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MG35P12P3 Yangjie Technology
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules P3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 215 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Description: Transistors - IGBTs - Modules P3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 215 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
24+ | 80.42 EUR |
120+ | 75.96 EUR |
240+ | 71.49 EUR |
480+ | 67.02 EUR |
960+ | 60.32 EUR |
2400+ | 55.85 EUR |
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Technische Details MG35P12P3 Yangjie Technology
Description: Transistors - IGBTs - Modules P3, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Three Phase Inverter with Brake, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A, NTC Thermistor: Yes, Part Status: Active, Current - Collector (Ic) (Max): 35 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 215 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 2 nF @ 25 V.
Weitere Produktangebote MG35P12P3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MG35P12P3 | Hersteller : YANGJIE TECHNOLOGY |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3 Application: Inverter; motors Mechanical mounting: screw Pulsed collector current: 70A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: P3 Gate-emitter voltage: ±20V Collector current: 35A Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MG35P12P3 | Hersteller : YANGJIE TECHNOLOGY |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3 Application: Inverter; motors Mechanical mounting: screw Pulsed collector current: 70A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: P3 Gate-emitter voltage: ±20V Collector current: 35A Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge |
Produkt ist nicht verfügbar |