Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (23927) > Seite 171 nach 399
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SMCJ28CA V6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 28V 45.4V DO214AB |
Produkt ist nicht verfügbar |
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SMCJ28CAHR7G | Taiwan Semiconductor Corporation | Description: TVS DIODE 28V 45.4V DO214AB |
Produkt ist nicht verfügbar |
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YBS3004G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 400V 3A YBS Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: YBS Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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YBS3004G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 400V 3A YBS Packaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: YBS Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2HA R3G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 500V 2A DO214AC |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2HA R3G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 500V 2A DO214AC |
auf Bestellung 3106 Stücke: Lieferzeit 10-14 Tag (e) |
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SR16100 C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTTKY 100V TO220 |
Produkt ist nicht verfügbar |
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SR16100HC0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTTKY 100V TO220 |
Produkt ist nicht verfügbar |
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SR16100PT C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTTKY 100V TO247 |
Produkt ist nicht verfügbar |
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SR16100PTHC0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTTKY 100V TO247 |
Produkt ist nicht verfügbar |
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SK26A M2G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 60V 2A DO214AC |
Produkt ist nicht verfügbar |
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1KSMB33A M4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 28.2VWM 45.7VC DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 21.9A Voltage - Reverse Standoff (Typ): 28.2V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 31.4V Voltage - Clamping (Max) @ Ipp: 45.7V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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BZW06-13 A0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 12.8V 27.2V DO204AC |
Produkt ist nicht verfügbar |
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SMA6J22AHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 22VWM 34.5VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 17.4A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 34.5V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SMA6J22AHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 22VWM 34.5VC DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 17.4A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 34.5V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBJ30CAHR5G | Taiwan Semiconductor Corporation | Description: TVS DIODE 30VWM 48.4VC DO214AA |
Produkt ist nicht verfügbar |
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SMBJ33CA M4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33VWM 53.3VC DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11.8A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar |
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SMBJ33CAHM4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 33VWM 53.3VC DO214AA |
Produkt ist nicht verfügbar |
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KBP202G C2 | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 100V 2A KBP Packaging: Tube Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
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KBP202G C2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 100V 2A KBP Packaging: Tube Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
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1SMB5927 M4G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 12V 3W DO214AA |
Produkt ist nicht verfügbar |
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1SMB5927 R5G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 12V 3W DO214AA |
Produkt ist nicht verfügbar |
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1SMB5927HM4G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 12V 3W DO214AA |
Produkt ist nicht verfügbar |
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1SMB5927HR5G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 12V 3W DO214AA |
Produkt ist nicht verfügbar |
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TSM3404CX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 30V 5.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400.96 pF @ 15 V |
Produkt ist nicht verfügbar |
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TSM3404CX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 30V 5.8A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400.96 pF @ 15 V |
Produkt ist nicht verfügbar |
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BZD17C13P RQG | Taiwan Semiconductor Corporation | Description: DIODE ZENER 13V 800MW SUB SMA |
Produkt ist nicht verfügbar |
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BZD17C13P R3G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 13V 800MW SUB SMA |
Produkt ist nicht verfügbar |
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BZD27C13PHRVG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13.25V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±6.41% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 13.25 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: Sub SMA Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 10 V |
Produkt ist nicht verfügbar |
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BZD27C13P R3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13.25V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±6.41% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 13.25 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: Sub SMA Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 10 V |
Produkt ist nicht verfügbar |
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BZD27C13P RUG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13.25V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±6.41% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 13.25 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: Sub SMA Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 10 V |
Produkt ist nicht verfügbar |
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BZD27C13PHMTG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13.25V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±6.41% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 13.25 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: Sub SMA Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 10 V |
Produkt ist nicht verfügbar |
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BZD27C13PHRUG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13.25V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±6.41% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 13.25 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: Sub SMA Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 10 V |
Produkt ist nicht verfügbar |
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S5KBHR5G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 800V 5A DO214AA |
auf Bestellung 1700 Stücke: Lieferzeit 10-14 Tag (e) |
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S5KBHR5G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 800V 5A DO214AA |
auf Bestellung 2141 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM033NB04CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 40V 21A/121A 8PDFN |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM033NB04CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 40V 21A/121A 8PDFN |
auf Bestellung 4930 Stücke: Lieferzeit 10-14 Tag (e) |
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S1MFL RVG | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 1KV 1A SOD123FL |
Produkt ist nicht verfügbar |
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S1MFL RVG | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 1KV 1A SOD123FL |
Produkt ist nicht verfügbar |
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RS2DFS M3G | Taiwan Semiconductor Corporation | Description: 150NS, 2A, 200V, FAST RECOVERY R |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
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RS2DFS M3G | Taiwan Semiconductor Corporation | Description: 150NS, 2A, 200V, FAST RECOVERY R |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
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MBR760 C0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 7.5A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 7.5A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
Produkt ist nicht verfügbar |
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MBR760HC0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 7.5A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 7.5A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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HER1002G C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY GP 100V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
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HER1005G C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY GP 400V 10A TO220AB |
Produkt ist nicht verfügbar |
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P4KE91CA R0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 77.8V 125V DO204AL |
Produkt ist nicht verfügbar |
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P4KE91CAHR0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 77.8V 125V DO204AL |
Produkt ist nicht verfügbar |
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P4KE91CA R1G | Taiwan Semiconductor Corporation | Description: TVS DIODE 77.8V 125V DO204AL |
Produkt ist nicht verfügbar |
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P4KE91CAHR1G | Taiwan Semiconductor Corporation | Description: TVS DIODE 77.8V 125V DO204AL |
Produkt ist nicht verfügbar |
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P4KE91CA A0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 77.8V 125V DO204AL |
Produkt ist nicht verfügbar |
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P4KE91CAHA0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 77.8V 125V DO204AL |
Produkt ist nicht verfügbar |
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P4KE91CA B0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 77.8V 125V DO204AL |
Produkt ist nicht verfügbar |
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P4KE91CAHB0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 77.8V 125V DO204AL |
Produkt ist nicht verfügbar |
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SR2060HC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 60V 20A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SR2060PT C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY GP 60V 20A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
Produkt ist nicht verfügbar |
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SR2060PTHC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY GP 60V 20A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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TSF40L45C C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTT 45V ITO220AB |
auf Bestellung 963 Stücke: Lieferzeit 10-14 Tag (e) |
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GBPC1501 T0G | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1PHASE 100V 15A GBPC |
Produkt ist nicht verfügbar |
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GBPC1501M T0G | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1P 100V 15A GBPC-M |
Produkt ist nicht verfügbar |
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GBPC1502 T0G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 200V 15A GBPC Packaging: Tray Package / Case: 4-Square, GBPC Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
SMCJ28CA V6G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28V 45.4V DO214AB
Description: TVS DIODE 28V 45.4V DO214AB
Produkt ist nicht verfügbar
SMCJ28CAHR7G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28V 45.4V DO214AB
Description: TVS DIODE 28V 45.4V DO214AB
Produkt ist nicht verfügbar
YBS3004G |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 3A YBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 3A YBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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3000+ | 0.2 EUR |
YBS3004G |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 3A YBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 3A YBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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24+ | 0.74 EUR |
28+ | 0.64 EUR |
100+ | 0.44 EUR |
500+ | 0.35 EUR |
1000+ | 0.28 EUR |
ES2HA R3G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 2A DO214AC
Description: DIODE GEN PURP 500V 2A DO214AC
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)ES2HA R3G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 2A DO214AC
Description: DIODE GEN PURP 500V 2A DO214AC
auf Bestellung 3106 Stücke:
Lieferzeit 10-14 Tag (e)SR16100 C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO220
Description: DIODE ARRAY SCHOTTKY 100V TO220
Produkt ist nicht verfügbar
SR16100HC0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO220
Description: DIODE ARRAY SCHOTTKY 100V TO220
Produkt ist nicht verfügbar
SR16100PT C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO247
Description: DIODE ARRAY SCHOTTKY 100V TO247
Produkt ist nicht verfügbar
SR16100PTHC0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO247
Description: DIODE ARRAY SCHOTTKY 100V TO247
Produkt ist nicht verfügbar
SK26A M2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A DO214AC
Description: DIODE SCHOTTKY 60V 2A DO214AC
Produkt ist nicht verfügbar
1KSMB33A M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.9A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 28.2VWM 45.7VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.9A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
BZW06-13 A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8V 27.2V DO204AC
Description: TVS DIODE 12.8V 27.2V DO204AC
Produkt ist nicht verfügbar
SMA6J22AHR3G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 34.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.4A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 34.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 22VWM 34.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.4A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 34.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMA6J22AHR3G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 34.5VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.4A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 34.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 22VWM 34.5VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.4A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 34.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1 EUR |
21+ | 0.87 EUR |
SMBJ30CAHR5G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AA
Description: TVS DIODE 30VWM 48.4VC DO214AA
Produkt ist nicht verfügbar
SMBJ33CA M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.8A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 33VWM 53.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.8A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
SMBJ33CAHM4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO214AA
Description: TVS DIODE 33VWM 53.3VC DO214AA
Produkt ist nicht verfügbar
KBP202G C2 |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
KBP202G C2G |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
1SMB5927 M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 3W DO214AA
Description: DIODE ZENER 12V 3W DO214AA
Produkt ist nicht verfügbar
1SMB5927 R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 3W DO214AA
Description: DIODE ZENER 12V 3W DO214AA
Produkt ist nicht verfügbar
1SMB5927HM4G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 3W DO214AA
Description: DIODE ZENER 12V 3W DO214AA
Produkt ist nicht verfügbar
1SMB5927HR5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 3W DO214AA
Description: DIODE ZENER 12V 3W DO214AA
Produkt ist nicht verfügbar
TSM3404CX RFG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400.96 pF @ 15 V
Description: MOSFET N-CHANNEL 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400.96 pF @ 15 V
Produkt ist nicht verfügbar
TSM3404CX RFG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 5.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400.96 pF @ 15 V
Description: MOSFET N-CHANNEL 30V 5.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400.96 pF @ 15 V
Produkt ist nicht verfügbar
BZD17C13P RQG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 800MW SUB SMA
Description: DIODE ZENER 13V 800MW SUB SMA
Produkt ist nicht verfügbar
BZD17C13P R3G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 800MW SUB SMA
Description: DIODE ZENER 13V 800MW SUB SMA
Produkt ist nicht verfügbar
BZD27C13PHRVG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
BZD27C13P R3G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
BZD27C13P RUG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
BZD27C13PHMTG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
BZD27C13PHRUG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
S5KBHR5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 5A DO214AA
Description: DIODE GEN PURP 800V 5A DO214AA
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)S5KBHR5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 5A DO214AA
Description: DIODE GEN PURP 800V 5A DO214AA
auf Bestellung 2141 Stücke:
Lieferzeit 10-14 Tag (e)TSM033NB04CR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 21A/121A 8PDFN
Description: MOSFET N-CH 40V 21A/121A 8PDFN
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)TSM033NB04CR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 21A/121A 8PDFN
Description: MOSFET N-CH 40V 21A/121A 8PDFN
auf Bestellung 4930 Stücke:
Lieferzeit 10-14 Tag (e)S1MFL RVG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SOD123FL
Description: DIODE GEN PURP 1KV 1A SOD123FL
Produkt ist nicht verfügbar
S1MFL RVG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SOD123FL
Description: DIODE GEN PURP 1KV 1A SOD123FL
Produkt ist nicht verfügbar
RS2DFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 150NS, 2A, 200V, FAST RECOVERY R
Description: 150NS, 2A, 200V, FAST RECOVERY R
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)RS2DFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 150NS, 2A, 200V, FAST RECOVERY R
Description: 150NS, 2A, 200V, FAST RECOVERY R
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)MBR760 C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
MBR760HC0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
HER1002G C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 100V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE ARRAY GP 100V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
HER1005G C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 400V 10A TO220AB
Description: DIODE ARRAY GP 400V 10A TO220AB
Produkt ist nicht verfügbar
P4KE91CA R0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 77.8V 125V DO204AL
Description: TVS DIODE 77.8V 125V DO204AL
Produkt ist nicht verfügbar
P4KE91CAHR0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 77.8V 125V DO204AL
Description: TVS DIODE 77.8V 125V DO204AL
Produkt ist nicht verfügbar
P4KE91CA R1G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 77.8V 125V DO204AL
Description: TVS DIODE 77.8V 125V DO204AL
Produkt ist nicht verfügbar
P4KE91CAHR1G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 77.8V 125V DO204AL
Description: TVS DIODE 77.8V 125V DO204AL
Produkt ist nicht verfügbar
P4KE91CA A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 77.8V 125V DO204AL
Description: TVS DIODE 77.8V 125V DO204AL
Produkt ist nicht verfügbar
P4KE91CAHA0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 77.8V 125V DO204AL
Description: TVS DIODE 77.8V 125V DO204AL
Produkt ist nicht verfügbar
P4KE91CA B0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 77.8V 125V DO204AL
Description: TVS DIODE 77.8V 125V DO204AL
Produkt ist nicht verfügbar
P4KE91CAHB0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 77.8V 125V DO204AL
Description: TVS DIODE 77.8V 125V DO204AL
Produkt ist nicht verfügbar
SR2060HC0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 60V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 60V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SR2060PT C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 60V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE ARRAY GP 60V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
SR2060PTHC0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 60V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 60V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TSF40L45C C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 45V ITO220AB
Description: DIODE ARRAY SCHOTT 45V ITO220AB
auf Bestellung 963 Stücke:
Lieferzeit 10-14 Tag (e)GBPC1501 T0G |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 15A GBPC
Description: BRIDGE RECT 1PHASE 100V 15A GBPC
Produkt ist nicht verfügbar
GBPC1501M T0G |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 15A GBPC-M
Description: BRIDGE RECT 1P 100V 15A GBPC-M
Produkt ist nicht verfügbar
GBPC1502 T0G |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 15A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 15A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar