Produkte > TAIWAN SEMICONDUCTOR > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR (63108) > Seite 1052 nach 1052
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TSM60NB260CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 32.1W; TO220FP Drain-source voltage: 600V Drain current: 7.8A On-state resistance: 0.26Ω Type of transistor: N-MOSFET Power dissipation: 32.1W Polarisation: unipolar Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±30V Mounting: THT Case: TO220FP |
Produkt ist nicht verfügbar |
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P6SMB18CA M4G | TAIWAN SEMICONDUCTOR |
 Category: Bidirectional SMD transil diodesDescription: Diode: TVS; 600W; 18V; 25A; bidirectional; ±5%; SMB; reel,tape Max. off-state voltage: 15.3V Case: SMB Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 25A Semiconductor structure: bidirectional Breakdown voltage: 18V Leakage current: 1µA Type of diode: TVS Peak pulse power dissipation: 0.6kW Tolerance: ±5% |
auf Bestellung 110 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB18CA R5G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 18V; 25A; bidirectional; ±5%; SMB; reel,tape Max. off-state voltage: 15.3V Case: SMB Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 25A Semiconductor structure: bidirectional Breakdown voltage: 18V Leakage current: 1µA Type of diode: TVS Peak pulse power dissipation: 0.6kW Tolerance: ±5% |
Produkt ist nicht verfügbar |
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P4SMA18CA M2G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 18V; 16.5A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 16.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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P6SMB120CAHM4G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 120V; 3.8A; bidirectional; ±5%; SMB; reel,tape Mounting: SMD Case: SMB Tolerance: ±5% Breakdown voltage: 120V Max. off-state voltage: 102V Semiconductor structure: bidirectional Max. forward impulse current: 3.8A Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 0.6kW |
Produkt ist nicht verfügbar |
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RSFKL R2G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 0.5A; 500ns; subSMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 0.5A Reverse recovery time: 0.5µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 4pF Case: subSMA Max. forward voltage: 1.3V Max. forward impulse current: 10A Kind of package: reel; tape |
auf Bestellung 6945 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM4NB60CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.4A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 14.5nC Kind of channel: enhanced |
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TSM4NB65CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2.4A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.4A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 3.37Ω Mounting: THT Gate charge: 13.46nC Kind of channel: enhanced |
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TSM80N1R2CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.4A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.4A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Gate charge: 19.4nC Kind of channel: enhanced |
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TSM80N950CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.8A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 19.6nC Kind of channel: enhanced |
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P6SMB24AHM4G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 24V; 19A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 19A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| TLD8S26AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 6.6kW; 28.9÷31.9V; 157A; unidirectional; ±5%; DO218AB Leakage current: 10µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 6.6kW Mounting: SMD Case: DO218AB Tolerance: ±5% Max. off-state voltage: 26V Semiconductor structure: unidirectional Max. forward impulse current: 157A Breakdown voltage: 28.9...31.9V |
Produkt ist nicht verfügbar |
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LL5817 L0 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 1A; MELF plastic; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Case: MELF plastic Kind of package: reel; tape Max. forward impulse current: 25A |
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SMBJ12A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 13.3÷14.7V; 31A; unidirectional; ±5%; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 31A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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P6SMB20AHR5G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 20V; 22A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 17.1V Breakdown voltage: 20V Max. forward impulse current: 22A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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TS358CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; SOP8; ±1.5÷16VDC,3÷32VDC Mounting: SMT Number of channels: 2 Operating temperature: 0...70°C Type of integrated circuit: operational amplifier Bandwidth: 1MHz Input offset voltage: 9mV Kind of package: reel; tape Slew rate: 0.4V/μs Input offset current: 150nA Input bias current: 0.5µA Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: SOP8 |
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MBR1045 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 20A; TO220AC Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Forward voltage at If: 840mV Load current: 20A Case: TO220AC |
Produkt ist nicht verfügbar |
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| TQM250NB06CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 23W; PDFN56U Case: PDFN56U Mounting: SMD Power dissipation: 23W Polarisation: unipolar Gate charge: 24nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 7A On-state resistance: 50mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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TSM9409CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.5A; 2.1W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.5A Power dissipation: 2.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 155mΩ Mounting: SMD Gate charge: 6nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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P6SMB130CAHM4G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 130V; 3.5A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 111V Breakdown voltage: 130V Max. forward impulse current: 3.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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P6SMB12A M4G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 120V; 37A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10.2V Breakdown voltage: 120V Max. forward impulse current: 37A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| TSM300NB06CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6A; 19W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6A Power dissipation: 19W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 18nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| TSM300NB06DCR RLG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 6A; 8W; PDFN56 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 6A Power dissipation: 8W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 17nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SMA4S39AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 43.6÷48.2V; 6.3A; unidirectional; ±5%; SOD128 Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 39V Breakdown voltage: 43.6...48.2V Max. forward impulse current: 6.3A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD128 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| SS36 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; SMC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: SMC Max. forward impulse current: 70A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MBR1660 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 16A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 150A Max. forward voltage: 0.75V |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE16CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 16V; 67A; bidirectional; ±5%; DO201; 1.5kW; reel,tape Type of diode: TVS Max. off-state voltage: 13.6V Breakdown voltage: 16V Max. forward impulse current: 67A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 5µA Peak pulse power dissipation: 1.5kW Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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P6SMB15CA M4G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 15V; 28A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 28A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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P6SMB75CAHM4G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 75V; 6.1A; bidirectional; ±5%; SMB; reel,tape Mounting: SMD Max. off-state voltage: 64.1V Semiconductor structure: bidirectional Max. forward impulse current: 6.1A Breakdown voltage: 75V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Case: SMB Tolerance: ±5% |
Produkt ist nicht verfügbar |
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SMBJ15A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 16.7÷18.5V; 25.1A; unidirectional; ±5%; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 25.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 393 Stücke: Lieferzeit 14-21 Tag (e) |
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BZW06-33B R0 | TAIWAN SEMICONDUCTOR |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 39V; 11.1A; bidirectional; ±5%; DO204AC; 600W Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 11.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO204AC Mounting: THT Leakage current: 1µA |
auf Bestellung 580 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE91A | TAIWAN SEMICONDUCTOR |
 Category: Unidirectional THT transil diodesDescription: Diode: TVS; 1.5kW; 91V; 12A; unidirectional; ±5%; DO201; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 77.8V Breakdown voltage: 91V Max. forward impulse current: 12A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 5µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BZY55B12 RYG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; 0805; single diode Mounting: SMD Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener Case: 0805 Tolerance: ±2% Semiconductor structure: single diode Zener voltage: 12V Zener current: 5mA Leakage current: 0.1µA |
auf Bestellung 2075 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSD20H120CW MNG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 120V; 20A; D2PAK Mounting: SMD Type of diode: Schottky rectifying Case: D2PAK Max. off-state voltage: 120V Max. forward voltage: 0.87V Load current: 20A Semiconductor structure: common cathode; double Max. forward impulse current: 100A |
Produkt ist nicht verfügbar |
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| TSD20H150CW MNG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 150V; 20A; D2PAK Mounting: SMD Type of diode: Schottky rectifying Case: D2PAK Max. off-state voltage: 150V Max. forward voltage: 0.9V Load current: 20A Semiconductor structure: common cathode; double Max. forward impulse current: 100A |
Produkt ist nicht verfügbar |
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| TSD20H200CW MNG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 200V; 20A; D2PAK Mounting: SMD Type of diode: Schottky rectifying Case: D2PAK Max. off-state voltage: 200V Max. forward voltage: 0.93V Load current: 20A Semiconductor structure: common cathode; double Max. forward impulse current: 100A |
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P6SMB68A R4 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 68V; 6.8A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58.1V Breakdown voltage: 68V Max. forward impulse current: 6.8A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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P6SMB68A R5G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 68V; 6.8A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58.1V Breakdown voltage: 68V Max. forward impulse current: 6.8A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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P6SMB68A M4G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 68V; 6.8A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58.1V Breakdown voltage: 68V Max. forward impulse current: 6.8A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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P6SMB68AHM4G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 68V; 6.8A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58.1V Breakdown voltage: 68V Max. forward impulse current: 6.8A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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TSS42U RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 0603 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Case: 0603 Max. forward impulse current: 0.5A |
Produkt ist nicht verfügbar |
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| TSM110NB04CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 12A Power dissipation: 23W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 23nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| TSM110NB04DCR RLG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 10A; 9.6W; PDFN56 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 10A Power dissipation: 9.6W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 25nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| TSM110NB04LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 12A Power dissipation: 23W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 23nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SS26 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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| TSA874CW RPG | TAIWAN SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 500V; 0.15A; 1W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 500V Collector current: 0.15A Power dissipation: 1W Case: SOT223 Pulsed collector current: 0.5A Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
Produkt ist nicht verfügbar |
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TSA884CX RFG | TAIWAN SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 500V; 0.15A; 0.3W; SOT23-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 500V Collector current: 0.15A Power dissipation: 0.3W Case: SOT23-3 Pulsed collector current: 0.5A Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
Produkt ist nicht verfügbar |
| TSM60NB260CI C0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 32.1W; TO220FP
Drain-source voltage: 600V
Drain current: 7.8A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Power dissipation: 32.1W
Polarisation: unipolar
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 32.1W; TO220FP
Drain-source voltage: 600V
Drain current: 7.8A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Power dissipation: 32.1W
Polarisation: unipolar
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
| P6SMB18CA M4G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 25A; bidirectional; ±5%; SMB; reel,tape
Max. off-state voltage: 15.3V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 25A
Semiconductor structure: bidirectional
Breakdown voltage: 18V
Leakage current: 1µA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 25A; bidirectional; ±5%; SMB; reel,tape
Max. off-state voltage: 15.3V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 25A
Semiconductor structure: bidirectional
Breakdown voltage: 18V
Leakage current: 1µA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 110+ | 0.64 EUR |
| P6SMB18CA R5G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 25A; bidirectional; ±5%; SMB; reel,tape
Max. off-state voltage: 15.3V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 25A
Semiconductor structure: bidirectional
Breakdown voltage: 18V
Leakage current: 1µA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 25A; bidirectional; ±5%; SMB; reel,tape
Max. off-state voltage: 15.3V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 25A
Semiconductor structure: bidirectional
Breakdown voltage: 18V
Leakage current: 1µA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Produkt ist nicht verfügbar
| P4SMA18CA M2G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18V; 16.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 16.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18V; 16.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 16.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| P6SMB120CAHM4G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 120V; 3.8A; bidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Case: SMB
Tolerance: ±5%
Breakdown voltage: 120V
Max. off-state voltage: 102V
Semiconductor structure: bidirectional
Max. forward impulse current: 3.8A
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 120V; 3.8A; bidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Case: SMB
Tolerance: ±5%
Breakdown voltage: 120V
Max. off-state voltage: 102V
Semiconductor structure: bidirectional
Max. forward impulse current: 3.8A
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Produkt ist nicht verfügbar
| RSFKL R2G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.5A; 500ns; subSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 0.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 4pF
Case: subSMA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.5A; 500ns; subSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 0.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 4pF
Case: subSMA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Kind of package: reel; tape
auf Bestellung 6945 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 120+ | 0.6 EUR |
| 225+ | 0.32 EUR |
| 275+ | 0.26 EUR |
| 290+ | 0.25 EUR |
| 2500+ | 0.24 EUR |
| TSM4NB60CI C0G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 14.5nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 14.5nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM4NB65CI C0G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.4A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.4A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.37Ω
Mounting: THT
Gate charge: 13.46nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.4A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.4A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.37Ω
Mounting: THT
Gate charge: 13.46nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM80N1R2CI C0G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.4A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.4A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 19.4nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.4A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.4A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 19.4nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM80N950CI C0G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 19.6nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 19.6nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| P6SMB24AHM4G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24V; 19A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24V; 19A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| TLD8S26AH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 6.6kW; 28.9÷31.9V; 157A; unidirectional; ±5%; DO218AB
Leakage current: 10µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Mounting: SMD
Case: DO218AB
Tolerance: ±5%
Max. off-state voltage: 26V
Semiconductor structure: unidirectional
Max. forward impulse current: 157A
Breakdown voltage: 28.9...31.9V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 6.6kW; 28.9÷31.9V; 157A; unidirectional; ±5%; DO218AB
Leakage current: 10µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Mounting: SMD
Case: DO218AB
Tolerance: ±5%
Max. off-state voltage: 26V
Semiconductor structure: unidirectional
Max. forward impulse current: 157A
Breakdown voltage: 28.9...31.9V
Produkt ist nicht verfügbar
| LL5817 L0 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; MELF plastic; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: MELF plastic
Kind of package: reel; tape
Max. forward impulse current: 25A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; MELF plastic; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: MELF plastic
Kind of package: reel; tape
Max. forward impulse current: 25A
Produkt ist nicht verfügbar
| SMBJ12A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13.3÷14.7V; 31A; unidirectional; ±5%; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13.3÷14.7V; 31A; unidirectional; ±5%; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| P6SMB20AHR5G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 20V; 22A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17.1V
Breakdown voltage: 20V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 20V; 22A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17.1V
Breakdown voltage: 20V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| TS358CS RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SOP8; ±1.5÷16VDC,3÷32VDC
Mounting: SMT
Number of channels: 2
Operating temperature: 0...70°C
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Input offset voltage: 9mV
Kind of package: reel; tape
Slew rate: 0.4V/μs
Input offset current: 150nA
Input bias current: 0.5µA
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SOP8
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SOP8; ±1.5÷16VDC,3÷32VDC
Mounting: SMT
Number of channels: 2
Operating temperature: 0...70°C
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Input offset voltage: 9mV
Kind of package: reel; tape
Slew rate: 0.4V/μs
Input offset current: 150nA
Input bias current: 0.5µA
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SOP8
Produkt ist nicht verfügbar
| MBR1045 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Forward voltage at If: 840mV
Load current: 20A
Case: TO220AC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Forward voltage at If: 840mV
Load current: 20A
Case: TO220AC
Produkt ist nicht verfügbar
| TQM250NB06CR RLG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 23W; PDFN56U
Case: PDFN56U
Mounting: SMD
Power dissipation: 23W
Polarisation: unipolar
Gate charge: 24nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 7A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 23W; PDFN56U
Case: PDFN56U
Mounting: SMD
Power dissipation: 23W
Polarisation: unipolar
Gate charge: 24nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 7A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| TSM9409CS RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.5A; 2.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.5A
Power dissipation: 2.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 155mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.5A; 2.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.5A
Power dissipation: 2.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 155mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| P6SMB130CAHM4G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 130V; 3.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 111V
Breakdown voltage: 130V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 130V; 3.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 111V
Breakdown voltage: 130V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| P6SMB12A M4G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 120V; 37A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10.2V
Breakdown voltage: 120V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 120V; 37A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10.2V
Breakdown voltage: 120V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| TSM300NB06CR RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM300NB06DCR RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6A; 8W; PDFN56
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Power dissipation: 8W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6A; 8W; PDFN56
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Power dissipation: 8W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SMA4S39AH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 43.6÷48.2V; 6.3A; unidirectional; ±5%; SOD128
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 39V
Breakdown voltage: 43.6...48.2V
Max. forward impulse current: 6.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD128
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 43.6÷48.2V; 6.3A; unidirectional; ±5%; SOD128
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 39V
Breakdown voltage: 43.6...48.2V
Max. forward impulse current: 6.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD128
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| SS36 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Max. forward impulse current: 70A
Kind of package: reel; tape
Produkt ist nicht verfügbar
| MBR1660 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.75V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.75V
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 50+ | 1.43 EUR |
| 1.5KE16CA |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 16V; 67A; bidirectional; ±5%; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 67A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 16V; 67A; bidirectional; ±5%; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 67A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Produkt ist nicht verfügbar
| P6SMB15CA M4G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15V; 28A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15V; 28A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| P6SMB75CAHM4G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 75V; 6.1A; bidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Max. off-state voltage: 64.1V
Semiconductor structure: bidirectional
Max. forward impulse current: 6.1A
Breakdown voltage: 75V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Case: SMB
Tolerance: ±5%
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 75V; 6.1A; bidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Max. off-state voltage: 64.1V
Semiconductor structure: bidirectional
Max. forward impulse current: 6.1A
Breakdown voltage: 75V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Case: SMB
Tolerance: ±5%
Produkt ist nicht verfügbar
| SMBJ15A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16.7÷18.5V; 25.1A; unidirectional; ±5%; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 25.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16.7÷18.5V; 25.1A; unidirectional; ±5%; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 25.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 393 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 239+ | 0.3 EUR |
| 321+ | 0.22 EUR |
| 393+ | 0.19 EUR |
| BZW06-33B R0 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 39V; 11.1A; bidirectional; ±5%; DO204AC; 600W
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO204AC
Mounting: THT
Leakage current: 1µA
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 39V; 11.1A; bidirectional; ±5%; DO204AC; 600W
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO204AC
Mounting: THT
Leakage current: 1µA
auf Bestellung 580 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 214+ | 0.33 EUR |
| 268+ | 0.27 EUR |
| 334+ | 0.21 EUR |
| 353+ | 0.2 EUR |
| 1.5KE91A | |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 91V; 12A; unidirectional; ±5%; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 77.8V
Breakdown voltage: 91V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 5µA
Kind of package: reel; tape
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 91V; 12A; unidirectional; ±5%; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 77.8V
Breakdown voltage: 91V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 5µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| BZY55B12 RYG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; 0805; single diode
Mounting: SMD
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Case: 0805
Tolerance: ±2%
Semiconductor structure: single diode
Zener voltage: 12V
Zener current: 5mA
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; 0805; single diode
Mounting: SMD
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Case: 0805
Tolerance: ±2%
Semiconductor structure: single diode
Zener voltage: 12V
Zener current: 5mA
Leakage current: 0.1µA
auf Bestellung 2075 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 865+ | 0.083 EUR |
| 1155+ | 0.062 EUR |
| 1455+ | 0.049 EUR |
| 1485+ | 0.048 EUR |
| 1545+ | 0.046 EUR |
| TSD20H120CW MNG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 120V; 20A; D2PAK
Mounting: SMD
Type of diode: Schottky rectifying
Case: D2PAK
Max. off-state voltage: 120V
Max. forward voltage: 0.87V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 120V; 20A; D2PAK
Mounting: SMD
Type of diode: Schottky rectifying
Case: D2PAK
Max. off-state voltage: 120V
Max. forward voltage: 0.87V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
| TSD20H150CW MNG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 20A; D2PAK
Mounting: SMD
Type of diode: Schottky rectifying
Case: D2PAK
Max. off-state voltage: 150V
Max. forward voltage: 0.9V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 20A; D2PAK
Mounting: SMD
Type of diode: Schottky rectifying
Case: D2PAK
Max. off-state voltage: 150V
Max. forward voltage: 0.9V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
| TSD20H200CW MNG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 20A; D2PAK
Mounting: SMD
Type of diode: Schottky rectifying
Case: D2PAK
Max. off-state voltage: 200V
Max. forward voltage: 0.93V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 20A; D2PAK
Mounting: SMD
Type of diode: Schottky rectifying
Case: D2PAK
Max. off-state voltage: 200V
Max. forward voltage: 0.93V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
| P6SMB68A R4 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 68V; 6.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 6.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 68V; 6.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 6.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| P6SMB68A R5G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 68V; 6.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 6.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 68V; 6.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 6.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| P6SMB68A M4G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 68V; 6.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 6.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 68V; 6.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 6.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| P6SMB68AHM4G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 68V; 6.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 6.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 68V; 6.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 6.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| TSS42U RGG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 0603
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Case: 0603
Max. forward impulse current: 0.5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 0603
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Case: 0603
Max. forward impulse current: 0.5A
Produkt ist nicht verfügbar
| TSM110NB04CR RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM110NB04DCR RLG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 10A; 9.6W; PDFN56
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Power dissipation: 9.6W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 10A; 9.6W; PDFN56
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Power dissipation: 9.6W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TSM110NB04LCR RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SS26 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| TSA874CW RPG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 500V; 0.15A; 1W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 1W
Case: SOT223
Pulsed collector current: 0.5A
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 500V; 0.15A; 1W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 1W
Case: SOT223
Pulsed collector current: 0.5A
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
| TSA884CX RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 500V; 0.15A; 0.3W; SOT23-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.3W
Case: SOT23-3
Pulsed collector current: 0.5A
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 500V; 0.15A; 0.3W; SOT23-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.3W
Case: SOT23-3
Pulsed collector current: 0.5A
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar