B1D08065F BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263-2; reel,tape
Kind of package: reel; tape
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 60A
Leakage current: 10µA
Power dissipation: 48W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO263-2
Max. off-state voltage: 650V
Max. forward voltage: 1.75V
Anzahl je Verpackung: 1 Stücke
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Technische Details B1D08065F BASiC SEMICONDUCTOR
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263-2; reel,tape, Kind of package: reel; tape, Load current: 8A, Semiconductor structure: single diode, Max. forward impulse current: 60A, Leakage current: 10µA, Power dissipation: 48W, Type of diode: Schottky rectifying, Technology: SiC, Mounting: SMD, Case: TO263-2, Max. off-state voltage: 650V, Max. forward voltage: 1.75V, Anzahl je Verpackung: 1 Stücke.
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B1D08065F | Hersteller : BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263-2; reel,tape Kind of package: reel; tape Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 60A Leakage current: 10µA Power dissipation: 48W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Case: TO263-2 Max. off-state voltage: 650V Max. forward voltage: 1.75V |
Produkt ist nicht verfügbar |