Produkte > TAIWAN SEMICONDUCTOR > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR (63597) > Seite 1058 nach 1060
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
B0520LW RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 20V; 0.5A; SOD123 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 20V Load current: 0.5A Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 0.385V Max. forward impulse current: 5.5A |
auf Bestellung 1145 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
TSS0230LU RGG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 35V; 0.2A; 0603B Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 35V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Case: 0603B Max. forward impulse current: 1A |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
P6SMB13CA M4G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 600W; 13V; 34A; bidirectional; ±5%; SMB; reel,tape Leakage current: 1µA Max. forward impulse current: 34A Semiconductor structure: bidirectional Max. off-state voltage: 11.1V Kind of package: reel; tape Type of diode: TVS Tolerance: ±5% Case: SMB Mounting: SMD Breakdown voltage: 13V Peak pulse power dissipation: 0.6kW |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
BZS55C2V7 RXG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 2.7V; 5mA; SMD; reel,tape; 1206; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: 1206 Semiconductor structure: single diode Leakage current: 10µA |
auf Bestellung 610 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
BZV55B12 L1 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; MiniMELF glass Mounting: SMD Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener Case: MiniMELF glass Tolerance: ±2% Semiconductor structure: single diode Zener voltage: 12V Zener current: 5mA Leakage current: 0.1µA |
auf Bestellung 473 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
BZV55B12 L1G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; MiniMELF glass Mounting: SMD Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener Case: MiniMELF glass Tolerance: ±2% Semiconductor structure: single diode Zener voltage: 12V Zener current: 5mA Leakage current: 0.1µA |
auf Bestellung 630 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
SMBJ20CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 600W; 22.2÷24.5V; 19.4A; bidirectional; ±5%; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 19.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 2996 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
SS19L R2 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 90V; 1A; subSMA; reel,tape Case: subSMA Mounting: SMD Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 90V Max. forward voltage: 0.8V |
Produkt ist nicht verfügbar |
|||||||||||||
SMA4S60AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 67.1÷74.1V; 4.1A; unidirectional; ±5%; SOD128 Type of diode: TVS Mounting: SMD Max. off-state voltage: 60V Semiconductor structure: unidirectional Case: SOD128 Leakage current: 1µA Max. forward impulse current: 4.1A Kind of package: reel; tape Breakdown voltage: 67.1...74.1V Peak pulse power dissipation: 0.4kW Tolerance: ±5% |
Produkt ist nicht verfügbar |
||||||||||||||
TSM3N80CH C5G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.83A Power dissipation: 94W Case: IPAK Gate-source voltage: ±30V On-state resistance: 4.2Ω Mounting: THT Gate charge: 19nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
TSM3N80CI C0G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.83A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 4.2Ω Mounting: THT Gate charge: 19nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||||
TSM3N80CP ROG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.83A Power dissipation: 94W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.2Ω Mounting: SMD Gate charge: 19nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||
TSM3N80CZ C0G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.83A Power dissipation: 94W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 4.2Ω Mounting: THT Gate charge: 19nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
TSM180P03CS RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -6.3A; 2.5W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -6.3A Power dissipation: 2.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 14.6nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||||
TSM7P06CP ROG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; 15.6W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.4A Power dissipation: 15.6W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 8.2nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
SR310 R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Case: DO201AD Kind of package: tape Max. forward impulse current: 80A Max. forward voltage: 0.85V |
auf Bestellung 76 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
BZX85C6V2 R0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 1.3W; 6.2V; 35mA; reel,tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 6.2V Zener current: 35mA Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
auf Bestellung 370 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
RABS20M M3G | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS Max. forward impulse current: 50A Case: ABS Kind of package: reel; tape Electrical mounting: SMT Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Max. forward voltage: 1.16V Load current: 2A |
auf Bestellung 76 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
TS2937CM33 RNG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; D2PAK; SMD Operating temperature: -40...125°C Manufacturer series: TS2937 Mounting: SMD Input voltage: 4.3...26V Kind of voltage regulator: fixed; LDO; linear Case: D2PAK Tolerance: ±2% Output voltage: 3.3V Output current: 0.5A Voltage drop: 0.7V Type of integrated circuit: voltage regulator Number of channels: 1 |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
TS2937CM50 RNG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; D2PAK; SMD; ±2% Operating temperature: -40...125°C Manufacturer series: TS2937 Mounting: SMD Input voltage: 6...26V Kind of voltage regulator: fixed; LDO; linear Case: D2PAK Tolerance: ±2% Output voltage: 5V Output current: 0.5A Voltage drop: 0.7V Type of integrated circuit: voltage regulator Number of channels: 1 |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
TS2937CP33 R0G | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.6V Output voltage: 3.3V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: TS2937 Operating temperature: -40...125°C Tolerance: ±0.2% Number of channels: 1 Input voltage: 4.3...26V |
auf Bestellung 124 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
TS2937CW33 RPG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SOT223; SMD Operating temperature: -40...125°C Manufacturer series: TS2937 Mounting: SMD Input voltage: 4.3...26V Kind of voltage regulator: fixed; LDO; linear Case: SOT223 Tolerance: ±2% Output voltage: 3.3V Output current: 0.5A Voltage drop: 0.7V Type of integrated circuit: voltage regulator Number of channels: 1 |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
TS2937CW50 RPG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SOT223; SMD Operating temperature: -40...125°C Manufacturer series: TS2937 Mounting: SMD Input voltage: 6...26V Kind of voltage regulator: fixed; LDO; linear Case: SOT223 Tolerance: ±2% Output voltage: 5V Output current: 0.5A Voltage drop: 0.7V Type of integrated circuit: voltage regulator Number of channels: 1 |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
TS2937CZ33 C0G | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO220; THT Operating temperature: -40...125°C Manufacturer series: TS2937 Mounting: THT Input voltage: 4.3...26V Kind of voltage regulator: fixed; LDO; linear Case: TO220 Tolerance: ±2% Output voltage: 3.3V Output current: 0.5A Voltage drop: 0.7V Type of integrated circuit: voltage regulator Number of channels: 1 |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
TS2937CZ50 C0G | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; TO220; THT; ±2% Operating temperature: -40...125°C Manufacturer series: TS2937 Mounting: THT Input voltage: 6...26V Kind of voltage regulator: fixed; LDO; linear Case: TO220 Tolerance: ±2% Output voltage: 5V Output current: 0.5A Voltage drop: 0.7V Type of integrated circuit: voltage regulator Number of channels: 1 |
Produkt ist nicht verfügbar |
|||||||||||||
![]() +1 |
TSS42U RG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 0603; reel,tape; 150mW Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Case: 0603 Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Power dissipation: 0.15W |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
TSZU52C13 RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.15W; 13V; 5mA; SMD; reel,tape; 0603; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 13V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: 0603 Semiconductor structure: single diode Leakage current: 0.1µA |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
ABS2 RGG | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; 200V; If: 1A; Ifsm: 30A; ABS; SMT Electrical mounting: SMT Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 1A Max. forward impulse current: 30A Case: ABS Kind of package: reel; tape |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||
![]() |
S1M M2G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 1.5µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 12pF Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
TSM1NB60CH C5G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.7A Power dissipation: 39W Case: IPAK Gate-source voltage: ±30V On-state resistance: 10Ω Mounting: THT Gate charge: 6.1nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
TSM1NB60CP ROG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.7A Power dissipation: 39W Case: DPAK Gate-source voltage: ±30V On-state resistance: 10Ω Mounting: SMD Gate charge: 6.1nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||||
TSM1NB60CW RPG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.7A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 10Ω Mounting: SMD Gate charge: 6.1nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||
TS2596CM533 RNG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 3.3VDC; 3A; D2PAK-5 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.5...40V DC Output voltage: 3.3V DC Output current: 3A Case: D2PAK-5 Mounting: SMD Frequency: 127...173kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
BZT52B10-G RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.41W; 10V; 5mA; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.41W Zener voltage: 10V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 0.2µA |
auf Bestellung 815 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
BZT52B12-G RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.41W; 12V; 5mA; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.41W Zener voltage: 12V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 2375 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
BZT52B12S RRG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.2W; 12V; 5mA; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 12V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Leakage current: 90nA |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
BZT52B13-G RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.41W; 13V; 5mA; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.41W Zener voltage: 13V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 5895 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
BZT52B15-G RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.41W; 15V; 5mA; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.41W Zener voltage: 15V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 610 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
BZT52B15S RRG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.2W; 15V; 5mA; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Leakage current: 45nA |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
BZT52B20-G RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.41W; 20V; 5mA; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.41W Zener voltage: 20V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 5285 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
BZT52B24-G RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.41W; 24V; 5mA; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.41W Zener voltage: 24V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 5640 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
P6SMB18A R5G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 600W; 18V; 25A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 25A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
P6SMB18A M4G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 600W; 18V; 25A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 25A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
BZX84C7V5 RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.3W; 7.5V; 5mA; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 7.5V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 1µA |
auf Bestellung 975 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
SS25 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 50V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 2A Semiconductor structure: single diode Case: SMB Kind of package: reel; tape |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
P6SMB62CA M4G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 600W; 62V; 7.4A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 53V Breakdown voltage: 62V Max. forward impulse current: 7.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
P6SMB62CA R5G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 600W; 62V; 7.4A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 53V Breakdown voltage: 62V Max. forward impulse current: 7.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
P6SMB62CAHM4G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 600W; 62V; 7.4A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 53V Breakdown voltage: 62V Max. forward impulse current: 7.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
P4SMA36A M2G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; DO214AC; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 8.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
GBU606 | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() ![]() ![]() Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
YBS2206G RAG | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2.2A; Ifsm: 90A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 2.2A Max. forward impulse current: 90A Case: YBS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 0.95V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
TSM160P02CS RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 2.5W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -7A Power dissipation: 2.5W Case: SOP8 Gate-source voltage: ±10V On-state resistance: 16mΩ Mounting: SMD Gate charge: 27nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
BZT52C3V9 RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 3.9V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 2.7µA |
auf Bestellung 740 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
TS4264CW50 RPG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.5V Output voltage: 5V Output current: 0.1A Case: SOT223 Mounting: SMD Operating temperature: -40...150°C Tolerance: ±2% Number of channels: 1 Input voltage: 5.5...45V |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
TS4264GCW50 RPG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.5V Output voltage: 5V Output current: 0.1A Case: SOT223 Mounting: SMD Operating temperature: -40...150°C Tolerance: ±3% Number of channels: 1 Input voltage: 5.5...45V |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
BZV55B3V0 L1G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; MiniMELF glass; Ir: 4uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: MiniMELF glass Semiconductor structure: single diode Leakage current: 4µA |
auf Bestellung 740 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
BZV55B3V6 L1G | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; MiniMELF glass Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: MiniMELF glass Semiconductor structure: single diode Leakage current: 2µA |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
TSC966CW RPG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 400V; 0.3A; 1W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.3A Power dissipation: 1W Case: SOT223 Pulsed collector current: 1A Current gain: 90...300 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
||||||||||||||
TSM650N15CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 19W; PDFN56 Drain-source voltage: 150V Drain current: 4A On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 19W Polarisation: unipolar Gate charge: 36nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PDFN56 |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
TSM650N15CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 2.5W; SOP8 Drain-source voltage: 150V Drain current: 4A On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Gate charge: 37nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SOP8 |
Produkt ist nicht verfügbar |
B0520LW RHG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 0.5A; SOD123
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 0.385V
Max. forward impulse current: 5.5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 0.5A; SOD123
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 0.385V
Max. forward impulse current: 5.5A
auf Bestellung 1145 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
385+ | 0.19 EUR |
397+ | 0.18 EUR |
447+ | 0.16 EUR |
491+ | 0.15 EUR |
521+ | 0.14 EUR |
TSS0230LU RGG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 35V; 0.2A; 0603B
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: 0603B
Max. forward impulse current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 35V; 0.2A; 0603B
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: 0603B
Max. forward impulse current: 1A
Produkt ist nicht verfügbar
P6SMB13CA M4G |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 34A; bidirectional; ±5%; SMB; reel,tape
Leakage current: 1µA
Max. forward impulse current: 34A
Semiconductor structure: bidirectional
Max. off-state voltage: 11.1V
Kind of package: reel; tape
Type of diode: TVS
Tolerance: ±5%
Case: SMB
Mounting: SMD
Breakdown voltage: 13V
Peak pulse power dissipation: 0.6kW
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 34A; bidirectional; ±5%; SMB; reel,tape
Leakage current: 1µA
Max. forward impulse current: 34A
Semiconductor structure: bidirectional
Max. off-state voltage: 11.1V
Kind of package: reel; tape
Type of diode: TVS
Tolerance: ±5%
Case: SMB
Mounting: SMD
Breakdown voltage: 13V
Peak pulse power dissipation: 0.6kW
Produkt ist nicht verfügbar
BZS55C2V7 RXG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 10µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 10µA
auf Bestellung 610 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
610+ | 0.12 EUR |
BZV55B12 L1 |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; MiniMELF glass
Mounting: SMD
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Case: MiniMELF glass
Tolerance: ±2%
Semiconductor structure: single diode
Zener voltage: 12V
Zener current: 5mA
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; MiniMELF glass
Mounting: SMD
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Case: MiniMELF glass
Tolerance: ±2%
Semiconductor structure: single diode
Zener voltage: 12V
Zener current: 5mA
Leakage current: 0.1µA
auf Bestellung 473 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
473+ | 0.16 EUR |
BZV55B12 L1G |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; MiniMELF glass
Mounting: SMD
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Case: MiniMELF glass
Tolerance: ±2%
Semiconductor structure: single diode
Zener voltage: 12V
Zener current: 5mA
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; MiniMELF glass
Mounting: SMD
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Case: MiniMELF glass
Tolerance: ±2%
Semiconductor structure: single diode
Zener voltage: 12V
Zener current: 5mA
Leakage current: 0.1µA
auf Bestellung 630 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
630+ | 0.11 EUR |
SMBJ20CA |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22.2÷24.5V; 19.4A; bidirectional; ±5%; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 19.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22.2÷24.5V; 19.4A; bidirectional; ±5%; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 19.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 2996 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
209+ | 0.34 EUR |
253+ | 0.28 EUR |
410+ | 0.17 EUR |
435+ | 0.16 EUR |
SS19L R2 |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 90V; 1A; subSMA; reel,tape
Case: subSMA
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 90V
Max. forward voltage: 0.8V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 90V; 1A; subSMA; reel,tape
Case: subSMA
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 90V
Max. forward voltage: 0.8V
Produkt ist nicht verfügbar
SMA4S60AH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 67.1÷74.1V; 4.1A; unidirectional; ±5%; SOD128
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 60V
Semiconductor structure: unidirectional
Case: SOD128
Leakage current: 1µA
Max. forward impulse current: 4.1A
Kind of package: reel; tape
Breakdown voltage: 67.1...74.1V
Peak pulse power dissipation: 0.4kW
Tolerance: ±5%
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 67.1÷74.1V; 4.1A; unidirectional; ±5%; SOD128
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 60V
Semiconductor structure: unidirectional
Case: SOD128
Leakage current: 1µA
Max. forward impulse current: 4.1A
Kind of package: reel; tape
Breakdown voltage: 67.1...74.1V
Peak pulse power dissipation: 0.4kW
Tolerance: ±5%
Produkt ist nicht verfügbar
TSM3N80CH C5G |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Power dissipation: 94W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: THT
Gate charge: 19nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Power dissipation: 94W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: THT
Gate charge: 19nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
TSM3N80CI C0G |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: THT
Gate charge: 19nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: THT
Gate charge: 19nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
TSM3N80CP ROG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Power dissipation: 94W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Power dissipation: 94W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
TSM3N80CZ C0G |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Power dissipation: 94W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: THT
Gate charge: 19nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Power dissipation: 94W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: THT
Gate charge: 19nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
TSM180P03CS RLG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.3A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.3A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.6nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.3A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.3A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.6nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
TSM7P06CP ROG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; 15.6W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.4A
Power dissipation: 15.6W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; 15.6W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.4A
Power dissipation: 15.6W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
SR310 R0 |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Kind of package: tape
Max. forward impulse current: 80A
Max. forward voltage: 0.85V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Kind of package: tape
Max. forward impulse current: 80A
Max. forward voltage: 0.85V
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
76+ | 0.94 EUR |
BZX85C6V2 R0G |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.2V; 35mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.2V
Zener current: 35mA
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.2V; 35mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.2V
Zener current: 35mA
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
370+ | 0.2 EUR |
RABS20M M3G |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Max. forward impulse current: 50A
Case: ABS
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.16V
Load current: 2A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Max. forward impulse current: 50A
Case: ABS
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.16V
Load current: 2A
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
76+ | 0.94 EUR |
TS2937CM33 RNG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; D2PAK; SMD
Operating temperature: -40...125°C
Manufacturer series: TS2937
Mounting: SMD
Input voltage: 4.3...26V
Kind of voltage regulator: fixed; LDO; linear
Case: D2PAK
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.5A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; D2PAK; SMD
Operating temperature: -40...125°C
Manufacturer series: TS2937
Mounting: SMD
Input voltage: 4.3...26V
Kind of voltage regulator: fixed; LDO; linear
Case: D2PAK
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.5A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
Produkt ist nicht verfügbar
TS2937CM50 RNG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; D2PAK; SMD; ±2%
Operating temperature: -40...125°C
Manufacturer series: TS2937
Mounting: SMD
Input voltage: 6...26V
Kind of voltage regulator: fixed; LDO; linear
Case: D2PAK
Tolerance: ±2%
Output voltage: 5V
Output current: 0.5A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; D2PAK; SMD; ±2%
Operating temperature: -40...125°C
Manufacturer series: TS2937
Mounting: SMD
Input voltage: 6...26V
Kind of voltage regulator: fixed; LDO; linear
Case: D2PAK
Tolerance: ±2%
Output voltage: 5V
Output current: 0.5A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
Produkt ist nicht verfügbar
TS2937CP33 R0G |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: TS2937
Operating temperature: -40...125°C
Tolerance: ±0.2%
Number of channels: 1
Input voltage: 4.3...26V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: TS2937
Operating temperature: -40...125°C
Tolerance: ±0.2%
Number of channels: 1
Input voltage: 4.3...26V
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 1.46 EUR |
56+ | 1.29 EUR |
72+ | 1 EUR |
76+ | 0.94 EUR |
TS2937CW33 RPG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SOT223; SMD
Operating temperature: -40...125°C
Manufacturer series: TS2937
Mounting: SMD
Input voltage: 4.3...26V
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.5A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SOT223; SMD
Operating temperature: -40...125°C
Manufacturer series: TS2937
Mounting: SMD
Input voltage: 4.3...26V
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.5A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
Produkt ist nicht verfügbar
TS2937CW50 RPG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SOT223; SMD
Operating temperature: -40...125°C
Manufacturer series: TS2937
Mounting: SMD
Input voltage: 6...26V
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Tolerance: ±2%
Output voltage: 5V
Output current: 0.5A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SOT223; SMD
Operating temperature: -40...125°C
Manufacturer series: TS2937
Mounting: SMD
Input voltage: 6...26V
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Tolerance: ±2%
Output voltage: 5V
Output current: 0.5A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
Produkt ist nicht verfügbar
TS2937CZ33 C0G |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO220; THT
Operating temperature: -40...125°C
Manufacturer series: TS2937
Mounting: THT
Input voltage: 4.3...26V
Kind of voltage regulator: fixed; LDO; linear
Case: TO220
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.5A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO220; THT
Operating temperature: -40...125°C
Manufacturer series: TS2937
Mounting: THT
Input voltage: 4.3...26V
Kind of voltage regulator: fixed; LDO; linear
Case: TO220
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.5A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
Produkt ist nicht verfügbar
TS2937CZ50 C0G |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; TO220; THT; ±2%
Operating temperature: -40...125°C
Manufacturer series: TS2937
Mounting: THT
Input voltage: 6...26V
Kind of voltage regulator: fixed; LDO; linear
Case: TO220
Tolerance: ±2%
Output voltage: 5V
Output current: 0.5A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; TO220; THT; ±2%
Operating temperature: -40...125°C
Manufacturer series: TS2937
Mounting: THT
Input voltage: 6...26V
Kind of voltage regulator: fixed; LDO; linear
Case: TO220
Tolerance: ±2%
Output voltage: 5V
Output current: 0.5A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
Produkt ist nicht verfügbar
TSS42U RG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 0603; reel,tape; 150mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: 0603
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.15W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 0603; reel,tape; 150mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: 0603
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.15W
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
391+ | 0.18 EUR |
618+ | 0.12 EUR |
807+ | 0.089 EUR |
863+ | 0.083 EUR |
TSZU52C13 RGG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 13V; 5mA; SMD; reel,tape; 0603; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 13V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 0603
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 13V; 5mA; SMD; reel,tape; 0603; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 13V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 0603
Semiconductor structure: single diode
Leakage current: 0.1µA
Produkt ist nicht verfügbar
ABS2 RGG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 1A; Ifsm: 30A; ABS; SMT
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1A
Max. forward impulse current: 30A
Case: ABS
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 1A; Ifsm: 30A; ABS; SMT
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1A
Max. forward impulse current: 30A
Case: ABS
Kind of package: reel; tape
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)S1M M2G |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 5.11 EUR |
TSM1NB60CH C5G |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: THT
Gate charge: 6.1nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: THT
Gate charge: 6.1nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
TSM1NB60CP ROG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
TSM1NB60CW RPG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
TS2596CM533 RNG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 3.3VDC; 3A; D2PAK-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 3.3V DC
Output current: 3A
Case: D2PAK-5
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 3.3VDC; 3A; D2PAK-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 3.3V DC
Output current: 3A
Case: D2PAK-5
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
BZT52B10-G RHG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 10V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 10V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.2µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 10V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 10V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.2µA
auf Bestellung 815 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
375+ | 0.19 EUR |
680+ | 0.11 EUR |
815+ | 0.087 EUR |
BZT52B12-G RHG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 12V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 12V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 12V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 12V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 2375 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
355+ | 0.2 EUR |
645+ | 0.11 EUR |
810+ | 0.089 EUR |
895+ | 0.08 EUR |
950+ | 0.076 EUR |
BZT52B12S RRG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 90nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 90nA
Produkt ist nicht verfügbar
BZT52B13-G RHG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 13V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 13V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 13V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 13V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 5895 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
355+ | 0.2 EUR |
645+ | 0.11 EUR |
810+ | 0.089 EUR |
895+ | 0.08 EUR |
950+ | 0.076 EUR |
3000+ | 0.074 EUR |
BZT52B15-G RHG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 15V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 15V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 610 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
350+ | 0.21 EUR |
610+ | 0.12 EUR |
BZT52B15S RRG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Produkt ist nicht verfügbar
BZT52B20-G RHG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 20V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 20V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 20V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 20V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 5285 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
355+ | 0.2 EUR |
645+ | 0.11 EUR |
810+ | 0.089 EUR |
905+ | 0.079 EUR |
960+ | 0.075 EUR |
3000+ | 0.074 EUR |
BZT52B24-G RHG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 24V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 24V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 24V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 24V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 5640 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
355+ | 0.2 EUR |
645+ | 0.11 EUR |
810+ | 0.089 EUR |
905+ | 0.079 EUR |
960+ | 0.075 EUR |
3000+ | 0.074 EUR |
P6SMB18A R5G |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 25A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 25A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
P6SMB18A M4G |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 25A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 25A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
BZX84C7V5 RFG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 975 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
575+ | 0.12 EUR |
930+ | 0.077 EUR |
975+ | 0.073 EUR |
SS25 |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Produkt ist nicht verfügbar
P6SMB62CA M4G |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
P6SMB62CA R5G |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
P6SMB62CAHM4G |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
P4SMA36A M2G |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; DO214AC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 8.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; DO214AC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 8.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
GBU606 |
![]() ![]() ![]() ![]() ![]() ![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 2.1 EUR |
YBS2206G RAG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2.2A; Ifsm: 90A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2.2A
Max. forward impulse current: 90A
Case: YBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2.2A; Ifsm: 90A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2.2A
Max. forward impulse current: 90A
Case: YBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
TSM160P02CS RLG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±10V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±10V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
BZT52C3V9 RHG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
auf Bestellung 740 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
740+ | 0.097 EUR |
TS4264CW50 RPG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.1A
Case: SOT223
Mounting: SMD
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.5...45V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.1A
Case: SOT223
Mounting: SMD
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
TS4264GCW50 RPG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.1A
Case: SOT223
Mounting: SMD
Operating temperature: -40...150°C
Tolerance: ±3%
Number of channels: 1
Input voltage: 5.5...45V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.1A
Case: SOT223
Mounting: SMD
Operating temperature: -40...150°C
Tolerance: ±3%
Number of channels: 1
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
BZV55B3V0 L1G |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; MiniMELF glass; Ir: 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 4µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; MiniMELF glass; Ir: 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 4µA
auf Bestellung 740 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
740+ | 0.097 EUR |
BZV55B3V6 L1G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 2µA
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
90+ | 0.8 EUR |
TSC966CW RPG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 1W
Case: SOT223
Pulsed collector current: 1A
Current gain: 90...300
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 1W
Case: SOT223
Pulsed collector current: 1A
Current gain: 90...300
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
TSM650N15CR RLG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 19W; PDFN56
Drain-source voltage: 150V
Drain current: 4A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 19W; PDFN56
Drain-source voltage: 150V
Drain current: 4A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56
Produkt ist nicht verfügbar
TSM650N15CS RLG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 2.5W; SOP8
Drain-source voltage: 150V
Drain current: 4A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOP8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 2.5W; SOP8
Drain-source voltage: 150V
Drain current: 4A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOP8
Produkt ist nicht verfügbar