Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (23459) > Seite 204 nach 391
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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1N5400GH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| SMCJ33A R7 | Taiwan Semiconductor Corporation |
Description: TVS DIODE 1500W DO214AB SMC Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 29A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar |
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SA8.0CA R0G | Taiwan Semiconductor Corporation |
 Description: TVS DIODE 8VWM 13.6VC DO204AC |
Produkt ist nicht verfügbar |
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SA8.0A A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 8VWM 13.6VC DO204AC |
Produkt ist nicht verfügbar |
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SA8.0CAHA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 8VWM 13.6VC DO204AC |
Produkt ist nicht verfügbar |
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SA8.0A B0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 8VWM 13.6VC DO204AC |
Produkt ist nicht verfügbar |
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SA8.0CA A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 8VWM 13.6VC DO204AC |
Produkt ist nicht verfügbar |
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SA8.0AHA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 8VWM 13.6VC DO204AC |
Produkt ist nicht verfügbar |
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SA8.0AHB0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 8VWM 13.6VC DO204AC |
Produkt ist nicht verfügbar |
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SA8.0A R0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 8VWM 13.6VC DO204AC |
Produkt ist nicht verfügbar |
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SA8.0CA B0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 8VWM 13.6VC DO204AC |
Produkt ist nicht verfügbar |
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SA8.0CAHR0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 8VWM 13.6VC DO204AC |
Produkt ist nicht verfügbar |
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SA8.0AHR0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 8VWM 13.6VC DO204AC |
Produkt ist nicht verfügbar |
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SA8.0CAHB0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 8VWM 13.6VC DO204AC |
Produkt ist nicht verfügbar |
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SA8.0AH | Taiwan Semiconductor Corporation | Description: TVS 500W 9.4V 5% DO-15 |
Produkt ist nicht verfügbar |
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SA8.0CAH | Taiwan Semiconductor Corporation | Description: TVS 500W 9.4V 5% DO-15 |
Produkt ist nicht verfügbar |
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SMDJ30CAH | Taiwan Semiconductor Corporation | Description: TVS DIODE 30VWM 48.4VC DO214AB |
Produkt ist nicht verfügbar |
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| MUR8L60 | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUR8L60H | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSSE3U60HRVG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 3A SOD123HE |
Produkt ist nicht verfügbar |
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TSSE3U60HRVG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 3A SOD123HE |
auf Bestellung 530 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM3443CX6 RFG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 20V 4.7A SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V |
Produkt ist nicht verfügbar |
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TSM3443CX6 RFG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 20V 4.7A SOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V |
auf Bestellung 3077 Stücke: Lieferzeit 10-14 Tag (e) |
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FR203G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
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TSM130NB06LCR | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 60V 10A/51A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 30 V |
Produkt ist nicht verfügbar |
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ZM4753A L0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 36V 1W MELF |
Produkt ist nicht verfügbar |
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TLD8S14AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 23.2VC DO218AB |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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TLD8S14AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 23.2VC DO218AB |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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1.5SMC130A R6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
Produkt ist nicht verfügbar |
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1.5SMC130A R6 | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
Produkt ist nicht verfügbar |
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1.5SMC130A M6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
Produkt ist nicht verfügbar |
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1.5SMC130A R7G | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
Produkt ist nicht verfügbar |
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1.5SMC130A M6 | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
Produkt ist nicht verfügbar |
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1.5SMC130A R7 | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
Produkt ist nicht verfügbar |
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KBU602G | Taiwan Semiconductor Corporation | Description: DIODE BRIDGE 6A 100V KBU |
Produkt ist nicht verfügbar |
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SS26L RHG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A SUB SMA |
Produkt ist nicht verfügbar |
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SS26L MQG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A SUB SMA |
Produkt ist nicht verfügbar |
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SS26L MHG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A SUB SMA |
Produkt ist nicht verfügbar |
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SS26L RUG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A SUB SMA |
Produkt ist nicht verfügbar |
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SS26L R3G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A SUB SMA |
Produkt ist nicht verfügbar |
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SS26LHRUG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SS26LHMHG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A SUB SMA |
Produkt ist nicht verfügbar |
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SS26LHMQG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A SUB SMA |
Produkt ist nicht verfügbar |
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SS26LHM2G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A SUB SMA |
Produkt ist nicht verfügbar |
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SS26L M2G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A SUB SMA |
Produkt ist nicht verfügbar |
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SS26LHRQG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A SUB SMA |
Produkt ist nicht verfügbar |
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SS26LHRHG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A SUB SMA |
Produkt ist nicht verfügbar |
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SS26L RTG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A SUB SMA |
Produkt ist nicht verfügbar |
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SS26L RFG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A SUB SMA |
Produkt ist nicht verfügbar |
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SS26L MTG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A SUB SMA |
Produkt ist nicht verfügbar |
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SS26L RQG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A SUB SMA |
Produkt ist nicht verfügbar |
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SS26LHRTG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A SUB SMA |
Produkt ist nicht verfügbar |
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SS26LHRFG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A SUB SMA |
Produkt ist nicht verfügbar |
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SS26LHR3G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A SUB SMA |
Produkt ist nicht verfügbar |
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SS26LHMTG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A SUB SMA |
Produkt ist nicht verfügbar |
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BAS40 RFG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 200MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 5pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23 Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 200 nA @ 40 V |
Produkt ist nicht verfügbar |
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BAS40 RFG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 200MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 5pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23 Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 200 nA @ 40 V |
auf Bestellung 210 Stücke: Lieferzeit 10-14 Tag (e) |
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P4KE27CA A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 23.1VWM 37.5VC DO204AL |
Produkt ist nicht verfügbar |
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P4KE27CA R1G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 23.1VWM 37.5VC DO204AL |
Produkt ist nicht verfügbar |
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P4KE27A R1G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 23.1VWM 37.5VC DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11A Voltage - Reverse Standoff (Typ): 23.1V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 25.7V Voltage - Clamping (Max) @ Ipp: 37.5V Power - Peak Pulse: 400W Power Line Protection: No |
Produkt ist nicht verfügbar |
| 1N5400GH |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 50V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
| SMCJ33A R7 |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 29A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 29A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
| SA8.0CA R0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AC
Description: TVS DIODE 8VWM 13.6VC DO204AC
Produkt ist nicht verfügbar
| SA8.0A A0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AC
Description: TVS DIODE 8VWM 13.6VC DO204AC
Produkt ist nicht verfügbar
| SA8.0CAHA0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AC
Description: TVS DIODE 8VWM 13.6VC DO204AC
Produkt ist nicht verfügbar
| SA8.0A B0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AC
Description: TVS DIODE 8VWM 13.6VC DO204AC
Produkt ist nicht verfügbar
| SA8.0CA A0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AC
Description: TVS DIODE 8VWM 13.6VC DO204AC
Produkt ist nicht verfügbar
| SA8.0AHA0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AC
Description: TVS DIODE 8VWM 13.6VC DO204AC
Produkt ist nicht verfügbar
| SA8.0AHB0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AC
Description: TVS DIODE 8VWM 13.6VC DO204AC
Produkt ist nicht verfügbar
| SA8.0A R0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AC
Description: TVS DIODE 8VWM 13.6VC DO204AC
Produkt ist nicht verfügbar
| SA8.0CA B0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AC
Description: TVS DIODE 8VWM 13.6VC DO204AC
Produkt ist nicht verfügbar
| SA8.0CAHR0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AC
Description: TVS DIODE 8VWM 13.6VC DO204AC
Produkt ist nicht verfügbar
| SA8.0AHR0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AC
Description: TVS DIODE 8VWM 13.6VC DO204AC
Produkt ist nicht verfügbar
| SA8.0CAHB0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AC
Description: TVS DIODE 8VWM 13.6VC DO204AC
Produkt ist nicht verfügbar
| SA8.0AH |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS 500W 9.4V 5% DO-15
Description: TVS 500W 9.4V 5% DO-15
Produkt ist nicht verfügbar
| SA8.0CAH |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS 500W 9.4V 5% DO-15
Description: TVS 500W 9.4V 5% DO-15
Produkt ist nicht verfügbar
| SMDJ30CAH |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AB
Description: TVS DIODE 30VWM 48.4VC DO214AB
Produkt ist nicht verfügbar
| MUR8L60 |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 1.37 EUR |
| 15+ | 1.18 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.58 EUR |
| MUR8L60H |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 1.37 EUR |
| 15+ | 1.18 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.58 EUR |
| TSSE3U60HRVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123HE
Description: DIODE SCHOTTKY 60V 3A SOD123HE
Produkt ist nicht verfügbar
| TSSE3U60HRVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123HE
Description: DIODE SCHOTTKY 60V 3A SOD123HE
auf Bestellung 530 Stücke:
Lieferzeit 10-14 Tag (e)| TSM3443CX6 RFG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.7A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Description: MOSFET P-CHANNEL 20V 4.7A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Produkt ist nicht verfügbar
| TSM3443CX6 RFG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.7A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Description: MOSFET P-CHANNEL 20V 4.7A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
auf Bestellung 3077 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 34+ | 0.53 EUR |
| 39+ | 0.45 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.21 EUR |
| FR203G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
| TSM130NB06LCR |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 10A/51A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 30 V
Description: MOSFET N-CH 60V 10A/51A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 30 V
Produkt ist nicht verfügbar
| ZM4753A L0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 1W MELF
Description: DIODE ZENER 36V 1W MELF
Produkt ist nicht verfügbar
| TLD8S14AH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO218AB
Description: TVS DIODE 14VWM 23.2VC DO218AB
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)| TLD8S14AH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO218AB
Description: TVS DIODE 14VWM 23.2VC DO218AB
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)| 1.5SMC130A R6G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
| 1.5SMC130A R6 |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
| 1.5SMC130A M6G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
| 1.5SMC130A R7G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
| 1.5SMC130A M6 |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
| 1.5SMC130A R7 |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
| KBU602G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 6A 100V KBU
Description: DIODE BRIDGE 6A 100V KBU
Produkt ist nicht verfügbar
| SS26L RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Produkt ist nicht verfügbar
| SS26L MQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Produkt ist nicht verfügbar
| SS26L MHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Produkt ist nicht verfügbar
| SS26L RUG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Produkt ist nicht verfügbar
| SS26L R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Produkt ist nicht verfügbar
| SS26LHRUG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
| SS26LHMHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Produkt ist nicht verfügbar
| SS26LHMQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Produkt ist nicht verfügbar
| SS26LHM2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Produkt ist nicht verfügbar
| SS26L M2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Produkt ist nicht verfügbar
| SS26LHRQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Produkt ist nicht verfügbar
| SS26LHRHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Produkt ist nicht verfügbar
| SS26L RTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Produkt ist nicht verfügbar
| SS26L RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Produkt ist nicht verfügbar
| SS26L MTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Produkt ist nicht verfügbar
| SS26L RQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Produkt ist nicht verfügbar
| SS26LHRTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Produkt ist nicht verfügbar
| SS26LHRFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Produkt ist nicht verfügbar
| SS26LHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Produkt ist nicht verfügbar
| SS26LHMTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Produkt ist nicht verfügbar
| BAS40 RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Description: DIODE SCHOTTKY 40V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Produkt ist nicht verfügbar
| BAS40 RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Description: DIODE SCHOTTKY 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 28+ | 0.65 EUR |
| 37+ | 0.48 EUR |
| 100+ | 0.27 EUR |
| P4KE27CA A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 23.1VWM 37.5VC DO204AL
Description: TVS DIODE 23.1VWM 37.5VC DO204AL
Produkt ist nicht verfügbar
| P4KE27CA R1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 23.1VWM 37.5VC DO204AL
Description: TVS DIODE 23.1VWM 37.5VC DO204AL
Produkt ist nicht verfügbar
| P4KE27A R1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 23.1VWM 37.5VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 23.1VWM 37.5VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar