TO220-2 Power dissipation: 42W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.73V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 45A Leakage current: 20µA |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D06065KF | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 23W; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Power dissipation: 23W Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 45A Max. forward voltage: 1.73V Leakage current: 20µA |
Produkt ist nicht verfügbar |
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B1D06065KS | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 30W; TO220ISO; tube Mounting: THT Case: TO220ISO Power dissipation: 30W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.75V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 45A Leakage current: 20µA |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D06065KS | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 30W; TO220ISO; tube Mounting: THT Case: TO220ISO Power dissipation: 30W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.75V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 45A Leakage current: 20µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 38 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D08065F | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263-2; reel,tape Kind of package: reel; tape Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 60A Leakage current: 10µA Power dissipation: 48W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Case: TO263-2 Max. off-state voltage: 650V Max. forward voltage: 1.75V |
Produkt ist nicht verfügbar |
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B1D08065F | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263-2; reel,tape Kind of package: reel; tape Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 60A Leakage current: 10µA Power dissipation: 48W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Case: TO263-2 Max. off-state voltage: 650V Max. forward voltage: 1.75V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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B1D08065K | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 56W; TO220-2; tube Kind of package: tube Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 60A Leakage current: 10µA Power dissipation: 56W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO220-2 Max. off-state voltage: 650V Max. forward voltage: 1.75V |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D08065K | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 56W; TO220-2; tube Kind of package: tube Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 60A Leakage current: 10µA Power dissipation: 56W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO220-2 Max. off-state voltage: 650V Max. forward voltage: 1.75V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D08065KF | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 20W; TO220FP-2; tube Type of diode: Schottky rectifying Case: TO220FP-2 Mounting: THT Kind of package: tube Power dissipation: 20W Max. forward impulse current: 64A Leakage current: 10µA Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.69V Load current: 8A Semiconductor structure: single diode |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D08065KS | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 32W; TO220ISO; tube Kind of package: tube Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 64A Leakage current: 10µA Power dissipation: 32W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO220ISO Max. off-state voltage: 650V Max. forward voltage: 1.73V |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D08065KS | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 32W; TO220ISO; tube Kind of package: tube Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 64A Leakage current: 10µA Power dissipation: 32W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO220ISO Max. off-state voltage: 650V Max. forward voltage: 1.73V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 38 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D10065E | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO252-2 Max. forward voltage: 1.75V Leakage current: 20µA Max. forward impulse current: 75A Kind of package: reel; tape Power dissipation: 50W |
Produkt ist nicht verfügbar |
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B1D10065E | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO252-2 Max. forward voltage: 1.75V Leakage current: 20µA Max. forward impulse current: 75A Kind of package: reel; tape Power dissipation: 50W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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B1D10065F | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO263-2 Max. forward voltage: 1.75V Leakage current: 20µA Max. forward impulse current: 75A Kind of package: reel; tape Power dissipation: 58W |
Produkt ist nicht verfügbar |
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B1D10065F | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO263-2 Max. forward voltage: 1.75V Leakage current: 20µA Max. forward impulse current: 75A Kind of package: reel; tape Power dissipation: 58W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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B1D10065H | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.75V Leakage current: 20µA Max. forward impulse current: 75A Kind of package: tube Power dissipation: 68W |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D10065H | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.75V Leakage current: 20µA Max. forward impulse current: 75A Kind of package: tube Power dissipation: 68W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D10065KS | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.75V Leakage current: 20µA Max. forward impulse current: 75A Kind of package: tube Power dissipation: 38W |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D10065KS | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.75V Leakage current: 20µA Max. forward impulse current: 75A Kind of package: tube Power dissipation: 38W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 48 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D10120E | BASiC SEMICONDUCTOR | B1D10120E SMD Schottky diodes |
Produkt ist nicht verfügbar |
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B1D15065K | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA Mounting: THT Case: TO220-2 Power dissipation: 84W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.75V Load current: 15A Semiconductor structure: single diode Max. forward impulse current: 112A Leakage current: 10µA |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D15065K | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA Mounting: THT Case: TO220-2 Power dissipation: 84W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.75V Load current: 15A Semiconductor structure: single diode Max. forward impulse current: 112A Leakage current: 10µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D16065HC | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 73W; TO247-3; tube Mounting: THT Max. forward voltage: 1.75V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 60A Leakage current: 10µA Power dissipation: 73W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Max. off-state voltage: 650V Max. load current: 16A |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D16065HC | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 73W; TO247-3; tube Mounting: THT Max. forward voltage: 1.75V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 60A Leakage current: 10µA Power dissipation: 73W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Max. off-state voltage: 650V Max. load current: 16A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 21 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D20065HC | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Application: automotive industry |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D20065HC | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 29 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D30065TF | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; 31W; TO3PF; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A x2 Max. load current: 30A Power dissipation: 31W Semiconductor structure: common cathode; double Case: TO3PF Kind of package: tube Max. forward impulse current: 110A Max. forward voltage: 1.62V Leakage current: 30µA |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D30065TF | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; 31W; TO3PF; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A x2 Max. load current: 30A Power dissipation: 31W Semiconductor structure: common cathode; double Case: TO3PF Kind of package: tube Max. forward impulse current: 110A Max. forward voltage: 1.62V Leakage current: 30µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D40065H | BASiC SEMICONDUCTOR | B1D40065H THT Schottky diodes |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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B1M080120HC | BASiC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 27A Pulsed drain current: 80A Power dissipation: 241W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 80mΩ Mounting: THT Gate charge: 149nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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B1M080120HC | BASiC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 27A Pulsed drain current: 80A Power dissipation: 241W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 80mΩ Mounting: THT Gate charge: 149nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 44 Stücke: Lieferzeit 7-14 Tag (e) |
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B1M080120HK | BASiC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 149nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 80A Mounting: THT Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 27A On-state resistance: 80mΩ Type of transistor: N-MOSFET Power dissipation: 241W |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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B1M080120HK | BASiC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 149nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 80A Mounting: THT Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 27A On-state resistance: 80mΩ Type of transistor: N-MOSFET Power dissipation: 241W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D02120E1 | BASiC SEMICONDUCTOR | B2D02120E1 SMD Schottky diodes |
auf Bestellung 3751 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D02120K1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; Ir: 20uA Technology: SiC Power dissipation: 35W Case: TO220-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Max. forward voltage: 1.9V Load current: 2A Max. forward impulse current: 20A Leakage current: 20µA |
auf Bestellung 114 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D02120K1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; Ir: 20uA Technology: SiC Power dissipation: 35W Case: TO220-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Max. forward voltage: 1.9V Load current: 2A Max. forward impulse current: 20A Leakage current: 20µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 114 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D04065D | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; reel,tape Mounting: SMD Case: DFN5x6 Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.7V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 32A Leakage current: 10µA Power dissipation: 26W |
Produkt ist nicht verfügbar |
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B2D04065D | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; reel,tape Mounting: SMD Case: DFN5x6 Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.7V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 32A Leakage current: 10µA Power dissipation: 26W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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B2D04065D1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; reel,tape Mounting: SMD Case: DFN5x6 Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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B2D04065D1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; reel,tape Mounting: SMD Case: DFN5x6 Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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B2D04065E1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252-2; reel,tape Mounting: SMD Case: TO252-2 Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode |
auf Bestellung 2467 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D04065E1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252-2; reel,tape Mounting: SMD Case: TO252-2 Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2467 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D04065K1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 39W; TO220-2; tube Mounting: THT Case: TO220-2 Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.6V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 34A Leakage current: 20µA Power dissipation: 39W |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D04065K1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 39W; TO220-2; tube Mounting: THT Case: TO220-2 Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.6V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 34A Leakage current: 20µA Power dissipation: 39W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 42 Stücke: Lieferzeit 7-14 Tag (e) |
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B2D04065KF1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube Mounting: THT Case: TO220FP-2 Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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B2D04065KF1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube Mounting: THT Case: TO220FP-2 Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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B2D04065V | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape Mounting: SMD Case: SMB flat Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.65V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 32A Leakage current: 5µA Power dissipation: 10W |
Produkt ist nicht verfügbar |
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B2D04065V | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape Mounting: SMD Case: SMB flat Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.65V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 32A Leakage current: 5µA Power dissipation: 10W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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B2D04065V1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: SMB flat Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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B2D04065V1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: SMB flat Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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B2D05120E1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: TO252-2 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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B2D05120E1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: TO252-2 Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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B2D05120K1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA Technology: SiC Power dissipation: 64W Case: TO220-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Max. forward voltage: 1.75V Load current: 5A Max. forward impulse current: 55A Leakage current: 30µA |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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B2D05120K1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA Technology: SiC Power dissipation: 64W Case: TO220-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Max. forward voltage: 1.75V Load current: 5A Max. forward impulse current: 55A Leakage current: 30µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D04065KF |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 13W; TO220FP-2; tube
Mounting: THT
Case: TO220FP-2
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.7V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 10µA
Power dissipation: 13W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 13W; TO220FP-2; tube
Mounting: THT
Case: TO220FP-2
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.7V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 10µA
Power dissipation: 13W
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 35.75 EUR |
B1D05120E |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.78V
Case: TO252-2
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 60A
Power dissipation: 53W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.78V
Case: TO252-2
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 60A
Power dissipation: 53W
Produkt ist nicht verfügbar
B1D05120E |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.78V
Case: TO252-2
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 60A
Power dissipation: 53W
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.78V
Case: TO252-2
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 60A
Power dissipation: 53W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B1D06065F |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263-2; reel,tape
Mounting: SMD
Case: TO263-2
Power dissipation: 38W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.73V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 20µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263-2; reel,tape
Mounting: SMD
Case: TO263-2
Power dissipation: 38W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.73V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 20µA
Produkt ist nicht verfügbar
B1D06065F |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263-2; reel,tape
Mounting: SMD
Case: TO263-2
Power dissipation: 38W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.73V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 20µA
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263-2; reel,tape
Mounting: SMD
Case: TO263-2
Power dissipation: 38W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.73V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 20µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B1D06065K |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 42W; TO220-2; tube
Mounting: THT
Case: TO220-2
Power dissipation: 42W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.73V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 20µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 42W; TO220-2; tube
Mounting: THT
Case: TO220-2
Power dissipation: 42W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.73V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 20µA
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 14.3 EUR |
B1D06065KF |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 23W; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Power dissipation: 23W
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 45A
Max. forward voltage: 1.73V
Leakage current: 20µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 23W; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Power dissipation: 23W
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 45A
Max. forward voltage: 1.73V
Leakage current: 20µA
Produkt ist nicht verfügbar
B1D06065KS |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 30W; TO220ISO; tube
Mounting: THT
Case: TO220ISO
Power dissipation: 30W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 20µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 30W; TO220ISO; tube
Mounting: THT
Case: TO220ISO
Power dissipation: 30W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 20µA
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
36+ | 2.03 EUR |
38+ | 1.89 EUR |
B1D06065KS |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 30W; TO220ISO; tube
Mounting: THT
Case: TO220ISO
Power dissipation: 30W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 20µA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 30W; TO220ISO; tube
Mounting: THT
Case: TO220ISO
Power dissipation: 30W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 20µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
36+ | 2.03 EUR |
38+ | 1.89 EUR |
B1D08065F |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263-2; reel,tape
Kind of package: reel; tape
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 60A
Leakage current: 10µA
Power dissipation: 48W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO263-2
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263-2; reel,tape
Kind of package: reel; tape
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 60A
Leakage current: 10µA
Power dissipation: 48W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO263-2
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
Produkt ist nicht verfügbar
B1D08065F |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263-2; reel,tape
Kind of package: reel; tape
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 60A
Leakage current: 10µA
Power dissipation: 48W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO263-2
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263-2; reel,tape
Kind of package: reel; tape
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 60A
Leakage current: 10µA
Power dissipation: 48W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO263-2
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B1D08065K |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 56W; TO220-2; tube
Kind of package: tube
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 60A
Leakage current: 10µA
Power dissipation: 56W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220-2
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 56W; TO220-2; tube
Kind of package: tube
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 60A
Leakage current: 10µA
Power dissipation: 56W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220-2
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 4.76 EUR |
B1D08065K |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 56W; TO220-2; tube
Kind of package: tube
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 60A
Leakage current: 10µA
Power dissipation: 56W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220-2
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 56W; TO220-2; tube
Kind of package: tube
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 60A
Leakage current: 10µA
Power dissipation: 56W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220-2
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 4.76 EUR |
29+ | 2.46 EUR |
100+ | 1.47 EUR |
B1D08065KF |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 20W; TO220FP-2; tube
Type of diode: Schottky rectifying
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Power dissipation: 20W
Max. forward impulse current: 64A
Leakage current: 10µA
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.69V
Load current: 8A
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 20W; TO220FP-2; tube
Type of diode: Schottky rectifying
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Power dissipation: 20W
Max. forward impulse current: 64A
Leakage current: 10µA
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.69V
Load current: 8A
Semiconductor structure: single diode
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 23.84 EUR |
B1D08065KS |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 32W; TO220ISO; tube
Kind of package: tube
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 64A
Leakage current: 10µA
Power dissipation: 32W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220ISO
Max. off-state voltage: 650V
Max. forward voltage: 1.73V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 32W; TO220ISO; tube
Kind of package: tube
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 64A
Leakage current: 10µA
Power dissipation: 32W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220ISO
Max. off-state voltage: 650V
Max. forward voltage: 1.73V
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 2.3 EUR |
35+ | 2.07 EUR |
38+ | 1.89 EUR |
B1D08065KS |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 32W; TO220ISO; tube
Kind of package: tube
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 64A
Leakage current: 10µA
Power dissipation: 32W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220ISO
Max. off-state voltage: 650V
Max. forward voltage: 1.73V
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 32W; TO220ISO; tube
Kind of package: tube
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 64A
Leakage current: 10µA
Power dissipation: 32W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220ISO
Max. off-state voltage: 650V
Max. forward voltage: 1.73V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 2.3 EUR |
35+ | 2.07 EUR |
38+ | 1.89 EUR |
B1D10065E |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.75V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: reel; tape
Power dissipation: 50W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.75V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: reel; tape
Power dissipation: 50W
Produkt ist nicht verfügbar
B1D10065E |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.75V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: reel; tape
Power dissipation: 50W
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.75V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: reel; tape
Power dissipation: 50W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B1D10065F |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.75V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: reel; tape
Power dissipation: 58W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.75V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: reel; tape
Power dissipation: 58W
Produkt ist nicht verfügbar
B1D10065F |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.75V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: reel; tape
Power dissipation: 58W
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.75V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: reel; tape
Power dissipation: 58W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B1D10065H |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.75V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: tube
Power dissipation: 68W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.75V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: tube
Power dissipation: 68W
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 14.3 EUR |
B1D10065H |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.75V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: tube
Power dissipation: 68W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.75V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: tube
Power dissipation: 68W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 14.3 EUR |
9+ | 7.95 EUR |
23+ | 3.1 EUR |
150+ | 1.89 EUR |
600+ | 1.87 EUR |
B1D10065KS |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.75V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: tube
Power dissipation: 38W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.75V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: tube
Power dissipation: 38W
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 2.9 EUR |
28+ | 2.62 EUR |
35+ | 2.06 EUR |
37+ | 1.94 EUR |
B1D10065KS |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.75V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: tube
Power dissipation: 38W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.75V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: tube
Power dissipation: 38W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 2.9 EUR |
28+ | 2.62 EUR |
35+ | 2.06 EUR |
37+ | 1.94 EUR |
B1D15065K |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Mounting: THT
Case: TO220-2
Power dissipation: 84W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 112A
Leakage current: 10µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Mounting: THT
Case: TO220-2
Power dissipation: 84W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 112A
Leakage current: 10µA
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.89 EUR |
20+ | 3.58 EUR |
B1D15065K |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Mounting: THT
Case: TO220-2
Power dissipation: 84W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 112A
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Mounting: THT
Case: TO220-2
Power dissipation: 84W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 112A
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.89 EUR |
20+ | 3.58 EUR |
100+ | 2.8 EUR |
B1D16065HC |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 73W; TO247-3; tube
Mounting: THT
Max. forward voltage: 1.75V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 60A
Leakage current: 10µA
Power dissipation: 73W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 16A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 73W; TO247-3; tube
Mounting: THT
Max. forward voltage: 1.75V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 60A
Leakage current: 10µA
Power dissipation: 73W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 16A
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 4.96 EUR |
21+ | 3.4 EUR |
B1D16065HC |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 73W; TO247-3; tube
Mounting: THT
Max. forward voltage: 1.75V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 60A
Leakage current: 10µA
Power dissipation: 73W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 16A
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 73W; TO247-3; tube
Mounting: THT
Max. forward voltage: 1.75V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 60A
Leakage current: 10µA
Power dissipation: 73W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 16A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 4.96 EUR |
21+ | 3.4 EUR |
600+ | 3.19 EUR |
B1D20065HC |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 6.56 EUR |
15+ | 4.78 EUR |
16+ | 4.5 EUR |
B1D20065HC |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 6.56 EUR |
15+ | 4.78 EUR |
16+ | 4.5 EUR |
150+ | 4.38 EUR |
600+ | 4.33 EUR |
B1D30065TF |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; 31W; TO3PF; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Max. load current: 30A
Power dissipation: 31W
Semiconductor structure: common cathode; double
Case: TO3PF
Kind of package: tube
Max. forward impulse current: 110A
Max. forward voltage: 1.62V
Leakage current: 30µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; 31W; TO3PF; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Max. load current: 30A
Power dissipation: 31W
Semiconductor structure: common cathode; double
Case: TO3PF
Kind of package: tube
Max. forward impulse current: 110A
Max. forward voltage: 1.62V
Leakage current: 30µA
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 8.45 EUR |
12+ | 6.16 EUR |
13+ | 5.82 EUR |
B1D30065TF |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; 31W; TO3PF; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Max. load current: 30A
Power dissipation: 31W
Semiconductor structure: common cathode; double
Case: TO3PF
Kind of package: tube
Max. forward impulse current: 110A
Max. forward voltage: 1.62V
Leakage current: 30µA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; 31W; TO3PF; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Max. load current: 30A
Power dissipation: 31W
Semiconductor structure: common cathode; double
Case: TO3PF
Kind of package: tube
Max. forward impulse current: 110A
Max. forward voltage: 1.62V
Leakage current: 30µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 8.45 EUR |
12+ | 6.16 EUR |
13+ | 5.82 EUR |
150+ | 5.62 EUR |
600+ | 5.59 EUR |
B1D40065H |
Hersteller: BASiC SEMICONDUCTOR
B1D40065H THT Schottky diodes
B1D40065H THT Schottky diodes
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 11.8 EUR |
9+ | 8.15 EUR |
10+ | 7.69 EUR |
600+ | 7.59 EUR |
B1M080120HC |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 27A
Pulsed drain current: 80A
Power dissipation: 241W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 27A
Pulsed drain current: 80A
Power dissipation: 241W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 18.13 EUR |
B1M080120HC |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 27A
Pulsed drain current: 80A
Power dissipation: 241W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 27A
Pulsed drain current: 80A
Power dissipation: 241W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 18.13 EUR |
600+ | 17.45 EUR |
B1M080120HK |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 149nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 80A
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 27A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 241W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 149nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 80A
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 27A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 241W
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 19.29 EUR |
B1M080120HK |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 149nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 80A
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 27A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 241W
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 149nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 80A
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 27A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 241W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 19.29 EUR |
150+ | 18.53 EUR |
B2D02120E1 |
Hersteller: BASiC SEMICONDUCTOR
B2D02120E1 SMD Schottky diodes
B2D02120E1 SMD Schottky diodes
auf Bestellung 3751 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
53+ | 1.37 EUR |
81+ | 0.89 EUR |
85+ | 0.84 EUR |
B2D02120K1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; Ir: 20uA
Technology: SiC
Power dissipation: 35W
Case: TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Max. forward voltage: 1.9V
Load current: 2A
Max. forward impulse current: 20A
Leakage current: 20µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; Ir: 20uA
Technology: SiC
Power dissipation: 35W
Case: TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Max. forward voltage: 1.9V
Load current: 2A
Max. forward impulse current: 20A
Leakage current: 20µA
auf Bestellung 114 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
66+ | 1.09 EUR |
74+ | 0.98 EUR |
90+ | 0.8 EUR |
95+ | 0.76 EUR |
B2D02120K1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; Ir: 20uA
Technology: SiC
Power dissipation: 35W
Case: TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Max. forward voltage: 1.9V
Load current: 2A
Max. forward impulse current: 20A
Leakage current: 20µA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; Ir: 20uA
Technology: SiC
Power dissipation: 35W
Case: TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Max. forward voltage: 1.9V
Load current: 2A
Max. forward impulse current: 20A
Leakage current: 20µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 114 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
66+ | 1.09 EUR |
74+ | 0.98 EUR |
90+ | 0.8 EUR |
95+ | 0.76 EUR |
500+ | 0.73 EUR |
B2D04065D |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; reel,tape
Mounting: SMD
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.7V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 32A
Leakage current: 10µA
Power dissipation: 26W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; reel,tape
Mounting: SMD
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.7V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 32A
Leakage current: 10µA
Power dissipation: 26W
Produkt ist nicht verfügbar
B2D04065D |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; reel,tape
Mounting: SMD
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.7V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 32A
Leakage current: 10µA
Power dissipation: 26W
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; reel,tape
Mounting: SMD
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.7V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 32A
Leakage current: 10µA
Power dissipation: 26W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B2D04065D1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; reel,tape
Mounting: SMD
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; reel,tape
Mounting: SMD
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
B2D04065D1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; reel,tape
Mounting: SMD
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; reel,tape
Mounting: SMD
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B2D04065E1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252-2; reel,tape
Mounting: SMD
Case: TO252-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252-2; reel,tape
Mounting: SMD
Case: TO252-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
auf Bestellung 2467 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
54+ | 1.33 EUR |
61+ | 1.19 EUR |
79+ | 0.92 EUR |
84+ | 0.86 EUR |
B2D04065E1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252-2; reel,tape
Mounting: SMD
Case: TO252-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252-2; reel,tape
Mounting: SMD
Case: TO252-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2467 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
54+ | 1.33 EUR |
61+ | 1.19 EUR |
79+ | 0.92 EUR |
84+ | 0.86 EUR |
B2D04065K1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 39W; TO220-2; tube
Mounting: THT
Case: TO220-2
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.6V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 34A
Leakage current: 20µA
Power dissipation: 39W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 39W; TO220-2; tube
Mounting: THT
Case: TO220-2
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.6V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 34A
Leakage current: 20µA
Power dissipation: 39W
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
42+ | 1.7 EUR |
B2D04065K1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 39W; TO220-2; tube
Mounting: THT
Case: TO220-2
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.6V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 34A
Leakage current: 20µA
Power dissipation: 39W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 39W; TO220-2; tube
Mounting: THT
Case: TO220-2
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.6V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 34A
Leakage current: 20µA
Power dissipation: 39W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
42+ | 1.7 EUR |
50+ | 1.43 EUR |
B2D04065KF1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Mounting: THT
Case: TO220FP-2
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Mounting: THT
Case: TO220FP-2
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
B2D04065KF1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Mounting: THT
Case: TO220FP-2
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Mounting: THT
Case: TO220FP-2
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B2D04065V |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape
Mounting: SMD
Case: SMB flat
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.65V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 32A
Leakage current: 5µA
Power dissipation: 10W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape
Mounting: SMD
Case: SMB flat
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.65V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 32A
Leakage current: 5µA
Power dissipation: 10W
Produkt ist nicht verfügbar
B2D04065V |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape
Mounting: SMD
Case: SMB flat
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.65V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 32A
Leakage current: 5µA
Power dissipation: 10W
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape
Mounting: SMD
Case: SMB flat
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.65V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 32A
Leakage current: 5µA
Power dissipation: 10W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B2D04065V1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: SMB flat
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: SMB flat
Kind of package: reel; tape
Produkt ist nicht verfügbar
B2D04065V1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: SMB flat
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: SMB flat
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B2D05120E1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO252-2
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO252-2
Kind of package: reel; tape
Produkt ist nicht verfügbar
B2D05120E1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO252-2
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO252-2
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
B2D05120K1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Technology: SiC
Power dissipation: 64W
Case: TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Max. forward voltage: 1.75V
Load current: 5A
Max. forward impulse current: 55A
Leakage current: 30µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Technology: SiC
Power dissipation: 64W
Case: TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Max. forward voltage: 1.75V
Load current: 5A
Max. forward impulse current: 55A
Leakage current: 30µA
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 8.94 EUR |
B2D05120K1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Technology: SiC
Power dissipation: 64W
Case: TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Max. forward voltage: 1.75V
Load current: 5A
Max. forward impulse current: 55A
Leakage current: 30µA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Technology: SiC
Power dissipation: 64W
Case: TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Max. forward voltage: 1.75V
Load current: 5A
Max. forward impulse current: 55A
Leakage current: 30µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 8.94 EUR |
14+ | 5.11 EUR |
38+ | 1.89 EUR |
500+ | 1.12 EUR |