Produkte > YANGJIE TECHNOLOGY > Alle Produkte des Herstellers YANGJIE TECHNOLOGY (4554) > Seite 48 nach 76
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
MG200HF12MRC2 | YANGJIE TECHNOLOGY |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Mechanical mounting: screw Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Application: Inverter; motors Electrical mounting: FASTON connectors; screw Type of module: IGBT Topology: IGBT half-bridge Case: C2 62mm |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
MG200HF12MRC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A NTC Thermistor: No Supplier Device Package: C2 Part Status: Active Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1150 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V |
auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
MG200HF12MRC2 | YANGJIE TECHNOLOGY |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Mechanical mounting: screw Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Application: Inverter; motors Electrical mounting: FASTON connectors; screw Type of module: IGBT Topology: IGBT half-bridge Case: C2 62mm Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
MG200HF12TLC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A NTC Thermistor: No IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1250 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 12.8 nF @ 25 V |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
MG25P12E1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
MG25P12E1A | Yangjie Technology |
Description: Transistors - IGBTs - Modules E1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 155 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
MG25P12P3 | Yangjie Technology |
Description: Transistors - IGBTs - Modules P3 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 175 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.9 nF @ 25 V |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
MG25P12P3 | YANGJIE TECHNOLOGY |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3 Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: IGBT Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge Case: P3 Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 50A Application: Inverter; motors |
Produkt ist nicht verfügbar |
||||||||||||||
MG25P12P3 | YANGJIE TECHNOLOGY |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3 Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: IGBT Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge Case: P3 Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 50A Application: Inverter; motors Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
MG300HF12MRC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper NTC Thermistor: No Supplier Device Package: C2 Part Status: Active Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
MG300HF12TLC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 300A NTC Thermistor: No IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1700 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 18.4 nF @ 25 V |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
MG35P12E1A | Yangjie Technology |
Description: Transistors - IGBTs - Modules E1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 166 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
MG35P12P3 | YANGJIE TECHNOLOGY |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3 Application: Inverter; motors Mechanical mounting: screw Pulsed collector current: 70A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: P3 Gate-emitter voltage: ±20V Collector current: 35A Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
MG35P12P3 | Yangjie Technology |
Description: Transistors - IGBTs - Modules P3 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 215 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
MG35P12P3 | YANGJIE TECHNOLOGY |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3 Application: Inverter; motors Mechanical mounting: screw Pulsed collector current: 70A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: P3 Gate-emitter voltage: ±20V Collector current: 35A Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
MG400HF12MRC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 400A NTC Thermistor: No Supplier Device Package: C2 Part Status: Active Current - Collector (Ic) (Max): 580 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1925 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 28 nF @ 25 V |
auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
MG40HF12LEC1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A NTC Thermistor: No IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 312 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
MG40P12E1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 166 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
MG50HF12LEC1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 50A NTC Thermistor: No IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 400 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
MG50HF12TLC1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A NTC Thermistor: No IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 485 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
MG50P12E1A | Yangjie Technology |
Description: Transistors - IGBTs - Modules E1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 166 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
MG50P12E2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 227 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
MG50P12E2A | Yangjie Technology |
Description: Transistors - IGBTs - Modules E2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 227 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
MG50U12GJ | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; GJ-U; screw Collector current: 50A Case: GJ-U Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Application: Inverter; motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |
||||||||||||||
MG50U12GJ | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; GJ-U; screw Collector current: 50A Case: GJ-U Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Application: Inverter; motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
MG50UZ12GJ | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; GJ-UZ; screw Collector current: 50A Case: GJ-UZ Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Application: Inverter; motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |
||||||||||||||
MG50UZ12GJ | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; GJ-UZ; screw Collector current: 50A Case: GJ-UZ Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Application: Inverter; motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
MG75HF12LEC1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A NTC Thermistor: No IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 657 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 5.2 nF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
MG75HF12TLC1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A NTC Thermistor: No IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 530 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 5.52 nF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
MG75P12E2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 442 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
MG75P12E2A | Yangjie Technology |
Description: Transistors - IGBTs - Modules E2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 300 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
MG75U12GJ | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 75A; GJ-U; screw Case: GJ-U Application: Inverter; motors Mechanical mounting: screw Type of module: IGBT Semiconductor structure: single transistor Pulsed collector current: 150A Max. off-state voltage: 1.2kV Collector current: 75A Gate-emitter voltage: ±20V Electrical mounting: screw |
Produkt ist nicht verfügbar |
||||||||||||||
MG75U12GJ | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 75A; GJ-U; screw Case: GJ-U Application: Inverter; motors Mechanical mounting: screw Type of module: IGBT Semiconductor structure: single transistor Pulsed collector current: 150A Max. off-state voltage: 1.2kV Collector current: 75A Gate-emitter voltage: ±20V Electrical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
MG75U12MRGJ | Yangjie Technology |
Description: Transistors - IGBTs - Modules GJ Packaging: Bulk Package / Case: SOT-227-4 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A NTC Thermistor: No Supplier Device Package: SOT-227 Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 420 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
MG75UZ12GJ | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 75A; GJ-UZ; screw Case: GJ-UZ Application: Inverter; motors Mechanical mounting: screw Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 75A Electrical mounting: screw |
Produkt ist nicht verfügbar |
||||||||||||||
MG75UZ12GJ | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 75A; GJ-UZ; screw Case: GJ-UZ Application: Inverter; motors Mechanical mounting: screw Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 75A Electrical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
MG75UZ12MRGJ | Yangjie Technology |
Description: Transistors - IGBTs - Modules GJ Packaging: Bulk Package / Case: SOT-227-4 Mounting Type: Chassis Mount Input: Standard Configuration: Single NTC Thermistor: No Supplier Device Package: SOT-227 Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
MMBD4148Q | Yangjie Technology |
Description: Diodes - Rectifiers - Single SOT Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
MMBD4448V | Yangjie Technology |
Description: Diodes - Rectifiers - Single SOT Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 250mA Supplier Device Package: SOT-563 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
MMBT2222A | YANGJIE TECHNOLOGY |
![]() ![]() ![]() ![]() ![]() ![]() ![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
auf Bestellung 3025 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
MMBT2222A | YANGJIE TECHNOLOGY |
![]() ![]() ![]() ![]() ![]() ![]() ![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Anzahl je Verpackung: 25 Stücke |
auf Bestellung 3025 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
MMBT2222AQ | Yangjie Technology |
Description: SOT-23 NPN 0.3W 0.6A 75V Transis Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
MMBT2222AQ | YANGJIE TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
MMBT2222AQ | YANGJIE TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry Anzahl je Verpackung: 25 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
MMBT2907A | YANGJIE TECHNOLOGY |
![]() ![]() ![]() ![]() ![]() ![]() ![]() Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
MMBT2907A | YANGJIE TECHNOLOGY |
![]() ![]() ![]() ![]() ![]() ![]() ![]() Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Anzahl je Verpackung: 5 Stücke |
auf Bestellung 800 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
MMBT2907AQ | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
MMBT2907AQ | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry |
auf Bestellung 1626 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
MMBT2907AQ | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1626 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
MMBT3904 | YANGJIE TECHNOLOGY |
![]() ![]() ![]() ![]() ![]() ![]() Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.35W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
auf Bestellung 4150 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
MMBT3904 | YANGJIE TECHNOLOGY |
![]() ![]() ![]() ![]() ![]() ![]() Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.35W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Anzahl je Verpackung: 25 Stücke |
auf Bestellung 4150 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
MMBT3904M3 | YANGJIE TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.1W; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.1W Case: SOT723 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
||||||||||||||
MMBT3904M3 | YANGJIE TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.1W; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.1W Case: SOT723 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
MMBT3904Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
MMBT3906 | YANGJIE TECHNOLOGY |
![]() ![]() ![]() ![]() Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
MMBT3906 | YANGJIE TECHNOLOGY |
![]() ![]() ![]() ![]() Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Anzahl je Verpackung: 50 Stücke |
auf Bestellung 350 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
MMBT3906Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
mmbt4401 | YANGJIE TECHNOLOGY |
![]() ![]() ![]() ![]() ![]() ![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
auf Bestellung 5200 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
mmbt4401 | YANGJIE TECHNOLOGY |
![]() ![]() ![]() ![]() ![]() ![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Anzahl je Verpackung: 5 Stücke |
auf Bestellung 5200 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
MMBT4401Q | Yangjie Technology |
Description: SOT-23 NPN 0.3W 0.6A 60V Transis Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
|
MG200HF12MRC2 |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Application: Inverter; motors
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Application: Inverter; motors
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Produkt ist nicht verfügbar
MG200HF12MRC2 |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 135.63 EUR |
20+ | 128.1 EUR |
40+ | 120.57 EUR |
80+ | 113.03 EUR |
160+ | 101.73 EUR |
400+ | 94.19 EUR |
MG200HF12MRC2 |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Application: Inverter; motors
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Application: Inverter; motors
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MG200HF12TLC2 |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.8 nF @ 25 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.8 nF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 145.84 EUR |
30+ | 137.74 EUR |
60+ | 129.64 EUR |
120+ | 121.53 EUR |
240+ | 109.38 EUR |
600+ | 101.28 EUR |
MG25P12E1 |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 113.54 EUR |
40+ | 107.24 EUR |
80+ | 100.93 EUR |
160+ | 94.62 EUR |
320+ | 85.16 EUR |
800+ | 78.85 EUR |
MG25P12E1A |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 78.26 EUR |
40+ | 73.91 EUR |
80+ | 69.56 EUR |
160+ | 65.21 EUR |
320+ | 58.69 EUR |
800+ | 54.35 EUR |
MG25P12P3 |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules P3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 175 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.9 nF @ 25 V
Description: Transistors - IGBTs - Modules P3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 175 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.9 nF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 64.07 EUR |
120+ | 60.51 EUR |
240+ | 56.95 EUR |
480+ | 53.39 EUR |
960+ | 48.05 EUR |
2400+ | 44.49 EUR |
MG25P12P3 |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: IGBT
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Case: P3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Application: Inverter; motors
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: IGBT
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Case: P3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Application: Inverter; motors
Produkt ist nicht verfügbar
MG25P12P3 |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: IGBT
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Case: P3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Application: Inverter; motors
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: IGBT
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Case: P3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Application: Inverter; motors
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MG300HF12MRC2 |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 164.54 EUR |
20+ | 155.4 EUR |
40+ | 146.26 EUR |
80+ | 137.12 EUR |
160+ | 123.41 EUR |
400+ | 114.27 EUR |
MG300HF12TLC2 |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 300A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1700 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.4 nF @ 25 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 300A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1700 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.4 nF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 140.8 EUR |
30+ | 132 EUR |
60+ | 123.2 EUR |
120+ | 114.4 EUR |
240+ | 105.6 EUR |
600+ | 93.28 EUR |
MG35P12E1A |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 166 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 166 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 94.83 EUR |
40+ | 89.56 EUR |
80+ | 84.29 EUR |
160+ | 79.02 EUR |
320+ | 71.12 EUR |
800+ | 65.85 EUR |
MG35P12P3 |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Application: Inverter; motors
Mechanical mounting: screw
Pulsed collector current: 70A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: P3
Gate-emitter voltage: ±20V
Collector current: 35A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Application: Inverter; motors
Mechanical mounting: screw
Pulsed collector current: 70A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: P3
Gate-emitter voltage: ±20V
Collector current: 35A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Produkt ist nicht verfügbar
MG35P12P3 |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules P3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 215 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Description: Transistors - IGBTs - Modules P3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 215 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 80.42 EUR |
120+ | 75.96 EUR |
240+ | 71.49 EUR |
480+ | 67.02 EUR |
960+ | 60.32 EUR |
2400+ | 55.85 EUR |
MG35P12P3 |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Application: Inverter; motors
Mechanical mounting: screw
Pulsed collector current: 70A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: P3
Gate-emitter voltage: ±20V
Collector current: 35A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Application: Inverter; motors
Mechanical mounting: screw
Pulsed collector current: 70A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: P3
Gate-emitter voltage: ±20V
Collector current: 35A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MG400HF12MRC2 |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1925 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1925 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 215.46 EUR |
20+ | 203.49 EUR |
40+ | 191.52 EUR |
80+ | 179.55 EUR |
160+ | 161.6 EUR |
400+ | 149.63 EUR |
MG40HF12LEC1 |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 48.73 EUR |
50+ | 46.02 EUR |
100+ | 43.32 EUR |
200+ | 40.61 EUR |
400+ | 36.55 EUR |
1000+ | 33.84 EUR |
MG40P12E1 |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 166 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 166 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 95.88 EUR |
40+ | 90.55 EUR |
80+ | 85.22 EUR |
160+ | 79.9 EUR |
320+ | 71.91 EUR |
800+ | 66.58 EUR |
MG50HF12LEC1 |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 50A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 50A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 50.52 EUR |
50+ | 47.71 EUR |
100+ | 44.9 EUR |
200+ | 42.1 EUR |
400+ | 37.89 EUR |
1000+ | 35.08 EUR |
MG50HF12TLC1 |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 485 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 485 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 60.56 EUR |
50+ | 57.19 EUR |
100+ | 53.83 EUR |
200+ | 50.46 EUR |
400+ | 45.42 EUR |
1000+ | 42.05 EUR |
MG50P12E1A |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 166 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 166 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 122.6 EUR |
40+ | 115.79 EUR |
80+ | 108.98 EUR |
160+ | 102.17 EUR |
320+ | 91.95 EUR |
800+ | 85.14 EUR |
MG50P12E2 |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 227 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 227 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 147.91 EUR |
30+ | 139.69 EUR |
60+ | 131.48 EUR |
120+ | 123.26 EUR |
240+ | 110.93 EUR |
600+ | 102.72 EUR |
MG50P12E2A |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 227 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 227 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 147.89 EUR |
30+ | 139.68 EUR |
60+ | 131.46 EUR |
120+ | 123.24 EUR |
240+ | 110.92 EUR |
600+ | 102.7 EUR |
MG50U12GJ |
Hersteller: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; GJ-U; screw
Collector current: 50A
Case: GJ-U
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Application: Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; GJ-U; screw
Collector current: 50A
Case: GJ-U
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Application: Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
MG50U12GJ |
Hersteller: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; GJ-U; screw
Collector current: 50A
Case: GJ-U
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Application: Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; GJ-U; screw
Collector current: 50A
Case: GJ-U
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Application: Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MG50UZ12GJ |
Hersteller: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; GJ-UZ; screw
Collector current: 50A
Case: GJ-UZ
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Application: Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; GJ-UZ; screw
Collector current: 50A
Case: GJ-UZ
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Application: Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
MG50UZ12GJ |
Hersteller: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; GJ-UZ; screw
Collector current: 50A
Case: GJ-UZ
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Application: Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; GJ-UZ; screw
Collector current: 50A
Case: GJ-UZ
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Application: Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MG75HF12LEC1 |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 657 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.2 nF @ 25 V
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 657 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.2 nF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 63.68 EUR |
50+ | 60.14 EUR |
100+ | 56.6 EUR |
200+ | 53.06 EUR |
400+ | 47.76 EUR |
1000+ | 44.22 EUR |
MG75HF12TLC1 |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 530 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.52 nF @ 25 V
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 530 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.52 nF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 66.11 EUR |
50+ | 62.43 EUR |
100+ | 58.76 EUR |
200+ | 55.09 EUR |
400+ | 49.58 EUR |
1000+ | 45.91 EUR |
MG75P12E2 |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 442 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 442 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 166 EUR |
30+ | 156.78 EUR |
60+ | 147.55 EUR |
120+ | 138.33 EUR |
240+ | 124.5 EUR |
600+ | 115.28 EUR |
MG75P12E2A |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 300 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 300 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 166.15 EUR |
30+ | 156.92 EUR |
60+ | 147.69 EUR |
120+ | 138.46 EUR |
240+ | 124.61 EUR |
600+ | 115.38 EUR |
MG75U12GJ |
Hersteller: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 75A; GJ-U; screw
Case: GJ-U
Application: Inverter; motors
Mechanical mounting: screw
Type of module: IGBT
Semiconductor structure: single transistor
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Collector current: 75A
Gate-emitter voltage: ±20V
Electrical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 75A; GJ-U; screw
Case: GJ-U
Application: Inverter; motors
Mechanical mounting: screw
Type of module: IGBT
Semiconductor structure: single transistor
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Collector current: 75A
Gate-emitter voltage: ±20V
Electrical mounting: screw
Produkt ist nicht verfügbar
MG75U12GJ |
Hersteller: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 75A; GJ-U; screw
Case: GJ-U
Application: Inverter; motors
Mechanical mounting: screw
Type of module: IGBT
Semiconductor structure: single transistor
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Collector current: 75A
Gate-emitter voltage: ±20V
Electrical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 75A; GJ-U; screw
Case: GJ-U
Application: Inverter; motors
Mechanical mounting: screw
Type of module: IGBT
Semiconductor structure: single transistor
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Collector current: 75A
Gate-emitter voltage: ±20V
Electrical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MG75U12MRGJ |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules GJ
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 420 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V
Description: Transistors - IGBTs - Modules GJ
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 420 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 49.45 EUR |
125+ | 46.7 EUR |
250+ | 43.95 EUR |
500+ | 41.21 EUR |
1000+ | 37.09 EUR |
2500+ | 34.34 EUR |
MG75UZ12GJ |
Hersteller: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 75A; GJ-UZ; screw
Case: GJ-UZ
Application: Inverter; motors
Mechanical mounting: screw
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Electrical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 75A; GJ-UZ; screw
Case: GJ-UZ
Application: Inverter; motors
Mechanical mounting: screw
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Electrical mounting: screw
Produkt ist nicht verfügbar
MG75UZ12GJ |
Hersteller: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 75A; GJ-UZ; screw
Case: GJ-UZ
Application: Inverter; motors
Mechanical mounting: screw
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Electrical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 75A; GJ-UZ; screw
Case: GJ-UZ
Application: Inverter; motors
Mechanical mounting: screw
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Electrical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MG75UZ12MRGJ |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules GJ
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: Transistors - IGBTs - Modules GJ
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 52.98 EUR |
125+ | 50.04 EUR |
250+ | 47.09 EUR |
500+ | 44.15 EUR |
1000+ | 39.74 EUR |
2500+ | 36.79 EUR |
MMBD4148Q |
Hersteller: Yangjie Technology
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.033 EUR |
15000+ | 0.032 EUR |
30000+ | 0.03 EUR |
60000+ | 0.028 EUR |
120000+ | 0.025 EUR |
300000+ | 0.023 EUR |
MMBD4448V |
Hersteller: Yangjie Technology
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: SOT-563
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: SOT-563
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.044 EUR |
15000+ | 0.04 EUR |
30000+ | 0.039 EUR |
60000+ | 0.037 EUR |
120000+ | 0.033 EUR |
300000+ | 0.03 EUR |
MMBT2222A |
![]() ![]() ![]() ![]() ![]() ![]() ![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 3025 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1825+ | 0.039 EUR |
3025+ | 0.024 EUR |
MMBT2222A |
![]() ![]() ![]() ![]() ![]() ![]() ![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 25 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 25 Stücke
auf Bestellung 3025 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1825+ | 0.039 EUR |
3025+ | 0.024 EUR |
MMBT2222AQ |
Hersteller: Yangjie Technology
Description: SOT-23 NPN 0.3W 0.6A 75V Transis
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 NPN 0.3W 0.6A 75V Transis
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.037 EUR |
15000+ | 0.035 EUR |
30000+ | 0.032 EUR |
60000+ | 0.03 EUR |
120000+ | 0.028 EUR |
300000+ | 0.025 EUR |
MMBT2222AQ |
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Produkt ist nicht verfügbar
MMBT2222AQ |
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Anzahl je Verpackung: 25 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Anzahl je Verpackung: 25 Stücke
Produkt ist nicht verfügbar
MMBT2907A |
![]() ![]() ![]() ![]() ![]() ![]() ![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
800+ | 0.089 EUR |
MMBT2907A |
![]() ![]() ![]() ![]() ![]() ![]() ![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 5 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 800 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
800+ | 0.089 EUR |
1165+ | 0.061 EUR |
3195+ | 0.023 EUR |
MMBT2907AQ |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.04 EUR |
15000+ | 0.039 EUR |
30000+ | 0.037 EUR |
60000+ | 0.033 EUR |
120000+ | 0.032 EUR |
300000+ | 0.028 EUR |
MMBT2907AQ |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
auf Bestellung 1626 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
334+ | 0.21 EUR |
650+ | 0.11 EUR |
933+ | 0.077 EUR |
1306+ | 0.055 EUR |
1626+ | 0.044 EUR |
MMBT2907AQ |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1626 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
334+ | 0.21 EUR |
650+ | 0.11 EUR |
933+ | 0.077 EUR |
1306+ | 0.055 EUR |
1626+ | 0.044 EUR |
MMBT3904 |
![]() ![]() ![]() ![]() ![]() ![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 4150 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1825+ | 0.039 EUR |
4150+ | 0.017 EUR |
MMBT3904 |
![]() ![]() ![]() ![]() ![]() ![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 25 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 25 Stücke
auf Bestellung 4150 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1825+ | 0.039 EUR |
4150+ | 0.017 EUR |
MMBT3904M3 |
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.1W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.1W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.1W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.1W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
MMBT3904M3 |
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.1W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.1W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.1W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.1W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
MMBT3904Q |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.033 EUR |
15000+ | 0.032 EUR |
30000+ | 0.03 EUR |
60000+ | 0.028 EUR |
120000+ | 0.025 EUR |
300000+ | 0.023 EUR |
MMBT3906 |
![]() ![]() ![]() ![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
350+ | 0.2 EUR |
MMBT3906 |
![]() ![]() ![]() ![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Anzahl je Verpackung: 50 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Anzahl je Verpackung: 50 Stücke
auf Bestellung 350 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
350+ | 0.2 EUR |
1000+ | 0.072 EUR |
1550+ | 0.046 EUR |
4250+ | 0.017 EUR |
MMBT3906Q |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.033 EUR |
15000+ | 0.032 EUR |
30000+ | 0.03 EUR |
60000+ | 0.028 EUR |
120000+ | 0.025 EUR |
300000+ | 0.023 EUR |
mmbt4401 |
![]() ![]() ![]() ![]() ![]() ![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
auf Bestellung 5200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2720+ | 0.026 EUR |
4170+ | 0.017 EUR |
4720+ | 0.015 EUR |
5155+ | 0.014 EUR |
mmbt4401 |
![]() ![]() ![]() ![]() ![]() ![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Anzahl je Verpackung: 5 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5200 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2720+ | 0.026 EUR |
4170+ | 0.017 EUR |
4720+ | 0.015 EUR |
5155+ | 0.014 EUR |
MMBT4401Q |
Hersteller: Yangjie Technology
Description: SOT-23 NPN 0.3W 0.6A 60V Transis
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 NPN 0.3W 0.6A 60V Transis
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.033 EUR |
15000+ | 0.032 EUR |
30000+ | 0.03 EUR |
60000+ | 0.028 EUR |
120000+ | 0.025 EUR |
300000+ | 0.023 EUR |