Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (23459) > Seite 156 nach 391
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SA160AHB0G | Taiwan Semiconductor Corporation |
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HS5A R7G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
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HS5A R7G | Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
auf Bestellung 751 Stücke: Lieferzeit 10-14 Tag (e) |
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HS5B R7G | Taiwan Semiconductor Corporation |
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HS5B R7G | Taiwan Semiconductor Corporation |
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5.0SMDJ22A M6G | Taiwan Semiconductor Corporation |
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auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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5.0SMDJ22A M6G | Taiwan Semiconductor Corporation |
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auf Bestellung 2907 Stücke: Lieferzeit 10-14 Tag (e) |
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5.0SMDJ22AHM6G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 141A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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5.0SMDJ22AHM6G | Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 141A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSF20L100C C0G | Taiwan Semiconductor Corporation |
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auf Bestellung 1989 Stücke: Lieferzeit 10-14 Tag (e) |
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SS215LW RVG | Taiwan Semiconductor Corporation |
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SS215LW RVG | Taiwan Semiconductor Corporation |
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auf Bestellung 3581 Stücke: Lieferzeit 10-14 Tag (e) |
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SS215L RVG | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V |
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SS215L RVG | Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V |
auf Bestellung 714 Stücke: Lieferzeit 10-14 Tag (e) |
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SS215LWHRVG | Taiwan Semiconductor Corporation |
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auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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SS215LWHRVG | Taiwan Semiconductor Corporation |
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auf Bestellung 13750 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM650N15CS RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 150V 9A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 12.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V |
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TSM650N15CS RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 150V 9A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 12.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V |
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HS1FFL | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 11pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
auf Bestellung 4559 Stücke: Lieferzeit 10-14 Tag (e) |
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HS1FFL | Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 11pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
auf Bestellung 6885 Stücke: Lieferzeit 10-14 Tag (e) |
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HERAF1606G C0G | Taiwan Semiconductor Corporation |
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auf Bestellung 3175 Stücke: Lieferzeit 10-14 Tag (e) |
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SSL13 M2G | Taiwan Semiconductor Corporation |
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P4SMA110AHM2G | Taiwan Semiconductor Corporation |
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P4SMA11AHM2G | Taiwan Semiconductor Corporation |
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1SMA110Z M2G | Taiwan Semiconductor Corporation |
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1PGSMA110ZHM2G | Taiwan Semiconductor Corporation |
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1SMA110Z R3G | Taiwan Semiconductor Corporation |
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P4SMA110CA M2G | Taiwan Semiconductor Corporation |
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P4SMA11CA M2G | Taiwan Semiconductor Corporation |
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P4SMA110A M2G | Taiwan Semiconductor Corporation |
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P4SMA11A M2G | Taiwan Semiconductor Corporation |
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P4SMA110AHR3G | Taiwan Semiconductor Corporation |
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P4SMA11AHR3G | Taiwan Semiconductor Corporation |
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1SMA110ZHM2G | Taiwan Semiconductor Corporation |
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P4SMA110A R3G | Taiwan Semiconductor Corporation |
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P4SMA11A R3G | Taiwan Semiconductor Corporation |
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1PGSMA110Z M2G | Taiwan Semiconductor Corporation |
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BZX55B10 A0G | Taiwan Semiconductor Corporation |
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MTZJ2V7SA R0G | Taiwan Semiconductor Corporation |
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TSF10H45C C0G | Taiwan Semiconductor Corporation |
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auf Bestellung 941 Stücke: Lieferzeit 10-14 Tag (e) |
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SMCJ170A V6G | Taiwan Semiconductor Corporation |
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SMCJ170A R7G | Taiwan Semiconductor Corporation |
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SMCJ170A V7G | Taiwan Semiconductor Corporation |
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SMCJ170AHR7G | Taiwan Semiconductor Corporation |
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BZD27C150PW | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 150V 1W SOD123W Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 300 Ohms Supplier Device Package: SOD-123W Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 110 V |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZD27C150PW | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 150V 1W SOD123W Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 300 Ohms Supplier Device Package: SOD-123W Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 110 V |
auf Bestellung 36776 Stücke: Lieferzeit 10-14 Tag (e) |
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BZD27C150PWH | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 150V 1W SOD123W Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 300 Ohms Supplier Device Package: SOD-123W Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 110 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZD27C150PWH | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 150V 1W SOD123W Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 300 Ohms Supplier Device Package: SOD-123W Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 110 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 7661 Stücke: Lieferzeit 10-14 Tag (e) |
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BZD27C110PW | Taiwan Semiconductor Corporation |
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BZD27C110PW | Taiwan Semiconductor Corporation |
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BZD27C110PWH | Taiwan Semiconductor Corporation |
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BZD27C110PWH | Taiwan Semiconductor Corporation |
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1SMB5950 M4G | Taiwan Semiconductor Corporation |
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1SMB5950 R5G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 110 V Impedance (Max) (Zzt): 300 Ohms Supplier Device Package: DO-214AA (SMB) Power - Max: 3 W Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V |
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1SMB5950HM4G | Taiwan Semiconductor Corporation |
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1SMB5950HR5G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 110V 3W DO214AA Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 110 V Impedance (Max) (Zzt): 300 Ohms Supplier Device Package: DO-214AA (SMB) Power - Max: 3 W Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V |
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1PGSMB5950 R5G | Taiwan Semiconductor Corporation |
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1PGSMB5950HR5G | Taiwan Semiconductor Corporation |
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TSP10U60S S1G | Taiwan Semiconductor Corporation |
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BZV55B4V3 L1G | Taiwan Semiconductor Corporation |
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SA160AHB0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 160V 259V DO204AC
Description: TVS DIODE 160V 259V DO204AC
Produkt ist nicht verfügbar
HS5A R7G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
HS5A R7G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 751 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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19+ | 0.95 EUR |
22+ | 0.82 EUR |
100+ | 0.61 EUR |
HS5B R7G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 5A DO214AB
Description: DIODE GEN PURP 100V 5A DO214AB
Produkt ist nicht verfügbar
HS5B R7G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 5A DO214AB
Description: DIODE GEN PURP 100V 5A DO214AB
Produkt ist nicht verfügbar
5.0SMDJ22A M6G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 22V 35.5V DO214AB
Description: TVS DIODE 22V 35.5V DO214AB
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)5.0SMDJ22A M6G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 22V 35.5V DO214AB
Description: TVS DIODE 22V 35.5V DO214AB
auf Bestellung 2907 Stücke:
Lieferzeit 10-14 Tag (e)5.0SMDJ22AHM6G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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3000+ | 2.89 EUR |
5.0SMDJ22AHM6G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)TSF20L100C C0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
Description: DIODE ARRAY SCHOTT 100V ITO220AB
auf Bestellung 1989 Stücke:
Lieferzeit 10-14 Tag (e)SS215LW RVG |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 2A SOD123W
Description: DIODE SCHOTTKY 150V 2A SOD123W
Produkt ist nicht verfügbar
SS215LW RVG |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 2A SOD123W
Description: DIODE SCHOTTKY 150V 2A SOD123W
auf Bestellung 3581 Stücke:
Lieferzeit 10-14 Tag (e)SS215L RVG |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Description: DIODE SCHOTTKY 150V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
SS215L RVG |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 2A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Description: DIODE SCHOTTKY 150V 2A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
auf Bestellung 714 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 0.69 EUR |
34+ | 0.53 EUR |
100+ | 0.32 EUR |
500+ | 0.3 EUR |
SS215LWHRVG |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 2A SOD123W
Description: DIODE SCHOTTKY 150V 2A SOD123W
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.28 EUR |
6000+ | 0.26 EUR |
SS215LWHRVG |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 2A SOD123W
Description: DIODE SCHOTTKY 150V 2A SOD123W
auf Bestellung 13750 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 0.81 EUR |
26+ | 0.68 EUR |
100+ | 0.51 EUR |
500+ | 0.4 EUR |
1000+ | 0.31 EUR |
TSM650N15CS RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 150V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V
Description: MOSFET N-CHANNEL 150V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V
Produkt ist nicht verfügbar
TSM650N15CS RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 150V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V
Description: MOSFET N-CHANNEL 150V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V
Produkt ist nicht verfügbar
HS1FFL |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
auf Bestellung 4559 Stücke:
Lieferzeit 10-14 Tag (e)HS1FFL |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
auf Bestellung 6885 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
36+ | 0.49 EUR |
53+ | 0.33 EUR |
108+ | 0.16 EUR |
500+ | 0.14 EUR |
1000+ | 0.095 EUR |
2000+ | 0.082 EUR |
5000+ | 0.076 EUR |
HERAF1606G C0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 16A ITO220AC
Description: DIODE GEN PURP 600V 16A ITO220AC
auf Bestellung 3175 Stücke:
Lieferzeit 10-14 Tag (e)SSL13 M2G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 1A DO214AC
Description: DIODE SCHOTTKY 30V 1A DO214AC
Produkt ist nicht verfügbar
P4SMA110AHM2G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 94V 152V DO214AC
Description: TVS DIODE 94V 152V DO214AC
Produkt ist nicht verfügbar
P4SMA11AHM2G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9.4V 15.6V DO214AC
Description: TVS DIODE 9.4V 15.6V DO214AC
Produkt ist nicht verfügbar
1SMA110Z M2G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 110V 1.25W DO214AC
Description: DIODE ZENER 110V 1.25W DO214AC
Produkt ist nicht verfügbar
1PGSMA110ZHM2G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, ZENER, 110V
Description: DIODE, ZENER, 110V
Produkt ist nicht verfügbar
1SMA110Z R3G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 110V 1.25W DO214AC
Description: DIODE ZENER 110V 1.25W DO214AC
Produkt ist nicht verfügbar
P4SMA110CA M2G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 94V 152V DO214AC
Description: TVS DIODE 94V 152V DO214AC
Produkt ist nicht verfügbar
P4SMA11CA M2G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9.4V 15.6V DO214AC
Description: TVS DIODE 9.4V 15.6V DO214AC
Produkt ist nicht verfügbar
P4SMA110A M2G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 94V 152V DO214AC
Description: TVS DIODE 94V 152V DO214AC
Produkt ist nicht verfügbar
P4SMA11A M2G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9.4V 15.6V DO214AC
Description: TVS DIODE 9.4V 15.6V DO214AC
Produkt ist nicht verfügbar
P4SMA110AHR3G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 94V 152V DO214AC
Description: TVS DIODE 94V 152V DO214AC
Produkt ist nicht verfügbar
P4SMA11AHR3G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9.4V 15.6V DO214AC
Description: TVS DIODE 9.4V 15.6V DO214AC
Produkt ist nicht verfügbar
1SMA110ZHM2G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 110V 1.25W DO214AC
Description: DIODE ZENER 110V 1.25W DO214AC
Produkt ist nicht verfügbar
P4SMA110A R3G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 94VWM 152VC DO214AC
Description: TVS DIODE 94VWM 152VC DO214AC
Produkt ist nicht verfügbar
P4SMA11A R3G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9.4V 15.6V DO214AC
Description: TVS DIODE 9.4V 15.6V DO214AC
Produkt ist nicht verfügbar
1PGSMA110Z M2G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, ZENER, 110V
Description: DIODE, ZENER, 110V
Produkt ist nicht verfügbar
BZX55B10 A0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW DO35
Description: DIODE ZENER 10V 500MW DO35
Produkt ist nicht verfügbar
MTZJ2V7SA R0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.65V 500MW DO34
Description: DIODE ZENER 2.65V 500MW DO34
Produkt ist nicht verfügbar
TSF10H45C C0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 45V ITO220AB
Description: DIODE ARRAY SCHOTT 45V ITO220AB
auf Bestellung 941 Stücke:
Lieferzeit 10-14 Tag (e)SMCJ170A V6G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 170V 275V DO214AB
Description: TVS DIODE 170V 275V DO214AB
Produkt ist nicht verfügbar
SMCJ170A R7G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 170V 275V DO214AB
Description: TVS DIODE 170V 275V DO214AB
Produkt ist nicht verfügbar
SMCJ170A V7G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 170V 275V DO214AB
Description: TVS DIODE 170V 275V DO214AB
Produkt ist nicht verfügbar
SMCJ170AHR7G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 170V 275V DO214AB
Description: TVS DIODE 170V 275V DO214AB
Produkt ist nicht verfügbar
BZD27C150PW |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 150V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Description: DIODE ZENER 150V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.16 EUR |
BZD27C150PW |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 150V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Description: DIODE ZENER 150V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
auf Bestellung 36776 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.7 EUR |
33+ | 0.54 EUR |
100+ | 0.32 EUR |
500+ | 0.3 EUR |
1000+ | 0.2 EUR |
2000+ | 0.19 EUR |
5000+ | 0.18 EUR |
BZD27C150PWH |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 150V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 150V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.18 EUR |
6000+ | 0.17 EUR |
BZD27C150PWH |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 150V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 150V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7661 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.79 EUR |
32+ | 0.56 EUR |
100+ | 0.28 EUR |
500+ | 0.25 EUR |
1000+ | 0.2 EUR |
BZD27C110PW |
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Hersteller: Taiwan Semiconductor Corporation
Description: SOD123W 1000MW 5% ZENER DIODE
Description: SOD123W 1000MW 5% ZENER DIODE
Produkt ist nicht verfügbar
BZD27C110PW |
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Hersteller: Taiwan Semiconductor Corporation
Description: SOD123W 1000MW 5% ZENER DIODE
Description: SOD123W 1000MW 5% ZENER DIODE
Produkt ist nicht verfügbar
BZD27C110PWH |
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Hersteller: Taiwan Semiconductor Corporation
Description: AUTOMOTIVE SOD123W 1000MW 5% ZEN
Description: AUTOMOTIVE SOD123W 1000MW 5% ZEN
Produkt ist nicht verfügbar
BZD27C110PWH |
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Hersteller: Taiwan Semiconductor Corporation
Description: AUTOMOTIVE SOD123W 1000MW 5% ZEN
Description: AUTOMOTIVE SOD123W 1000MW 5% ZEN
Produkt ist nicht verfügbar
1SMB5950 M4G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 110V 3W DO214AA
Description: DIODE ZENER 110V 3W DO214AA
Produkt ist nicht verfügbar
1SMB5950 R5G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 110V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V
Description: DIODE ZENER 110V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V
Produkt ist nicht verfügbar
1SMB5950HM4G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 110V 3W DO214AA
Description: DIODE ZENER 110V 3W DO214AA
Produkt ist nicht verfügbar
1SMB5950HR5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 110V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V
Description: DIODE ZENER 110V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V
Produkt ist nicht verfügbar
1PGSMB5950 R5G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 110V 3W DO214AA
Description: DIODE ZENER 110V 3W DO214AA
Produkt ist nicht verfügbar
1PGSMB5950HR5G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 110V 3W DO214AA
Description: DIODE ZENER 110V 3W DO214AA
Produkt ist nicht verfügbar
TSP10U60S S1G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A TO277A
Description: DIODE SCHOTTKY 60V 10A TO277A
Produkt ist nicht verfügbar
BZV55B4V3 L1G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW MINI MELF
Description: DIODE ZENER 4.3V 500MW MINI MELF
Produkt ist nicht verfügbar