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SS36HE3_B/I SS36HE3_B/I Vishay General Semiconductor - Diodes Division ss32.pdf Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
3500+0.36 EUR
Mindestbestellmenge: 3500
VS-30ETH06STRR-M3 VS-30ETH06STRR-M3 Vishay General Semiconductor - Diodes Division vs-30eth06s-m3.pdf Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.49 EUR
1600+ 1.26 EUR
2400+ 1.2 EUR
Mindestbestellmenge: 800
SS34HE3_B/I SS34HE3_B/I Vishay General Semiconductor - Diodes Division ss32.pdf Description: DIODE SCHOTTKY 40V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
3500+0.35 EUR
Mindestbestellmenge: 3500
SS23SHE3_B/I SS23SHE3_B/I Vishay General Semiconductor - Diodes Division ss22s.pdf Description: DIODE SCHOTTKY 30V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SS23SHE3_B/H SS23SHE3_B/H Vishay General Semiconductor - Diodes Division ss22s.pdf Description: DIODE SCHOTTKY 2A 30V DO-214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMSZ4699-HE3_A-18 MMSZ4699-HE3_A-18 Vishay General Semiconductor - Diodes Division MMSZ4681_to_MMSZ4717_Rev2.0_2-18-20.pdf Description: DIODE ZENER 12V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMSZ4699-HE3_A-08 MMSZ4699-HE3_A-08 Vishay General Semiconductor - Diodes Division MMSZ4681_to_MMSZ4717_Rev2.0_2-18-20.pdf Description: DIODE ZENER 12V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-8EWH06FNTRL-M3 VS-8EWH06FNTRL-M3 Vishay General Semiconductor - Diodes Division vs-8ewh06fn-m3.pdf Description: DIODE GEN PURP 600V 8A D-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
VS-6EWH06FNTRHM3 VS-6EWH06FNTRHM3 Vishay General Semiconductor - Diodes Division vs-6ewx06fn.pdf Description: DIODE GEN PURP 600V 6A D-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.32 EUR
Mindestbestellmenge: 2000
VS-15EWH06FNTRL-M3 VS-15EWH06FNTRL-M3 Vishay General Semiconductor - Diodes Division vs-15ewh06fn-m3.pdf Description: DIODE GEN PURP 600V 15A D-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
1.5KE120CAHE3_B/C 1.5KE120CAHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: 1.5KW,120V 5%,BIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 9.5A
Voltage - Reverse Standoff (Typ): 102V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-ETU3006STRLHM3 VS-ETU3006STRLHM3 Vishay General Semiconductor - Diodes Division vs-etu3006hsm3.pdf Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-42HFR80 Vishay General Semiconductor - Diodes Division vs-40hfrseries.pdf Description: DIODE GP REV 800V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
auf Bestellung 99 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.83 EUR
10+ 11.01 EUR
Mindestbestellmenge: 2
BZX84C7V5-HE3_A-18 BZX84C7V5-HE3_A-18 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 7.5V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZX84C7V5-HE3_A-08 BZX84C7V5-HE3_A-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 7.5V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ28AHE3_A/H SMAJ28AHE3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 28VWM 45.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.21 EUR
3600+ 0.19 EUR
Mindestbestellmenge: 1800
ESH2PBHM3/84A ESH2PBHM3/84A Vishay General Semiconductor - Diodes Division esh2pb.pdf Description: DIODE GEN PURP 100V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.23 EUR
6000+ 0.22 EUR
Mindestbestellmenge: 3000
ESH2PBHM3/84A ESH2PBHM3/84A Vishay General Semiconductor - Diodes Division esh2pb.pdf Description: DIODE GEN PURP 100V 2A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
30+ 0.59 EUR
100+ 0.41 EUR
500+ 0.32 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 26
ESH2C-E3/52T ESH2C-E3/52T Vishay General Semiconductor - Diodes Division esh2b.pdf Description: DIODE GEN PURP 150V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
750+0.32 EUR
1500+ 0.26 EUR
2250+ 0.23 EUR
Mindestbestellmenge: 750
ESH2C-E3/52T ESH2C-E3/52T Vishay General Semiconductor - Diodes Division esh2b.pdf Description: DIODE GEN PURP 150V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
auf Bestellung 5150 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
31+ 0.58 EUR
100+ 0.41 EUR
Mindestbestellmenge: 26
ESH2B-E3/5BT ESH2B-E3/5BT Vishay General Semiconductor - Diodes Division esh2b.pdf Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
ESH2B-E3/5BT ESH2B-E3/5BT Vishay General Semiconductor - Diodes Division esh2b.pdf Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 2150 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
31+ 0.58 EUR
100+ 0.41 EUR
500+ 0.32 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 26
ESH2D-E3/52T ESH2D-E3/52T Vishay General Semiconductor - Diodes Division esh2b.pdf Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
750+0.32 EUR
Mindestbestellmenge: 750
ESH2D-E3/52T ESH2D-E3/52T Vishay General Semiconductor - Diodes Division esh2b.pdf Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 1685 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
31+ 0.58 EUR
100+ 0.41 EUR
Mindestbestellmenge: 26
ESH2PCHM3/84A ESH2PCHM3/84A Vishay General Semiconductor - Diodes Division esh2pb.pdf Description: DIODE GEN PURP 150V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Produkt ist nicht verfügbar
ESH2PCHM3/84A ESH2PCHM3/84A Vishay General Semiconductor - Diodes Division esh2pb.pdf Description: DIODE GEN PURP 150V 2A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 569 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
30+ 0.59 EUR
100+ 0.41 EUR
500+ 0.32 EUR
Mindestbestellmenge: 26
ESH2PDHM3/84A ESH2PDHM3/84A Vishay General Semiconductor - Diodes Division esh2pb.pdf Description: DIODE GEN PURP 200V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
ESH2PDHM3/84A ESH2PDHM3/84A Vishay General Semiconductor - Diodes Division esh2pb.pdf Description: DIODE GEN PURP 200V 2A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 860 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
29+ 0.62 EUR
100+ 0.43 EUR
500+ 0.34 EUR
Mindestbestellmenge: 25
P4SMA400AHM3_B/H P4SMA400AHM3_B/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 342VWM 548VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 550mA
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 5400 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.37 EUR
3600+ 0.33 EUR
5400+ 0.31 EUR
Mindestbestellmenge: 1800
P4SMA400AHM3_B/H P4SMA400AHM3_B/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 342VWM 548VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 550mA
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 5400 Stücke:
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SMAJ12AHE3_A/H SMAJ12AHE3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 12VWM 19.9VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20.1A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1800+0.21 EUR
3600+ 0.19 EUR
5400+ 0.18 EUR
Mindestbestellmenge: 1800
5KP14AHE3_A/C 5KP14AHE3_A/C Vishay General Semiconductor - Diodes Division 5kp8_5a.pdf Description: TVS DIODE
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 216A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SL44HE3_B/H SL44HE3_B/H Vishay General Semiconductor - Diodes Division sl42.pdf Description: DIODE SCHOTTKY 40V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2550 Stücke:
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850+0.74 EUR
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VS-15ETH06STRR-M3 VS-15ETH06STRR-M3 Vishay General Semiconductor - Diodes Division vs-15eth06s-m3-1-m3.pdf Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 1600 Stücke:
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800+1.11 EUR
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UGB8DTHE3_A/I UGB8DTHE3_A/I Vishay General Semiconductor - Diodes Division ug8xt.pdf Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
UGB8DTHE3_A/P UGB8DTHE3_A/P Vishay General Semiconductor - Diodes Division ug8xt.pdf Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tube
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SE8D20J-M3/I SE8D20J-M3/I Vishay General Semiconductor - Diodes Division se8d20d_g_j.pdf Description: DIODE GEN PURP 600V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SE8D20J-M3/I SE8D20J-M3/I Vishay General Semiconductor - Diodes Division se8d20d_g_j.pdf Description: DIODE GEN PURP 600V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13990 Stücke:
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24+0.74 EUR
31+ 0.58 EUR
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500+ 0.32 EUR
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5000+ 0.19 EUR
Mindestbestellmenge: 24
SE8D20GHM3/I SE8D20GHM3/I Vishay General Semiconductor - Diodes Division se8d20d_g_j.pdf Description: DIODE GEN PURP 400V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
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14000+0.2 EUR
Mindestbestellmenge: 14000
SE8D20GHM3/I SE8D20GHM3/I Vishay General Semiconductor - Diodes Division se8d20d_g_j.pdf Description: DIODE GEN PURP 400V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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21+0.84 EUR
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5000+ 0.22 EUR
Mindestbestellmenge: 21
SE8D20JHM3/I SE8D20JHM3/I Vishay General Semiconductor - Diodes Division se8d20d_g_j.pdf Description: DIODE GEN PURP 600V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
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14000+0.2 EUR
Mindestbestellmenge: 14000
SE8D20JHM3/I SE8D20JHM3/I Vishay General Semiconductor - Diodes Division se8d20d_g_j.pdf Description: DIODE GEN PURP 600V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
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21+0.84 EUR
27+ 0.66 EUR
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500+ 0.37 EUR
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5000+ 0.22 EUR
Mindestbestellmenge: 21
SE8D20G-M3/I SE8D20G-M3/I Vishay General Semiconductor - Diodes Division se8d20d_g_j.pdf Description: DIODE GEN PURP 400V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SE8D20G-M3/I SE8D20G-M3/I Vishay General Semiconductor - Diodes Division se8d20d_g_j.pdf Description: DIODE GEN PURP 400V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 13930 Stücke:
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2000+ 0.2 EUR
5000+ 0.19 EUR
Mindestbestellmenge: 24
ZPY18-TR ZPY18-TR Vishay General Semiconductor - Diodes Division zpy3v9.pdf Description: DIODE ZENER 18V 1.3W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 14 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
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5000+0.1 EUR
10000+ 0.087 EUR
Mindestbestellmenge: 5000
ZPY18-TR ZPY18-TR Vishay General Semiconductor - Diodes Division zpy3v9.pdf Description: DIODE ZENER 18V 1.3W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 14 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 24819 Stücke:
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2000+ 0.1 EUR
Mindestbestellmenge: 31
BZT03C22-TR BZT03C22-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 18VWM 31VC SOD57
Packaging: Tape & Reel (TR)
Tolerance: ±5.68%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
auf Bestellung 20000 Stücke:
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BZT03C22-TR BZT03C22-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 18VWM 31VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±5.68%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
auf Bestellung 21707 Stücke:
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SMCJ43AHM3_A/H SMCJ43AHM3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMCJ43AHM3_A/I SMCJ43AHM3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMCJ43AHE3_A/H SMCJ43AHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 21.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMCJ43AHE3_A/I SMCJ43AHE3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 21.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ14CAHM3_A/I SMAJ14CAHM3_A/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
P4SMA39CAHE3_A/I P4SMA39CAHE3_A/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
P4SMA39CAHE3_A/I P4SMA39CAHE3_A/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7038 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
29+ 0.63 EUR
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500+ 0.34 EUR
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Mindestbestellmenge: 24
P4SMA39CAHM3_A/H P4SMA39CAHM3_A/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
P4SMA39CAHM3_A/I P4SMA39CAHM3_A/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
P4SMA27CAHE3_A/H P4SMA27CAHE3_A/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 10.7A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.22 EUR
3600+ 0.2 EUR
Mindestbestellmenge: 1800
P4SMA27CAHE3_A/H P4SMA27CAHE3_A/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 10.7A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
31+ 0.58 EUR
100+ 0.35 EUR
500+ 0.32 EUR
Mindestbestellmenge: 24
SMBJ16CAHE3_B/H SMBJ16CAHE3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: 600W,16V 5%,BIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SS36HE3_B/I ss32.pdf
SS36HE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3500+0.36 EUR
Mindestbestellmenge: 3500
VS-30ETH06STRR-M3 vs-30eth06s-m3.pdf
VS-30ETH06STRR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+1.49 EUR
1600+ 1.26 EUR
2400+ 1.2 EUR
Mindestbestellmenge: 800
SS34HE3_B/I ss32.pdf
SS34HE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3500+0.35 EUR
Mindestbestellmenge: 3500
SS23SHE3_B/I ss22s.pdf
SS23SHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SS23SHE3_B/H ss22s.pdf
SS23SHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 2A 30V DO-214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMSZ4699-HE3_A-18 MMSZ4681_to_MMSZ4717_Rev2.0_2-18-20.pdf
MMSZ4699-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMSZ4699-HE3_A-08 MMSZ4681_to_MMSZ4717_Rev2.0_2-18-20.pdf
MMSZ4699-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-8EWH06FNTRL-M3 vs-8ewh06fn-m3.pdf
VS-8EWH06FNTRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A D-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
VS-6EWH06FNTRHM3 vs-6ewx06fn.pdf
VS-6EWH06FNTRHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A D-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+1.32 EUR
Mindestbestellmenge: 2000
VS-15EWH06FNTRL-M3 vs-15ewh06fn-m3.pdf
VS-15EWH06FNTRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A D-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
1.5KE120CAHE3_B/C 15ke.pdf
1.5KE120CAHE3_B/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 1.5KW,120V 5%,BIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 9.5A
Voltage - Reverse Standoff (Typ): 102V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-ETU3006STRLHM3 vs-etu3006hsm3.pdf
VS-ETU3006STRLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-42HFR80 vs-40hfrseries.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 800V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
auf Bestellung 99 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+12.83 EUR
10+ 11.01 EUR
Mindestbestellmenge: 2
BZX84C7V5-HE3_A-18 bzx84_series.pdf
BZX84C7V5-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZX84C7V5-HE3_A-08 bzx84_series.pdf
BZX84C7V5-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ28AHE3_A/H smaj50a.pdf
SMAJ28AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28VWM 45.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1800+0.21 EUR
3600+ 0.19 EUR
Mindestbestellmenge: 1800
ESH2PBHM3/84A esh2pb.pdf
ESH2PBHM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.23 EUR
6000+ 0.22 EUR
Mindestbestellmenge: 3000
ESH2PBHM3/84A esh2pb.pdf
ESH2PBHM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
30+ 0.59 EUR
100+ 0.41 EUR
500+ 0.32 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 26
ESH2C-E3/52T esh2b.pdf
ESH2C-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
750+0.32 EUR
1500+ 0.26 EUR
2250+ 0.23 EUR
Mindestbestellmenge: 750
ESH2C-E3/52T esh2b.pdf
ESH2C-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
auf Bestellung 5150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
31+ 0.58 EUR
100+ 0.41 EUR
Mindestbestellmenge: 26
ESH2B-E3/5BT esh2b.pdf
ESH2B-E3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
ESH2B-E3/5BT esh2b.pdf
ESH2B-E3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 2150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
31+ 0.58 EUR
100+ 0.41 EUR
500+ 0.32 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 26
ESH2D-E3/52T esh2b.pdf
ESH2D-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
750+0.32 EUR
Mindestbestellmenge: 750
ESH2D-E3/52T esh2b.pdf
ESH2D-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 1685 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
31+ 0.58 EUR
100+ 0.41 EUR
Mindestbestellmenge: 26
ESH2PCHM3/84A esh2pb.pdf
ESH2PCHM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Produkt ist nicht verfügbar
ESH2PCHM3/84A esh2pb.pdf
ESH2PCHM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 2A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 569 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
30+ 0.59 EUR
100+ 0.41 EUR
500+ 0.32 EUR
Mindestbestellmenge: 26
ESH2PDHM3/84A esh2pb.pdf
ESH2PDHM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
ESH2PDHM3/84A esh2pb.pdf
ESH2PDHM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
29+ 0.62 EUR
100+ 0.43 EUR
500+ 0.34 EUR
Mindestbestellmenge: 25
P4SMA400AHM3_B/H p4sma.pdf
P4SMA400AHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 342VWM 548VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 550mA
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 5400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1800+0.37 EUR
3600+ 0.33 EUR
5400+ 0.31 EUR
Mindestbestellmenge: 1800
P4SMA400AHM3_B/H p4sma.pdf
P4SMA400AHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 342VWM 548VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 550mA
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 5400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.97 EUR
22+ 0.83 EUR
100+ 0.58 EUR
500+ 0.45 EUR
Mindestbestellmenge: 19
SMAJ12AHE3_A/H smaj50a.pdf
SMAJ12AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 19.9VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20.1A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1800+0.21 EUR
3600+ 0.19 EUR
5400+ 0.18 EUR
Mindestbestellmenge: 1800
5KP14AHE3_A/C 5kp8_5a.pdf
5KP14AHE3_A/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 216A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SL44HE3_B/H sl42.pdf
SL44HE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
850+0.74 EUR
1700+ 0.6 EUR
2550+ 0.57 EUR
Mindestbestellmenge: 850
VS-15ETH06STRR-M3 vs-15eth06s-m3-1-m3.pdf
VS-15ETH06STRR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+1.11 EUR
1600+ 0.9 EUR
Mindestbestellmenge: 800
UGB8DTHE3_A/I ug8xt.pdf
UGB8DTHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
UGB8DTHE3_A/P ug8xt.pdf
UGB8DTHE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tube
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SE8D20J-M3/I se8d20d_g_j.pdf
SE8D20J-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SE8D20J-M3/I se8d20d_g_j.pdf
SE8D20J-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
31+ 0.58 EUR
100+ 0.35 EUR
500+ 0.32 EUR
1000+ 0.22 EUR
2000+ 0.2 EUR
5000+ 0.19 EUR
Mindestbestellmenge: 24
SE8D20GHM3/I se8d20d_g_j.pdf
SE8D20GHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14000+0.2 EUR
Mindestbestellmenge: 14000
SE8D20GHM3/I se8d20d_g_j.pdf
SE8D20GHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.84 EUR
27+ 0.66 EUR
100+ 0.39 EUR
500+ 0.37 EUR
1000+ 0.25 EUR
2000+ 0.23 EUR
5000+ 0.22 EUR
Mindestbestellmenge: 21
SE8D20JHM3/I se8d20d_g_j.pdf
SE8D20JHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14000+0.2 EUR
Mindestbestellmenge: 14000
SE8D20JHM3/I se8d20d_g_j.pdf
SE8D20JHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.84 EUR
27+ 0.66 EUR
100+ 0.39 EUR
500+ 0.37 EUR
1000+ 0.25 EUR
2000+ 0.23 EUR
5000+ 0.22 EUR
Mindestbestellmenge: 21
SE8D20G-M3/I se8d20d_g_j.pdf
SE8D20G-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SE8D20G-M3/I se8d20d_g_j.pdf
SE8D20G-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 13930 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
31+ 0.58 EUR
100+ 0.35 EUR
500+ 0.32 EUR
1000+ 0.22 EUR
2000+ 0.2 EUR
5000+ 0.19 EUR
Mindestbestellmenge: 24
ZPY18-TR zpy3v9.pdf
ZPY18-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 1.3W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 14 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.1 EUR
10000+ 0.087 EUR
Mindestbestellmenge: 5000
ZPY18-TR zpy3v9.pdf
ZPY18-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 1.3W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 14 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 24819 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
44+ 0.41 EUR
100+ 0.21 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
2000+ 0.1 EUR
Mindestbestellmenge: 31
BZT03C22-TR bzt03.pdf
BZT03C22-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 31VC SOD57
Packaging: Tape & Reel (TR)
Tolerance: ±5.68%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.4 EUR
10000+ 0.37 EUR
Mindestbestellmenge: 5000
BZT03C22-TR bzt03.pdf
BZT03C22-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 31VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±5.68%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
auf Bestellung 21707 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.11 EUR
19+ 0.97 EUR
100+ 0.67 EUR
500+ 0.56 EUR
1000+ 0.48 EUR
2000+ 0.43 EUR
Mindestbestellmenge: 16
SMCJ43AHM3_A/H smcj.pdf
SMCJ43AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMCJ43AHM3_A/I smcj.pdf
SMCJ43AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMCJ43AHE3_A/H smcj.pdf
SMCJ43AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 21.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMCJ43AHE3_A/I smcj.pdf
SMCJ43AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 21.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ14CAHM3_A/I smaj50a.pdf
SMAJ14CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
P4SMA39CAHE3_A/I p4sma.pdf
P4SMA39CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
P4SMA39CAHE3_A/I p4sma.pdf
P4SMA39CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7038 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
29+ 0.63 EUR
100+ 0.43 EUR
500+ 0.34 EUR
1000+ 0.28 EUR
2000+ 0.25 EUR
Mindestbestellmenge: 24
P4SMA39CAHM3_A/H p4sma.pdf
P4SMA39CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
P4SMA39CAHM3_A/I p4sma.pdf
P4SMA39CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
P4SMA27CAHE3_A/H p4sma.pdf
P4SMA27CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 10.7A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1800+0.22 EUR
3600+ 0.2 EUR
Mindestbestellmenge: 1800
P4SMA27CAHE3_A/H p4sma.pdf
P4SMA27CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 10.7A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
31+ 0.58 EUR
100+ 0.35 EUR
500+ 0.32 EUR
Mindestbestellmenge: 24
SMBJ16CAHE3_B/H smbj.pdf
SMBJ16CAHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,16V 5%,BIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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