B1D10065F BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.75V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: reel; tape
Power dissipation: 58W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details B1D10065F BASiC SEMICONDUCTOR
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263-2; reel,tape, Type of diode: Schottky rectifying, Technology: SiC, Mounting: SMD, Max. off-state voltage: 650V, Load current: 10A, Semiconductor structure: single diode, Case: TO263-2, Max. forward voltage: 1.75V, Leakage current: 20µA, Max. forward impulse current: 75A, Kind of package: reel; tape, Power dissipation: 58W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B1D10065F
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
|
|
B1D10065F | Hersteller : BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO263-2 Max. forward voltage: 1.75V Leakage current: 20µA Max. forward impulse current: 75A Kind of package: reel; tape Power dissipation: 58W |
Produkt ist nicht verfügbar |