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5.0SMDJ54A M6G 5.0SMDJ54A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 54VWM 87.1VC DO214AB
auf Bestellung 2850 Stücke:
Lieferzeit 10-14 Tag (e)
5.0SMDJ20A M6G 5.0SMDJ20A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_D2102.pdf Description: TVS DIODE 20VWM 32.4VC DO214AB
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
5.0SMDJ20A M6G 5.0SMDJ20A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_D2102.pdf Description: TVS DIODE 20VWM 32.4VC DO214AB
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
5.0SMDJ24A M6G 5.0SMDJ24A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 24V 38.9V DO214AB
Produkt ist nicht verfügbar
5.0SMDJ24A M6G 5.0SMDJ24A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 24V 38.9V DO214AB
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
5.0SMDJ28A M6G 5.0SMDJ28A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 28V 45.4V DO214AB
Produkt ist nicht verfügbar
5.0SMDJ28A M6G 5.0SMDJ28A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 28V 45.4V DO214AB
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
5.0SMDJ36A M6G 5.0SMDJ36A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 36V 58.1V DO214AB
Produkt ist nicht verfügbar
5.0SMDJ36A M6G 5.0SMDJ36A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 36V 58.1V DO214AB
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
5.0SMDJ43A M6G 5.0SMDJ43A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 43V 69.4V DO214AB
Produkt ist nicht verfügbar
5.0SMDJ43A M6G 5.0SMDJ43A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 43V 69.4V DO214AB
auf Bestellung 6000 Stücke:
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5.0SMDJ26A M6G 5.0SMDJ26A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 26V 42.1V DO214AB
Produkt ist nicht verfügbar
5.0SMDJ26A M6G 5.0SMDJ26A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 26V 42.1V DO214AB
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
ES2J R5G ES2J R5G Taiwan Semiconductor Corporation ES2A%20-%20ES2J.pdf Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
ES2J R5G ES2J R5G Taiwan Semiconductor Corporation ES2A%20-%20ES2J.pdf Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
ES2JA R3G ES2JA R3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 5400 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.44 EUR
3600+ 0.4 EUR
5400+ 0.39 EUR
Mindestbestellmenge: 1800
ES2JA R3G ES2JA R3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 600V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 6468 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.39 EUR
19+ 0.93 EUR
100+ 0.64 EUR
500+ 0.51 EUR
Mindestbestellmenge: 13
ES2JAL M3G ES2JAL M3G Taiwan Semiconductor Corporation Description: 35NS, 2A, 600V, SUPER FAST RECOV
auf Bestellung 3500 Stücke:
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ES2JAL M3G ES2JAL M3G Taiwan Semiconductor Corporation Description: 35NS, 2A, 600V, SUPER FAST RECOV
auf Bestellung 4020 Stücke:
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ES2JFS M3G ES2JFS M3G Taiwan Semiconductor Corporation Description: 35NS, 2A, 600V, SUPER FAST RECOV
auf Bestellung 3500 Stücke:
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ES2JFS M3G ES2JFS M3G Taiwan Semiconductor Corporation Description: 35NS, 2A, 600V, SUPER FAST RECOV
auf Bestellung 6310 Stücke:
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ES2JA M2G ES2JA M2G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 600V 2A DO214AC
Produkt ist nicht verfügbar
ES2JAHM2G ES2JAHM2G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 600V 2A DO214AC
Produkt ist nicht verfügbar
ES2JAHR3G ES2JAHR3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ES2J M4G ES2J M4G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 600V 2A DO214AA
Produkt ist nicht verfügbar
ES2JHM4G ES2JHM4G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 600V 2A DO214AA
Produkt ist nicht verfügbar
ES2JHR5G ES2JHR5G Taiwan Semiconductor Corporation ES2A%20-%20ES2J.pdf Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TS78L05CT A3G TS78L05CT A3G Taiwan Semiconductor Corporation TS78L00_M2206.pdf Description: IC REG LINEAR 5V 100MA TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
TS78L05CT A3G TS78L05CT A3G Taiwan Semiconductor Corporation TS78L00_M2206.pdf Description: IC REG LINEAR 5V 100MA TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
TS78L05CT B0G Taiwan Semiconductor Corporation TS78L00_M2206.pdf Description: IC REG LINEAR 5V 100MA TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
S8JCH S8JCH Taiwan Semiconductor Corporation S8GCH%20SERIES_B2210.pdf Description: DIODE GEN PURP 600V 8A DO214AB
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.39 EUR
6000+ 0.37 EUR
Mindestbestellmenge: 3000
S8JCH S8JCH Taiwan Semiconductor Corporation S8GCH%20SERIES_B2210.pdf Description: DIODE GEN PURP 600V 8A DO214AB
auf Bestellung 11921 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.18 EUR
17+ 1.04 EUR
100+ 0.8 EUR
500+ 0.63 EUR
1000+ 0.51 EUR
Mindestbestellmenge: 15
S8JC V7G S8JC V7G Taiwan Semiconductor Corporation S8GC%20SERIES_G2210.pdf Description: DIODE GEN PURP 600V 8A DO214AB
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
850+0.99 EUR
Mindestbestellmenge: 850
S8JC V7G S8JC V7G Taiwan Semiconductor Corporation S8GC%20SERIES_G2210.pdf Description: DIODE GEN PURP 600V 8A DO214AB
auf Bestellung 1157 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.71 EUR
12+ 1.53 EUR
100+ 1.19 EUR
Mindestbestellmenge: 11
S8JC R7G S8JC R7G Taiwan Semiconductor Corporation S8GC%20SERIES_G2210.pdf Description: DIODE GEN PURP 600V 8A DO214AB
auf Bestellung 86 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.14 EUR
18+ 0.98 EUR
Mindestbestellmenge: 16
S8JC M6G S8JC M6G Taiwan Semiconductor Corporation S8GC%20SERIES_G2210.pdf Description: DIODE GEN PURP 600V 8A DO214AB
Produkt ist nicht verfügbar
S8JC V6G S8JC V6G Taiwan Semiconductor Corporation S8GC%20SERIES_F2102.pdf Description: DIODE GEN PURP 600V 8A DO214AB
Produkt ist nicht verfügbar
S8JCHM6G S8JCHM6G Taiwan Semiconductor Corporation S8GCH%20SERIES_B2210.pdf Description: DIODE GEN PURP 600V 8A DO214AB
Produkt ist nicht verfügbar
TSM60NB099CZ C0G TSM60NB099CZ C0G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 600V 38A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 11.3A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
Produkt ist nicht verfügbar
TSM60NB099PW C1G TSM60NB099PW C1G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 600V 38A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
auf Bestellung 97 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.24 EUR
25+ 10.57 EUR
Mindestbestellmenge: 2
SMBJ64A M4G SMBJ64A M4G Taiwan Semiconductor Corporation SMBJ SERIES_Q2004.pdf Description: TVS DIODE 64V 103V DO214AA
Produkt ist nicht verfügbar
SMBJ64A R5G SMBJ64A R5G Taiwan Semiconductor Corporation SMBJ SERIES_Q2004.pdf Description: TVS DIODE 64V 103V DO214AA
Produkt ist nicht verfügbar
SMBJ64A R5G SMBJ64A R5G Taiwan Semiconductor Corporation SMBJ SERIES_Q2004.pdf Description: TVS DIODE 64V 103V DO214AA
Produkt ist nicht verfügbar
SMBJ64AHM4G SMBJ64AHM4G Taiwan Semiconductor Corporation SMBJ SERIES_Q2004.pdf Description: TVS DIODE 64V 103V DO214AA
Produkt ist nicht verfügbar
SMBJ64AHR5G SMBJ64AHR5G Taiwan Semiconductor Corporation SMBJ SERIES_Q2004.pdf Description: TVS DIODE 64V 103V DO214AA
Produkt ist nicht verfügbar
MBRF1090CTHC0G MBRF1090CTHC0G Taiwan Semiconductor Corporation MBRF1035CT%20SERIES_L13.pdf Description: DIODE ARRAY SCHOTT 90V ITO220AB
Produkt ist nicht verfügbar
MBRF1090HC0G MBRF1090HC0G Taiwan Semiconductor Corporation MBRF1035%20SERIES_L1512.pdf Description: DIODE SCHOTTKY 90V 10A ITO220AC
Produkt ist nicht verfügbar
SRF1090 C0G SRF1090 C0G Taiwan Semiconductor Corporation SRF1020%20SERIES_K1706.pdf Description: DIODE ARRAY SCHOTT 90V ITO220AB
Produkt ist nicht verfügbar
SRF1090HC0G SRF1090HC0G Taiwan Semiconductor Corporation SRF1020%20SERIES_K1706.pdf Description: DIODE ARRAY SCHOTT 90V ITO220AB
Produkt ist nicht verfügbar
SR1204 A0G SR1204 A0G Taiwan Semiconductor Corporation SR1202%20SERIES_G2105.pdf Description: DIODE SCHOTTKY 40V 12A DO201AD
Produkt ist nicht verfügbar
TSM110NB04DCR RLG TSM110NB04DCR RLG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.8 EUR
5000+ 0.76 EUR
12500+ 0.73 EUR
Mindestbestellmenge: 2500
TSM110NB04DCR RLG TSM110NB04DCR RLG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 14882 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.94 EUR
12+ 1.58 EUR
100+ 1.23 EUR
500+ 1.04 EUR
1000+ 0.85 EUR
Mindestbestellmenge: 10
TSM110NB04LDCR RLG TSM110NB04LDCR RLG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.8 EUR
Mindestbestellmenge: 2500
TSM110NB04LDCR RLG TSM110NB04LDCR RLG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 4235 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.94 EUR
12+ 1.58 EUR
100+ 1.23 EUR
500+ 1.04 EUR
1000+ 0.85 EUR
Mindestbestellmenge: 10
TSM110NB04CR RLG TSM110NB04CR RLG Taiwan Semiconductor Corporation pdf.php?pn=TSM110NB04CR Description: MOSFET N-CH 40V 12A/54A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1443 pF @ 20 V
Produkt ist nicht verfügbar
TSM110NB04CR RLG TSM110NB04CR RLG Taiwan Semiconductor Corporation pdf.php?pn=TSM110NB04CR Description: MOSFET N-CH 40V 12A/54A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1443 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.3 EUR
16+ 1.12 EUR
100+ 0.78 EUR
500+ 0.65 EUR
1000+ 0.55 EUR
Mindestbestellmenge: 14
TSM110NB04LCR RLG TSM110NB04LCR RLG Taiwan Semiconductor Corporation TSM110NB04LCR_B1804.pdf Description: MOSFET N-CH 40V 12A/54A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1269 pF @ 20 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.43 EUR
Mindestbestellmenge: 2500
TSM110NB04LCR RLG TSM110NB04LCR RLG Taiwan Semiconductor Corporation TSM110NB04LCR_B1804.pdf Description: MOSFET N-CH 40V 12A/54A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1269 pF @ 20 V
auf Bestellung 23205 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.93 EUR
22+ 0.8 EUR
100+ 0.56 EUR
500+ 0.46 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 19
1.5SMC68A V6G 1.5SMC68A V6G Taiwan Semiconductor Corporation 1.5SMC SERIES_Q2004.pdf Description: TVS DIODE 58.1V 92V DO214AB
Produkt ist nicht verfügbar
1.5SMC68A V7G 1.5SMC68A V7G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_S2207.pdf Description: TVS DIODE 58.1VWM 92VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
5.0SMDJ54A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ54A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 54VWM 87.1VC DO214AB
auf Bestellung 2850 Stücke:
Lieferzeit 10-14 Tag (e)
5.0SMDJ20A M6G 5.0SMDJ%20SERIES_D2102.pdf
5.0SMDJ20A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AB
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
5.0SMDJ20A M6G 5.0SMDJ%20SERIES_D2102.pdf
5.0SMDJ20A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AB
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
5.0SMDJ24A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ24A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 24V 38.9V DO214AB
Produkt ist nicht verfügbar
5.0SMDJ24A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ24A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 24V 38.9V DO214AB
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
5.0SMDJ28A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ28A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28V 45.4V DO214AB
Produkt ist nicht verfügbar
5.0SMDJ28A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ28A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28V 45.4V DO214AB
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
5.0SMDJ36A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ36A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36V 58.1V DO214AB
Produkt ist nicht verfügbar
5.0SMDJ36A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ36A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36V 58.1V DO214AB
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
5.0SMDJ43A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ43A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 43V 69.4V DO214AB
Produkt ist nicht verfügbar
5.0SMDJ43A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ43A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 43V 69.4V DO214AB
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
5.0SMDJ26A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ26A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 26V 42.1V DO214AB
Produkt ist nicht verfügbar
5.0SMDJ26A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ26A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 26V 42.1V DO214AB
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
ES2J R5G ES2A%20-%20ES2J.pdf
ES2J R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
ES2J R5G ES2A%20-%20ES2J.pdf
ES2J R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
ES2JA R3G ES2AA%20SERIES_M2102.pdf
ES2JA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 5400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1800+0.44 EUR
3600+ 0.4 EUR
5400+ 0.39 EUR
Mindestbestellmenge: 1800
ES2JA R3G ES2AA%20SERIES_M2102.pdf
ES2JA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 6468 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.39 EUR
19+ 0.93 EUR
100+ 0.64 EUR
500+ 0.51 EUR
Mindestbestellmenge: 13
ES2JAL M3G
ES2JAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 600V, SUPER FAST RECOV
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
ES2JAL M3G
ES2JAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 600V, SUPER FAST RECOV
auf Bestellung 4020 Stücke:
Lieferzeit 10-14 Tag (e)
ES2JFS M3G
ES2JFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 600V, SUPER FAST RECOV
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
ES2JFS M3G
ES2JFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 600V, SUPER FAST RECOV
auf Bestellung 6310 Stücke:
Lieferzeit 10-14 Tag (e)
ES2JA M2G ES2AA%20SERIES_M2102.pdf
ES2JA M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Produkt ist nicht verfügbar
ES2JAHM2G ES2AA%20SERIES_M2102.pdf
ES2JAHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Produkt ist nicht verfügbar
ES2JAHR3G ES2AA%20SERIES_M2102.pdf
ES2JAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ES2J M4G ES2A%20SERIES_L2102.pdf
ES2J M4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Produkt ist nicht verfügbar
ES2JHM4G ES2A%20SERIES_L2102.pdf
ES2JHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Produkt ist nicht verfügbar
ES2JHR5G ES2A%20-%20ES2J.pdf
ES2JHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TS78L05CT A3G TS78L00_M2206.pdf
TS78L05CT A3G
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 100MA TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
TS78L05CT A3G TS78L00_M2206.pdf
TS78L05CT A3G
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 100MA TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
TS78L05CT B0G TS78L00_M2206.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 100MA TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
S8JCH S8GCH%20SERIES_B2210.pdf
S8JCH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.39 EUR
6000+ 0.37 EUR
Mindestbestellmenge: 3000
S8JCH S8GCH%20SERIES_B2210.pdf
S8JCH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
auf Bestellung 11921 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.18 EUR
17+ 1.04 EUR
100+ 0.8 EUR
500+ 0.63 EUR
1000+ 0.51 EUR
Mindestbestellmenge: 15
S8JC V7G S8GC%20SERIES_G2210.pdf
S8JC V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
850+0.99 EUR
Mindestbestellmenge: 850
S8JC V7G S8GC%20SERIES_G2210.pdf
S8JC V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
auf Bestellung 1157 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.71 EUR
12+ 1.53 EUR
100+ 1.19 EUR
Mindestbestellmenge: 11
S8JC R7G S8GC%20SERIES_G2210.pdf
S8JC R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
auf Bestellung 86 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.14 EUR
18+ 0.98 EUR
Mindestbestellmenge: 16
S8JC M6G S8GC%20SERIES_G2210.pdf
S8JC M6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Produkt ist nicht verfügbar
S8JC V6G S8GC%20SERIES_F2102.pdf
S8JC V6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Produkt ist nicht verfügbar
S8JCHM6G S8GCH%20SERIES_B2210.pdf
S8JCHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Produkt ist nicht verfügbar
TSM60NB099CZ C0G
TSM60NB099CZ C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 38A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 11.3A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
Produkt ist nicht verfügbar
TSM60NB099PW C1G
TSM60NB099PW C1G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 38A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
auf Bestellung 97 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+13.24 EUR
25+ 10.57 EUR
Mindestbestellmenge: 2
SMBJ64A M4G SMBJ SERIES_Q2004.pdf
SMBJ64A M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AA
Produkt ist nicht verfügbar
SMBJ64A R5G SMBJ SERIES_Q2004.pdf
SMBJ64A R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AA
Produkt ist nicht verfügbar
SMBJ64A R5G SMBJ SERIES_Q2004.pdf
SMBJ64A R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AA
Produkt ist nicht verfügbar
SMBJ64AHM4G SMBJ SERIES_Q2004.pdf
SMBJ64AHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AA
Produkt ist nicht verfügbar
SMBJ64AHR5G SMBJ SERIES_Q2004.pdf
SMBJ64AHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AA
Produkt ist nicht verfügbar
MBRF1090CTHC0G MBRF1035CT%20SERIES_L13.pdf
MBRF1090CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Produkt ist nicht verfügbar
MBRF1090HC0G MBRF1035%20SERIES_L1512.pdf
MBRF1090HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 10A ITO220AC
Produkt ist nicht verfügbar
SRF1090 C0G SRF1020%20SERIES_K1706.pdf
SRF1090 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Produkt ist nicht verfügbar
SRF1090HC0G SRF1020%20SERIES_K1706.pdf
SRF1090HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Produkt ist nicht verfügbar
SR1204 A0G SR1202%20SERIES_G2105.pdf
SR1204 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 12A DO201AD
Produkt ist nicht verfügbar
TSM110NB04DCR RLG
TSM110NB04DCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.8 EUR
5000+ 0.76 EUR
12500+ 0.73 EUR
Mindestbestellmenge: 2500
TSM110NB04DCR RLG
TSM110NB04DCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 14882 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.94 EUR
12+ 1.58 EUR
100+ 1.23 EUR
500+ 1.04 EUR
1000+ 0.85 EUR
Mindestbestellmenge: 10
TSM110NB04LDCR RLG
TSM110NB04LDCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.8 EUR
Mindestbestellmenge: 2500
TSM110NB04LDCR RLG
TSM110NB04LDCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 4235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.94 EUR
12+ 1.58 EUR
100+ 1.23 EUR
500+ 1.04 EUR
1000+ 0.85 EUR
Mindestbestellmenge: 10
TSM110NB04CR RLG pdf.php?pn=TSM110NB04CR
TSM110NB04CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 12A/54A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1443 pF @ 20 V
Produkt ist nicht verfügbar
TSM110NB04CR RLG pdf.php?pn=TSM110NB04CR
TSM110NB04CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 12A/54A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1443 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.3 EUR
16+ 1.12 EUR
100+ 0.78 EUR
500+ 0.65 EUR
1000+ 0.55 EUR
Mindestbestellmenge: 14
TSM110NB04LCR RLG TSM110NB04LCR_B1804.pdf
TSM110NB04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 12A/54A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1269 pF @ 20 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.43 EUR
Mindestbestellmenge: 2500
TSM110NB04LCR RLG TSM110NB04LCR_B1804.pdf
TSM110NB04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 12A/54A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1269 pF @ 20 V
auf Bestellung 23205 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.93 EUR
22+ 0.8 EUR
100+ 0.56 EUR
500+ 0.46 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 19
1.5SMC68A V6G 1.5SMC SERIES_Q2004.pdf
1.5SMC68A V6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1V 92V DO214AB
Produkt ist nicht verfügbar
1.5SMC68A V7G 1.5SMC%20SERIES_S2207.pdf
1.5SMC68A V7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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