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B1D10065F BASiC SEMICONDUCTOR
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Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.75V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: reel; tape
Power dissipation: 58W
Anzahl je Verpackung: 1 Stücke
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Technische Details B1D10065F BASiC SEMICONDUCTOR
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263-2; reel,tape, Type of diode: Schottky rectifying, Technology: SiC, Mounting: SMD, Max. off-state voltage: 650V, Load current: 10A, Semiconductor structure: single diode, Case: TO263-2, Max. forward voltage: 1.75V, Leakage current: 20µA, Max. forward impulse current: 75A, Kind of package: reel; tape, Power dissipation: 58W, Anzahl je Verpackung: 1 Stücke.
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B1D10065F | Hersteller : BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO263-2 Max. forward voltage: 1.75V Leakage current: 20µA Max. forward impulse current: 75A Kind of package: reel; tape Power dissipation: 58W |
Produkt ist nicht verfügbar |