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YJL03G10A YJL03G10A YANGJIE TECHNOLOGY YJL03G10A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 121A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Pulsed drain current: 121A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
YJL03N04A YJL03N04A Yangjie Technology Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.053 EUR
15000+ 0.049 EUR
30000+ 0.046 EUR
60000+ 0.044 EUR
120000+ 0.039 EUR
300000+ 0.037 EUR
Mindestbestellmenge: 3000
YJL03N06A YJL03N06A YANGJIE TECHNOLOGY YJL03N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 2.4A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.4A
Pulsed drain current: 12A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL03N06A YJL03N06A YANGJIE TECHNOLOGY YJL03N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 2.4A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.4A
Pulsed drain current: 12A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
YJL03N06AQ YJL03N06AQ Yangjie Technology Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
30000+ 0.1 EUR
60000+ 0.093 EUR
120000+ 0.084 EUR
300000+ 0.077 EUR
Mindestbestellmenge: 3000
YJL03N06B YJL03N06B Yangjie Technology YJL03N06B.pdf Description: SOT-23 N 60V 3A Transistors FET
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.059 EUR
15000+ 0.056 EUR
30000+ 0.053 EUR
60000+ 0.049 EUR
120000+ 0.044 EUR
300000+ 0.041 EUR
Mindestbestellmenge: 3000
YJL05N04AQ YJL05N04AQ Yangjie Technology Description: Transistors - FETs, MOSFETs - Si
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.085 EUR
15000+ 0.081 EUR
30000+ 0.076 EUR
60000+ 0.071 EUR
120000+ 0.065 EUR
300000+ 0.059 EUR
Mindestbestellmenge: 3000
YJL05N06AL YJL05N06AL Yangjie Technology Description: SOT-23 N 60V 5A Transistors FET
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
30000+ 0.12 EUR
60000+ 0.11 EUR
120000+ 0.1 EUR
300000+ 0.092 EUR
Mindestbestellmenge: 3000
YJL2300A YJL2300A YANGJIE TECHNOLOGY YJL2300A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.6A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL2300A YJL2300A YANGJIE TECHNOLOGY YJL2300A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.6A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
YJL2301C YJL2301C YANGJIE TECHNOLOGY YJL2301C.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -2.7A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Pulsed drain current: -14A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
1030+0.07 EUR
1610+ 0.045 EUR
2140+ 0.033 EUR
2270+ 0.032 EUR
Mindestbestellmenge: 1030
YJL2301C YJL2301C YANGJIE TECHNOLOGY YJL2301C.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -2.7A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Pulsed drain current: -14A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
1030+0.07 EUR
1610+ 0.045 EUR
2140+ 0.033 EUR
2270+ 0.032 EUR
Mindestbestellmenge: 1030
YJL2301CQ YJL2301CQ Yangjie Technology Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
15000+ 0.097 EUR
30000+ 0.092 EUR
60000+ 0.086 EUR
120000+ 0.077 EUR
300000+ 0.072 EUR
Mindestbestellmenge: 3000
YJL2301D YJL2301D Yangjie Technology Description: SOT-23 P -19V -3.8A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 900000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.058 EUR
15000+ 0.056 EUR
30000+ 0.053 EUR
60000+ 0.049 EUR
120000+ 0.044 EUR
300000+ 0.04 EUR
600000+ 0.033 EUR
Mindestbestellmenge: 3000
YJL2301D YJL2301D YANGJIE TECHNOLOGY YJL2301D.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -3A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -3A
Pulsed drain current: -15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL2301D YJL2301D YANGJIE TECHNOLOGY YJL2301D.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -3A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -3A
Pulsed drain current: -15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 20 Stücke
Produkt ist nicht verfügbar
YJL2301F YJL2301F YANGJIE TECHNOLOGY YJL2301F.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -1.6A; 0.7W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL2301F YJL2301F YANGJIE TECHNOLOGY YJL2301F.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -1.6A; 0.7W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 20 Stücke
Produkt ist nicht verfügbar
YJL2301G YJL2301G YANGJIE TECHNOLOGY YJL2301G.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -1.6A; 0.7W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL2301G YJL2301G Yangjie Technology Description: SOT-23 P -19V -2A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.042 EUR
15000+ 0.04 EUR
30000+ 0.037 EUR
60000+ 0.035 EUR
120000+ 0.032 EUR
300000+ 0.03 EUR
Mindestbestellmenge: 3000
YJL2301G YJL2301G YANGJIE TECHNOLOGY YJL2301G.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -1.6A; 0.7W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
YJL2301N YJL2301N Yangjie Technology Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.039 EUR
15000+ 0.037 EUR
30000+ 0.033 EUR
60000+ 0.032 EUR
120000+ 0.028 EUR
300000+ 0.026 EUR
Mindestbestellmenge: 3000
YJL2302A YJL2302A Yangjie Technology YJL2302A.pdf Description: SOT-23 N 20V 4.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.048 EUR
15000+ 0.044 EUR
30000+ 0.042 EUR
60000+ 0.039 EUR
120000+ 0.035 EUR
300000+ 0.033 EUR
Mindestbestellmenge: 3000
YJL2302A YJL2302A YANGJIE TECHNOLOGY YJL2302A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.5A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL2302A YJL2302A YANGJIE TECHNOLOGY YJL2302A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.5A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
YJL2304A YJL2304A YANGJIE TECHNOLOGY YJL2304A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 2.9A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.9A
Pulsed drain current: 15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
YJL2304A YJL2304A YANGJIE TECHNOLOGY YJL2304A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 2.9A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.9A
Pulsed drain current: 15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.58 EUR
100+ 0.72 EUR
500+ 0.14 EUR
580+ 0.12 EUR
1590+ 0.044 EUR
Mindestbestellmenge: 20
YJL2305A YJL2305A YANGJIE TECHNOLOGY YJL2305A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -4.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -4.5A
Pulsed drain current: -23A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL2305A YJL2305A YANGJIE TECHNOLOGY YJL2305A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -4.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -4.5A
Pulsed drain current: -23A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
YJL2305B YANGJIE TECHNOLOGY YJL2305B.pdf YJL2305B-YAN SMD P channel transistors
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)
39+1.83 EUR
420+ 0.17 EUR
1140+ 0.063 EUR
12000+ 0.041 EUR
Mindestbestellmenge: 39
YJL2312A YJL2312A YANGJIE TECHNOLOGY YJL2312A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 5.4A; 1.2W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 4.6nC
Technology: TRENCH POWER LV
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 27A
Case: SOT23
Drain-source voltage: 20V
Drain current: 5.4A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
YJL2312A YJL2312A Yangjie Technology Description: SOT-23 N 20V 6.8A Transistors F
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.062 EUR
15000+ 0.058 EUR
30000+ 0.055 EUR
60000+ 0.051 EUR
120000+ 0.046 EUR
300000+ 0.044 EUR
Mindestbestellmenge: 3000
YJL2312A YJL2312A YANGJIE TECHNOLOGY YJL2312A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 5.4A; 1.2W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 4.6nC
Technology: TRENCH POWER LV
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 27A
Case: SOT23
Drain-source voltage: 20V
Drain current: 5.4A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
YJL2312AL YJL2312AL Yangjie Technology Description: SOT-23 N 20V 7.6A Transistors F
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.079 EUR
15000+ 0.074 EUR
30000+ 0.07 EUR
60000+ 0.065 EUR
120000+ 0.058 EUR
300000+ 0.055 EUR
Mindestbestellmenge: 3000
YJL2312AQ YJL2312AQ Yangjie Technology Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
30000+ 0.1 EUR
60000+ 0.093 EUR
120000+ 0.084 EUR
300000+ 0.077 EUR
Mindestbestellmenge: 3000
YJL3400A YJL3400A YANGJIE TECHNOLOGY YJL3400A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 23A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.58 EUR
Mindestbestellmenge: 20
YJL3400A YJL3400A YANGJIE TECHNOLOGY YJL3400A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 23A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 20 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.58 EUR
100+ 0.72 EUR
400+ 0.17 EUR
1100+ 0.064 EUR
Mindestbestellmenge: 20
YJL3401A YJL3401A YANGJIE TECHNOLOGY YJL3401A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2760 Stücke:
Lieferzeit 14-21 Tag (e)
1080+0.066 EUR
1200+ 0.06 EUR
1560+ 0.046 EUR
1660+ 0.043 EUR
Mindestbestellmenge: 1080
YJL3401A YJL3401A YANGJIE TECHNOLOGY YJL3401A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 20 Stücke
auf Bestellung 2760 Stücke:
Lieferzeit 7-14 Tag (e)
1080+0.066 EUR
1200+ 0.06 EUR
1560+ 0.046 EUR
1660+ 0.043 EUR
Mindestbestellmenge: 1080
YJL3401AL YJL3401AL Yangjie Technology Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.088 EUR
15000+ 0.083 EUR
30000+ 0.079 EUR
60000+ 0.074 EUR
120000+ 0.067 EUR
300000+ 0.062 EUR
Mindestbestellmenge: 3000
YJL3401AL YJL3401AL YANGJIE TECHNOLOGY YJL3401AL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.76 EUR
Mindestbestellmenge: 15
YJL3401AL YJL3401AL YANGJIE TECHNOLOGY YJL3401AL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.76 EUR
100+ 0.72 EUR
375+ 0.19 EUR
1025+ 0.07 EUR
3000+ 0.042 EUR
Mindestbestellmenge: 15
YJL3401AQ YJL3401AQ Yangjie Technology Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
30000+ 0.1 EUR
60000+ 0.093 EUR
120000+ 0.084 EUR
300000+ 0.077 EUR
Mindestbestellmenge: 3000
YJL3404A YJL3404A YANGJIE TECHNOLOGY YJL3404A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)
160+0.44 EUR
Mindestbestellmenge: 160
YJL3404A YJL3404A YANGJIE TECHNOLOGY YJL3404A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
auf Bestellung 160 Stücke:
Lieferzeit 7-14 Tag (e)
160+0.44 EUR
430+ 0.17 EUR
1170+ 0.061 EUR
Mindestbestellmenge: 160
YJL3404AQ YJL3404AQ Yangjie Technology Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
15000+ 0.11 EUR
30000+ 0.1 EUR
60000+ 0.097 EUR
120000+ 0.088 EUR
300000+ 0.081 EUR
Mindestbestellmenge: 3000
YJL3407A YJL3407A YANGJIE TECHNOLOGY YJL3407A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.63 EUR
Mindestbestellmenge: 44
YJL3407A YJL3407A YANGJIE TECHNOLOGY YJL3407A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
44+1.63 EUR
100+ 0.72 EUR
250+ 0.29 EUR
448+ 0.16 EUR
1230+ 0.059 EUR
Mindestbestellmenge: 44
YJL3407AL YJL3407AL YANGJIE TECHNOLOGY YJL3407AL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL3407AL YJL3407AL YANGJIE TECHNOLOGY YJL3407AL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
YJM04N10A YJM04N10A Yangjie Technology Description: SOT-223 N 100V 4A Transistors F
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.17 EUR
Mindestbestellmenge: 2500
YJM04N10A YJM04N10A YANGJIE TECHNOLOGY YJM04N10A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 3.2A; 2.5W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.2A
Pulsed drain current: 16A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJM04N10A YJM04N10A YANGJIE TECHNOLOGY YJM04N10A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 3.2A; 2.5W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.2A
Pulsed drain current: 16A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
YJM05N06A YJM05N06A Yangjie Technology Description: SOT-223 N 60V 5A Transistors FE
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.2 EUR
12500+ 0.19 EUR
25000+ 0.18 EUR
50000+ 0.17 EUR
100000+ 0.15 EUR
250000+ 0.14 EUR
Mindestbestellmenge: 2500
YJP25N15B YJP25N15B YANGJIE TECHNOLOGY Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 90A; 52W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 52W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 11.6nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJP25N15B YJP25N15B YANGJIE TECHNOLOGY Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 90A; 52W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 52W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 11.6nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
YJQ13N03A YJQ13N03A Yangjie Technology Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.15 EUR
15000+ 0.14 EUR
30000+ 0.13 EUR
60000+ 0.12 EUR
120000+ 0.11 EUR
300000+ 0.1 EUR
Mindestbestellmenge: 3000
YJQ15GP10A YJQ15GP10A YANGJIE TECHNOLOGY YJQ15GP10A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A
Type of transistor: P-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -9.5A
Pulsed drain current: -45A
Power dissipation: 17.2W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 3.98nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJQ15GP10A YJQ15GP10A YANGJIE TECHNOLOGY YJQ15GP10A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A
Type of transistor: P-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -9.5A
Pulsed drain current: -45A
Power dissipation: 17.2W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 3.98nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
YJQ2012A YJQ2012A Yangjie Technology Description: DFN2020-6L N 20V 12A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
15000+ 0.11 EUR
30000+ 0.1 EUR
60000+ 0.099 EUR
120000+ 0.088 EUR
300000+ 0.081 EUR
Mindestbestellmenge: 3000
YJL03G10A YJL03G10A.pdf
YJL03G10A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 121A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Pulsed drain current: 121A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
YJL03N04A
YJL03N04A
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.053 EUR
15000+ 0.049 EUR
30000+ 0.046 EUR
60000+ 0.044 EUR
120000+ 0.039 EUR
300000+ 0.037 EUR
Mindestbestellmenge: 3000
YJL03N06A YJL03N06A.pdf
YJL03N06A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 2.4A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.4A
Pulsed drain current: 12A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL03N06A YJL03N06A.pdf
YJL03N06A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 2.4A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.4A
Pulsed drain current: 12A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
YJL03N06AQ
YJL03N06AQ
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.11 EUR
30000+ 0.1 EUR
60000+ 0.093 EUR
120000+ 0.084 EUR
300000+ 0.077 EUR
Mindestbestellmenge: 3000
YJL03N06B YJL03N06B.pdf
YJL03N06B
Hersteller: Yangjie Technology
Description: SOT-23 N 60V 3A Transistors FET
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.059 EUR
15000+ 0.056 EUR
30000+ 0.053 EUR
60000+ 0.049 EUR
120000+ 0.044 EUR
300000+ 0.041 EUR
Mindestbestellmenge: 3000
YJL05N04AQ
YJL05N04AQ
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.085 EUR
15000+ 0.081 EUR
30000+ 0.076 EUR
60000+ 0.071 EUR
120000+ 0.065 EUR
300000+ 0.059 EUR
Mindestbestellmenge: 3000
YJL05N06AL
YJL05N06AL
Hersteller: Yangjie Technology
Description: SOT-23 N 60V 5A Transistors FET
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.13 EUR
30000+ 0.12 EUR
60000+ 0.11 EUR
120000+ 0.1 EUR
300000+ 0.092 EUR
Mindestbestellmenge: 3000
YJL2300A YJL2300A.pdf
YJL2300A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.6A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL2300A YJL2300A.pdf
YJL2300A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.6A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
YJL2301C YJL2301C.pdf
YJL2301C
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -2.7A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Pulsed drain current: -14A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1030+0.07 EUR
1610+ 0.045 EUR
2140+ 0.033 EUR
2270+ 0.032 EUR
Mindestbestellmenge: 1030
YJL2301C YJL2301C.pdf
YJL2301C
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -2.7A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Pulsed drain current: -14A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1030+0.07 EUR
1610+ 0.045 EUR
2140+ 0.033 EUR
2270+ 0.032 EUR
Mindestbestellmenge: 1030
YJL2301CQ
YJL2301CQ
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.1 EUR
15000+ 0.097 EUR
30000+ 0.092 EUR
60000+ 0.086 EUR
120000+ 0.077 EUR
300000+ 0.072 EUR
Mindestbestellmenge: 3000
YJL2301D
YJL2301D
Hersteller: Yangjie Technology
Description: SOT-23 P -19V -3.8A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 900000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.058 EUR
15000+ 0.056 EUR
30000+ 0.053 EUR
60000+ 0.049 EUR
120000+ 0.044 EUR
300000+ 0.04 EUR
600000+ 0.033 EUR
Mindestbestellmenge: 3000
YJL2301D YJL2301D.pdf
YJL2301D
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -3A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -3A
Pulsed drain current: -15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL2301D YJL2301D.pdf
YJL2301D
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -3A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -3A
Pulsed drain current: -15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 20 Stücke
Produkt ist nicht verfügbar
YJL2301F YJL2301F.pdf
YJL2301F
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -1.6A; 0.7W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL2301F YJL2301F.pdf
YJL2301F
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -1.6A; 0.7W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 20 Stücke
Produkt ist nicht verfügbar
YJL2301G YJL2301G.pdf
YJL2301G
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -1.6A; 0.7W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL2301G
YJL2301G
Hersteller: Yangjie Technology
Description: SOT-23 P -19V -2A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.042 EUR
15000+ 0.04 EUR
30000+ 0.037 EUR
60000+ 0.035 EUR
120000+ 0.032 EUR
300000+ 0.03 EUR
Mindestbestellmenge: 3000
YJL2301G YJL2301G.pdf
YJL2301G
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -1.6A; 0.7W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
YJL2301N
YJL2301N
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.039 EUR
15000+ 0.037 EUR
30000+ 0.033 EUR
60000+ 0.032 EUR
120000+ 0.028 EUR
300000+ 0.026 EUR
Mindestbestellmenge: 3000
YJL2302A YJL2302A.pdf
YJL2302A
Hersteller: Yangjie Technology
Description: SOT-23 N 20V 4.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.048 EUR
15000+ 0.044 EUR
30000+ 0.042 EUR
60000+ 0.039 EUR
120000+ 0.035 EUR
300000+ 0.033 EUR
Mindestbestellmenge: 3000
YJL2302A YJL2302A.pdf
YJL2302A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.5A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL2302A YJL2302A.pdf
YJL2302A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.5A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
YJL2304A YJL2304A.pdf
YJL2304A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 2.9A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.9A
Pulsed drain current: 15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
YJL2304A YJL2304A.pdf
YJL2304A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 2.9A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.9A
Pulsed drain current: 15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+3.58 EUR
100+ 0.72 EUR
500+ 0.14 EUR
580+ 0.12 EUR
1590+ 0.044 EUR
Mindestbestellmenge: 20
YJL2305A YJL2305A.pdf
YJL2305A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -4.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -4.5A
Pulsed drain current: -23A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL2305A YJL2305A.pdf
YJL2305A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -4.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -4.5A
Pulsed drain current: -23A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
YJL2305B YJL2305B.pdf
Hersteller: YANGJIE TECHNOLOGY
YJL2305B-YAN SMD P channel transistors
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
39+1.83 EUR
420+ 0.17 EUR
1140+ 0.063 EUR
12000+ 0.041 EUR
Mindestbestellmenge: 39
YJL2312A YJL2312A.pdf
YJL2312A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 5.4A; 1.2W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 4.6nC
Technology: TRENCH POWER LV
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 27A
Case: SOT23
Drain-source voltage: 20V
Drain current: 5.4A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
YJL2312A
YJL2312A
Hersteller: Yangjie Technology
Description: SOT-23 N 20V 6.8A Transistors F
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.062 EUR
15000+ 0.058 EUR
30000+ 0.055 EUR
60000+ 0.051 EUR
120000+ 0.046 EUR
300000+ 0.044 EUR
Mindestbestellmenge: 3000
YJL2312A YJL2312A.pdf
YJL2312A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 5.4A; 1.2W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 4.6nC
Technology: TRENCH POWER LV
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 27A
Case: SOT23
Drain-source voltage: 20V
Drain current: 5.4A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
YJL2312AL
YJL2312AL
Hersteller: Yangjie Technology
Description: SOT-23 N 20V 7.6A Transistors F
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.079 EUR
15000+ 0.074 EUR
30000+ 0.07 EUR
60000+ 0.065 EUR
120000+ 0.058 EUR
300000+ 0.055 EUR
Mindestbestellmenge: 3000
YJL2312AQ
YJL2312AQ
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.11 EUR
30000+ 0.1 EUR
60000+ 0.093 EUR
120000+ 0.084 EUR
300000+ 0.077 EUR
Mindestbestellmenge: 3000
YJL3400A YJL3400A.pdf
YJL3400A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 23A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
20+3.58 EUR
Mindestbestellmenge: 20
YJL3400A YJL3400A.pdf
YJL3400A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 23A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 20 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+3.58 EUR
100+ 0.72 EUR
400+ 0.17 EUR
1100+ 0.064 EUR
Mindestbestellmenge: 20
YJL3401A YJL3401A.pdf
YJL3401A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2760 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1080+0.066 EUR
1200+ 0.06 EUR
1560+ 0.046 EUR
1660+ 0.043 EUR
Mindestbestellmenge: 1080
YJL3401A YJL3401A.pdf
YJL3401A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 20 Stücke
auf Bestellung 2760 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1080+0.066 EUR
1200+ 0.06 EUR
1560+ 0.046 EUR
1660+ 0.043 EUR
Mindestbestellmenge: 1080
YJL3401AL
YJL3401AL
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.088 EUR
15000+ 0.083 EUR
30000+ 0.079 EUR
60000+ 0.074 EUR
120000+ 0.067 EUR
300000+ 0.062 EUR
Mindestbestellmenge: 3000
YJL3401AL YJL3401AL.pdf
YJL3401AL
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
15+4.76 EUR
Mindestbestellmenge: 15
YJL3401AL YJL3401AL.pdf
YJL3401AL
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
15+4.76 EUR
100+ 0.72 EUR
375+ 0.19 EUR
1025+ 0.07 EUR
3000+ 0.042 EUR
Mindestbestellmenge: 15
YJL3401AQ
YJL3401AQ
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.11 EUR
30000+ 0.1 EUR
60000+ 0.093 EUR
120000+ 0.084 EUR
300000+ 0.077 EUR
Mindestbestellmenge: 3000
YJL3404A YJL3404A.pdf
YJL3404A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
160+0.44 EUR
Mindestbestellmenge: 160
YJL3404A YJL3404A.pdf
YJL3404A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
auf Bestellung 160 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
160+0.44 EUR
430+ 0.17 EUR
1170+ 0.061 EUR
Mindestbestellmenge: 160
YJL3404AQ
YJL3404AQ
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.12 EUR
15000+ 0.11 EUR
30000+ 0.1 EUR
60000+ 0.097 EUR
120000+ 0.088 EUR
300000+ 0.081 EUR
Mindestbestellmenge: 3000
YJL3407A YJL3407A.pdf
YJL3407A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
44+1.63 EUR
Mindestbestellmenge: 44
YJL3407A YJL3407A.pdf
YJL3407A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
44+1.63 EUR
100+ 0.72 EUR
250+ 0.29 EUR
448+ 0.16 EUR
1230+ 0.059 EUR
Mindestbestellmenge: 44
YJL3407AL YJL3407AL.pdf
YJL3407AL
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL3407AL YJL3407AL.pdf
YJL3407AL
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
YJM04N10A
YJM04N10A
Hersteller: Yangjie Technology
Description: SOT-223 N 100V 4A Transistors F
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.17 EUR
Mindestbestellmenge: 2500
YJM04N10A YJM04N10A.pdf
YJM04N10A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 3.2A; 2.5W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.2A
Pulsed drain current: 16A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJM04N10A YJM04N10A.pdf
YJM04N10A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 3.2A; 2.5W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.2A
Pulsed drain current: 16A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
YJM05N06A
YJM05N06A
Hersteller: Yangjie Technology
Description: SOT-223 N 60V 5A Transistors FE
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.2 EUR
12500+ 0.19 EUR
25000+ 0.18 EUR
50000+ 0.17 EUR
100000+ 0.15 EUR
250000+ 0.14 EUR
Mindestbestellmenge: 2500
YJP25N15B
YJP25N15B
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 90A; 52W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 52W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 11.6nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJP25N15B
YJP25N15B
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 90A; 52W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 52W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 11.6nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
YJQ13N03A
YJQ13N03A
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.15 EUR
15000+ 0.14 EUR
30000+ 0.13 EUR
60000+ 0.12 EUR
120000+ 0.11 EUR
300000+ 0.1 EUR
Mindestbestellmenge: 3000
YJQ15GP10A YJQ15GP10A.pdf
YJQ15GP10A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A
Type of transistor: P-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -9.5A
Pulsed drain current: -45A
Power dissipation: 17.2W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 3.98nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJQ15GP10A YJQ15GP10A.pdf
YJQ15GP10A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A
Type of transistor: P-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -9.5A
Pulsed drain current: -45A
Power dissipation: 17.2W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 3.98nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
YJQ2012A
YJQ2012A
Hersteller: Yangjie Technology
Description: DFN2020-6L N 20V 12A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.12 EUR
15000+ 0.11 EUR
30000+ 0.1 EUR
60000+ 0.099 EUR
120000+ 0.088 EUR
300000+ 0.081 EUR
Mindestbestellmenge: 3000
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