TSM300NB06DCR RLG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: MOSFET 2N-CH 60V 6A/25A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1079pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.71 EUR |
| 5000+ | 0.67 EUR |
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Technische Details TSM300NB06DCR RLG Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 6A/25A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), 40W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1079pF @ 30V, Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Part Status: Active.
Weitere Produktangebote TSM300NB06DCR RLG nach Preis ab 0.75 EUR bis 1.71 EUR
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TSM300NB06DCR RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 60V 6A/25A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 40W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1079pF @ 30V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active |
auf Bestellung 10052 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM300NB06DCR RLG | Hersteller : Taiwan Semiconductor |
MOSFET Dual N-Chan Pwr MOSFET 60V 25A 30mu |
auf Bestellung 4899 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM300NB06DCR RLG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 6A; 8W; PDFN56 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 6A Power dissipation: 8W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 17nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| TSM300NB06DCR RLG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 6A; 8W; PDFN56 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 6A Power dissipation: 8W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 17nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |