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BZD27B130P-HE3-18 BZD27B130P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 130V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B13P-HE3-18 BZD27B13P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 13V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B150P-HE3-18 BZD27B150P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 150V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B160P-HE3-18 BZD27B160P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 160V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B16P-HE3-18 BZD27B16P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 16V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B180P-HE3-18 BZD27B180P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 180V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B18P-HE3-18 BZD27B18P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 18V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B30P-HE3-18 BZD27B30P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 30V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B33P-HE3-18 BZD27B33P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 33V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 24 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B3V6P-HE3-18 BZD27B3V6P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 3.6V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B3V9P-HE3-18 BZD27B3V9P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 3.9V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B4V3P-HE3-18 BZD27B4V3P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 4.3V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B4V7P-HE3-18 BZD27B4V7P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 4.7V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B56P-HE3-18 BZD27B56P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 56V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B5V1P-HE3-18 BZD27B5V1P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 5.1V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B62P-HE3-18 BZD27B62P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 62V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 47 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B68P-HE3-18 BZD27B68P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 68V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 51 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B6V2P-HE3-18 BZD27B6V2P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 6.2V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B6V8P-HE3-18 BZD27B6V8P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 6.8V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B75P-HE3-18 BZD27B75P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 75V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 56 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B7V5P-HE3-18 BZD27B7V5P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 7.5V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B82P-HE3-18 BZD27B82P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 82V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 62 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B8V2P-HE3-18 BZD27B8V2P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 8.2V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B91P-HE3-18 BZD27B91P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 91V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 68 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B9V1P-HE3-18 BZD27B9V1P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 9.1V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S1KHE3_A/I S1KHE3_A/I Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
7500+0.11 EUR
Mindestbestellmenge: 7500
S1KHE3_A/I S1KHE3_A/I Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 13950 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
39+ 0.46 EUR
100+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.14 EUR
2000+ 0.12 EUR
Mindestbestellmenge: 28
S1KHM3_A/H S1KHM3_A/H Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.16 EUR
3600+ 0.14 EUR
9000+ 0.12 EUR
Mindestbestellmenge: 1800
S1KHM3_A/H S1KHM3_A/H Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
40+ 0.45 EUR
100+ 0.23 EUR
500+ 0.2 EUR
Mindestbestellmenge: 28
V8PM10HM3/H V8PM10HM3/H Vishay General Semiconductor - Diodes Division v8pm10.pdf Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
Current - Reverse Leakage @ Vr: 60 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.43 EUR
3000+ 0.38 EUR
7500+ 0.36 EUR
Mindestbestellmenge: 1500
V8PM10HM3/H V8PM10HM3/H Vishay General Semiconductor - Diodes Division v8pm10.pdf Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
Current - Reverse Leakage @ Vr: 60 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 9346 Stücke:
Lieferzeit 10-14 Tag (e)
18+1 EUR
21+ 0.87 EUR
100+ 0.6 EUR
500+ 0.5 EUR
Mindestbestellmenge: 18
GSOT36C-G3-18 GSOT36C-G3-18 Vishay General Semiconductor - Diodes Division gsot03c.pdf Description: TVS DIODE 36VWM 71VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 52pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 39V
Voltage - Clamping (Max) @ Ipp: 71V
Power - Peak Pulse: 248W
Power Line Protection: No
Produkt ist nicht verfügbar
GSOT36C-G3-18 GSOT36C-G3-18 Vishay General Semiconductor - Diodes Division gsot03c.pdf Description: TVS DIODE 36VWM 71VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 52pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 39V
Voltage - Clamping (Max) @ Ipp: 71V
Power - Peak Pulse: 248W
Power Line Protection: No
auf Bestellung 8910 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
37+ 0.48 EUR
100+ 0.24 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
Mindestbestellmenge: 26
MMSZ5243B-E3-08 MMSZ5243B-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 13V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.072 EUR
6000+ 0.067 EUR
9000+ 0.056 EUR
Mindestbestellmenge: 3000
MMSZ5243B-E3-08 MMSZ5243B-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 13V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
auf Bestellung 18649 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
60+ 0.29 EUR
123+ 0.14 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
Mindestbestellmenge: 40
MMSZ5243C-HE3-08 MMSZ5243C-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 13V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMSZ5243C-HE3-08 MMSZ5243C-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 13V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
auf Bestellung 2340 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
48+ 0.37 EUR
100+ 0.18 EUR
500+ 0.15 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 34
MMSZ5243B-HE3_A-08 MMSZ5243B-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 13V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMSZ5243B-HE3_A-18 MMSZ5243B-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 13V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMSZ5243C-HE3_A-08 MMSZ5243C-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 13V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMSZ5243C-HE3_A-18 MMSZ5243C-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 13V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
5KP120AHE3_A/C 5KP120AHE3_A/C Vishay General Semiconductor - Diodes Division 5kp8_5a.pdf Description: TVS DIODE
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 25.9A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
5KP12AHE3_A/C 5KP12AHE3_A/C Vishay General Semiconductor - Diodes Division 5kp8_5a.pdf Description: TVS DIODE
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 251A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S4PD-M3/86A S4PD-M3/86A Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 200V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.28 EUR
3000+ 0.25 EUR
Mindestbestellmenge: 1500
S4PD-M3/86A S4PD-M3/86A Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 200V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 3952 Stücke:
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24+0.76 EUR
28+ 0.64 EUR
100+ 0.45 EUR
500+ 0.35 EUR
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S4PJHM3_A/H S4PJHM3_A/H Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 600V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.32 EUR
Mindestbestellmenge: 1500
S4PJHM3_A/H S4PJHM3_A/H Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 600V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 2366 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
25+ 0.73 EUR
100+ 0.51 EUR
500+ 0.39 EUR
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S4PB-M3/86A S4PB-M3/86A Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
S4PB-M3/86A S4PB-M3/86A Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 2840 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
28+ 0.64 EUR
100+ 0.45 EUR
500+ 0.35 EUR
Mindestbestellmenge: 24
S4PBHM3_B/I S4PBHM3_B/I Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S4PGHM3_B/I S4PGHM3_B/I Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 400V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S4PGHM3_B/H S4PGHM3_B/H Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 400V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S4PKHM3_B/H S4PKHM3_B/H Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 800V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S4PDHM3_B/I S4PDHM3_B/I Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 200V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S4PJHM3_B/H S4PJHM3_B/H Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 600V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S4PJHM3_B/I S4PJHM3_B/I Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 600V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S4PMHM3_B/I S4PMHM3_B/I Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 1KV 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S4PKHM3_B/I S4PKHM3_B/I Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 800V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S4PDHM3_B/H S4PDHM3_B/H Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 200V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S4PMHM3_B/H S4PMHM3_B/H Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 1KV 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B130P-HE3-18 bzd27bseries.pdf
BZD27B130P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 130V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B13P-HE3-18 bzd27bseries.pdf
BZD27B13P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B150P-HE3-18 bzd27bseries.pdf
BZD27B150P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 150V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B160P-HE3-18 bzd27bseries.pdf
BZD27B160P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 160V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B16P-HE3-18 bzd27bseries.pdf
BZD27B16P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B180P-HE3-18 bzd27bseries.pdf
BZD27B180P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 180V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B18P-HE3-18 bzd27bseries.pdf
BZD27B18P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B30P-HE3-18 bzd27bseries.pdf
BZD27B30P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B33P-HE3-18 bzd27bseries.pdf
BZD27B33P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 24 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B3V6P-HE3-18 bzd27bseries.pdf
BZD27B3V6P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B3V9P-HE3-18 bzd27bseries.pdf
BZD27B3V9P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B4V3P-HE3-18 bzd27bseries.pdf
BZD27B4V3P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B4V7P-HE3-18 bzd27bseries.pdf
BZD27B4V7P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B56P-HE3-18 bzd27bseries.pdf
BZD27B56P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 56V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B5V1P-HE3-18 bzd27bseries.pdf
BZD27B5V1P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B62P-HE3-18 bzd27bseries.pdf
BZD27B62P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 62V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 47 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B68P-HE3-18 bzd27bseries.pdf
BZD27B68P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 68V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 51 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B6V2P-HE3-18 bzd27bseries.pdf
BZD27B6V2P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B6V8P-HE3-18 bzd27bseries.pdf
BZD27B6V8P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B75P-HE3-18 bzd27bseries.pdf
BZD27B75P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 56 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B7V5P-HE3-18 bzd27bseries.pdf
BZD27B7V5P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B82P-HE3-18 bzd27bseries.pdf
BZD27B82P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 82V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 62 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B8V2P-HE3-18 bzd27bseries.pdf
BZD27B8V2P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B91P-HE3-18 bzd27bseries.pdf
BZD27B91P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 91V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 68 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27B9V1P-HE3-18 bzd27bseries.pdf
BZD27B9V1P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S1KHE3_A/I s1.pdf
S1KHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7500+0.11 EUR
Mindestbestellmenge: 7500
S1KHE3_A/I s1.pdf
S1KHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 13950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.65 EUR
39+ 0.46 EUR
100+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.14 EUR
2000+ 0.12 EUR
Mindestbestellmenge: 28
S1KHM3_A/H s1.pdf
S1KHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1800+0.16 EUR
3600+ 0.14 EUR
9000+ 0.12 EUR
Mindestbestellmenge: 1800
S1KHM3_A/H s1.pdf
S1KHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.63 EUR
40+ 0.45 EUR
100+ 0.23 EUR
500+ 0.2 EUR
Mindestbestellmenge: 28
V8PM10HM3/H v8pm10.pdf
V8PM10HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
Current - Reverse Leakage @ Vr: 60 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+0.43 EUR
3000+ 0.38 EUR
7500+ 0.36 EUR
Mindestbestellmenge: 1500
V8PM10HM3/H v8pm10.pdf
V8PM10HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
Current - Reverse Leakage @ Vr: 60 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 9346 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1 EUR
21+ 0.87 EUR
100+ 0.6 EUR
500+ 0.5 EUR
Mindestbestellmenge: 18
GSOT36C-G3-18 gsot03c.pdf
GSOT36C-G3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 71VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 52pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 39V
Voltage - Clamping (Max) @ Ipp: 71V
Power - Peak Pulse: 248W
Power Line Protection: No
Produkt ist nicht verfügbar
GSOT36C-G3-18 gsot03c.pdf
GSOT36C-G3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 71VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 52pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 39V
Voltage - Clamping (Max) @ Ipp: 71V
Power - Peak Pulse: 248W
Power Line Protection: No
auf Bestellung 8910 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
37+ 0.48 EUR
100+ 0.24 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
Mindestbestellmenge: 26
MMSZ5243B-E3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5243B-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.072 EUR
6000+ 0.067 EUR
9000+ 0.056 EUR
Mindestbestellmenge: 3000
MMSZ5243B-E3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5243B-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
auf Bestellung 18649 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
40+0.44 EUR
60+ 0.29 EUR
123+ 0.14 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
Mindestbestellmenge: 40
MMSZ5243C-HE3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5243C-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMSZ5243C-HE3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5243C-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
auf Bestellung 2340 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
48+ 0.37 EUR
100+ 0.18 EUR
500+ 0.15 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 34
MMSZ5243B-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5243B-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMSZ5243B-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5243B-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMSZ5243C-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5243C-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMSZ5243C-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5243C-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
5KP120AHE3_A/C 5kp8_5a.pdf
5KP120AHE3_A/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 25.9A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
5KP12AHE3_A/C 5kp8_5a.pdf
5KP12AHE3_A/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 251A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S4PD-M3/86A s4pm.pdf
S4PD-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+0.28 EUR
3000+ 0.25 EUR
Mindestbestellmenge: 1500
S4PD-M3/86A s4pm.pdf
S4PD-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 3952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
28+ 0.64 EUR
100+ 0.45 EUR
500+ 0.35 EUR
Mindestbestellmenge: 24
S4PJHM3_A/H s4pm.pdf
S4PJHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+0.32 EUR
Mindestbestellmenge: 1500
S4PJHM3_A/H s4pm.pdf
S4PJHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 2366 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.84 EUR
25+ 0.73 EUR
100+ 0.51 EUR
500+ 0.39 EUR
Mindestbestellmenge: 21
S4PB-M3/86A s4pm.pdf
S4PB-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
S4PB-M3/86A s4pm.pdf
S4PB-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 2840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
28+ 0.64 EUR
100+ 0.45 EUR
500+ 0.35 EUR
Mindestbestellmenge: 24
S4PBHM3_B/I s4pm.pdf
S4PBHM3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S4PGHM3_B/I s4pm.pdf
S4PGHM3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S4PGHM3_B/H s4pm.pdf
S4PGHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S4PKHM3_B/H s4pm.pdf
S4PKHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S4PDHM3_B/I s4pm.pdf
S4PDHM3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S4PJHM3_B/H s4pm.pdf
S4PJHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S4PJHM3_B/I s4pm.pdf
S4PJHM3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S4PMHM3_B/I s4pm.pdf
S4PMHM3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S4PKHM3_B/I s4pm.pdf
S4PKHM3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S4PDHM3_B/H s4pm.pdf
S4PDHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S4PMHM3_B/H s4pm.pdf
S4PMHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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