Suchergebnisse für "15n10" : > 60

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100pF 100V NP0 J(+/-5%) (R15N101J2AL2-B-Hitano) 100pF 100V NP0 J(+/-5%) (R15N101J2AL2-B-Hitano)
Produktcode: 192517
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Hitano multilayer_ceramic_capacitorsepoxxyy.pdf Kondensatoren keramische > Kondensatoren keramische mehrschichtige
Kapazität: 100 pF
Nennspannung: 100 V
TKE: NP0
Präzision: ±5% J
Abmessungen: 2,54 mm
Part Nummer: R15N101J2AL2-B
auf Bestellung 1782 Stück:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
100pF 200V NP0 J(+/-5%) (R15N101J2DH5-L-Hitano) 100pF 200V NP0 J(+/-5%) (R15N101J2DH5-L-Hitano)
Produktcode: 192518
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Hitano multilayer_ceramic_capacitorsepoxxyy.pdf Kondensatoren keramische > Kondensatoren keramische mehrschichtige
Kapazität: 100 pF
Nennspannung: 200 V
TKE: NP0
Präzision: ±5% J
Abmessungen: 5,08 mm
Part Nummer: R15N101J2DH5-L
auf Bestellung 2513 Stück:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
100pF 50V NP0 5% 5mm (RD15N101J1HA5L) 100pF 50V NP0 5% 5mm (RD15N101J1HA5L)
Produktcode: 76319
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Cinetech Kondensatoren keramische > Kondensatoren keramische mehrschichtige
Kapazität: 100pF
Nennspannung: 50V
TKE: NP0
Präzision: ±5% J
Abmessungen: 5,08mm
verfügbar: 250 Stück
10+0.04 EUR
100+0.02 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
100pF 50V NP0 J(+/-5%) (R15N101J1HL2-L) 100pF 50V NP0 J(+/-5%) (R15N101J1HL2-L)
Produktcode: 2904
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Hitano multilayer_ceramic_capacitorsepoxxyy.pdf Kondensatoren keramische > Kondensatoren keramische mehrschichtige
Kapazität: 100pF
Nennspannung: 50V
TKE: NP0
Präzision: ±5% J
Abmessungen: 2,54mm
Part Nummer: R15N101J1HL-2L
verfügbar: 1938 Stück
240 Stück - stock Köln
1698 Stück - lieferbar in 3-4 Wochen
10+0.04 EUR
100+0.02 EUR
1000+0.02 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
10pF 50V NP0 J(+/-5%) (R15N100J1HL2-L) 10pF 50V NP0 J(+/-5%) (R15N100J1HL2-L)
Produktcode: 38831
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Hitano multilayer_ceramic_capacitorsepoxxyy.pdf Kondensatoren keramische > Kondensatoren keramische mehrschichtige
Kapazität: 10pF
Nennspannung: 50V
TKE: NP0
Präzision: ±5% J
Abmessungen: 2,54mm
Part Nummer: R15N100J1HL2-L
auf Bestellung 1270 Stück:
Lieferzeit 21-28 Tag (e)
10+0.04 EUR
100+0.02 EUR
1000+0.02 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
1nF 100V NP0 J(+/-5%) (R15N102J2AH5-L) 1nF 100V NP0 J(+/-5%) (R15N102J2AH5-L)
Produktcode: 18266
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Hitano multilayer_ceramic_capaacitorsepoxy.pdf Kondensatoren keramische > Kondensatoren keramische mehrschichtige
Kapazität: 1nF
Nennspannung: 100V
TKE: NP0
Präzision: ±5% J
Abmessungen: 5,08mm
Part Nummer: R15N102J2AH5-L
verfügbar: 1000 Stück
116 Stück - stock Köln
884 Stück - lieferbar in 3-4 Wochen
10+0.06 EUR
100+0.04 EUR
1000+0.03 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
1nF 100V NP0 J(+/-5%) (R15N102J2AL2-L – Hitano) 1nF 100V NP0 J(+/-5%) (R15N102J2AL2-L – Hitano)
Produktcode: 143093
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Hitano multilayer_ceramic_capacitorsepoxy.pdf Kondensatoren keramische > Kondensatoren keramische mehrschichtige
Kapazität: 1 nF
Nennspannung: 100 V
TKE: NP0
Präzision: ±5% J
Abmessungen: 2,54 mm
auf Bestellung 1086 Stück:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
1nF 50V NP0 J(+/-5%) (R15N102J1HL2-L) 1nF 50V NP0 J(+/-5%) (R15N102J1HL2-L)
Produktcode: 2901
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Hitano multilayer_ceramic_capacitorsepoxxyy.pdf Kondensatoren keramische > Kondensatoren keramische mehrschichtige
Kapazität: 1nF
Nennspannung: 50V
TKE: NP0
Präzision: ±5% J
Abmessungen: 2,54mm
Part Nummer: R15N102J1HL-2L
verfügbar: 7103 Stück
116 Stück - stock Köln
6987 Stück - lieferbar in 3-4 Wochen
10+0.06 EUR
100+0.03 EUR
1000+0.02 EUR
10000+0.02 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
15N10 15N10 UMW 15N10.pdf Description: 100V 15A 50W 80MR@10V,10A 2.5V@2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 50 V
auf Bestellung 1792 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.41 EUR
20+0.88 EUR
100+0.57 EUR
500+0.44 EUR
1000+0.39 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
81-115N-1000 81-115N-1000 Amphenol RF tmp_701186.tmp.pdf Description: CONN MINI UHF PLUG STR 50OHM
Packaging: Bulk
Connector Type: Plug, Male Pin
Contact Termination: Crimp or Solder
Impedance: 50 Ohms
Mounting Type: Free Hanging (In-Line)
Cable Group: RG-58, 58A, 58B, 58C, 141, 303, LMR-195, Belden B7806A, 9907
Fastening Type: Threaded
Connector Style: UHF, Mini
Housing Color: Silver
Shield Termination: Crimp
Center Contact Material: Brass
Part Status: Active
Frequency - Max: 2.5 GHz
Number of Ports: 1
auf Bestellung 109 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.19 EUR
10+13.77 EUR
25+12.90 EUR
50+12.29 EUR
100+11.70 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
ES2215N102K502NTM ES2215N102K502NTM Knowles Novacap Certified_Safety_Caps_Nov2018.pdf Description: CAP CER 1000PF 250V C0G 2215
Tolerance: ±10%
Packaging: Cut Tape (CT)
Voltage - Rated: 250VAC
Package / Case: 2215 (5738 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.220" L x 0.150" W (5.58mm x 3.81mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: X1, Y2
Thickness (Max): 0.150" (3.81mm)
Part Status: Active
Capacitance: 1000 pF
auf Bestellung 1795 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.59 EUR
10+7.01 EUR
100+5.66 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
ET215N10-Z ET215N10-Z Nidec Components Corporation et.pdf Description: SWITCH TOGGLE DPDT 15A 125V
Packaging: Bulk
Current Rating (Amps): 15A (AC)
Mounting Type: Panel Mount
Circuit: DPDT
Switch Function: On-On
Termination Style: Screw Terminal
Illumination: Non-Illuminated
Bushing Thread: M12 x 1
Actuator Length: 17.00mm
Actuator Type: Standard Round
Panel Cutout Dimensions: Circular - 12.50mm Dia
Part Status: Active
Voltage Rating - AC: 125 V
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
1+26.68 EUR
10+23.02 EUR
30+21.45 EUR
50+20.76 EUR
Im Einkaufswagen  Stück im Wert von  UAH
G15N10C G15N10C Goford Semiconductor G15N10C.pdf Description: MOSFET N-CH 100V 22A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 8A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.23 EUR
15000+0.22 EUR
30000+0.19 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
HH15N100F500CT HH15N100F500CT WALSIN WTC_MLCC_HQ_Low_ESR_HH.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10pF; 50V; C0G (NP0); ±1%; SMD; 0402
Mounting: SMD
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 10pF
Manufacturer series: HH15
Operating temperature: -55...125°C
Kind of capacitor: MLCC
Case - mm: 1005
Case - inch: 0402
Tolerance: ±1%
Operating voltage: 50V
auf Bestellung 27900 Stücke:
Lieferzeit 14-21 Tag (e)
2300+0.03 EUR
5400+0.01 EUR
7500+0.01 EUR
8000+0.01 EUR
Mindestbestellmenge: 2300
Im Einkaufswagen  Stück im Wert von  UAH
HH15N100F500CT HH15N100F500CT WALSIN WTC_MLCC_HQ_Low_ESR_HH.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10pF; 50V; C0G (NP0); ±1%; SMD; 0402
Mounting: SMD
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 10pF
Manufacturer series: HH15
Operating temperature: -55...125°C
Kind of capacitor: MLCC
Case - mm: 1005
Case - inch: 0402
Tolerance: ±1%
Operating voltage: 50V
Anzahl je Verpackung: 100 Stücke
auf Bestellung 27900 Stücke:
Lieferzeit 7-14 Tag (e)
2300+0.03 EUR
5400+0.01 EUR
7500+0.01 EUR
8000+0.01 EUR
Mindestbestellmenge: 2300
Im Einkaufswagen  Stück im Wert von  UAH
HH15N100G500CT HH15N100G500CT WALSIN WTC_MLCC_HQ_Low_ESR_HH.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; low ESR,MLCC; 10pF; 50V; C0G (NP0); ±2%; SMD
Mounting: SMD
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 10pF
Operating temperature: -55...125°C
Kind of capacitor: low ESR; MLCC
Capacitors features: high reliability
Case - mm: 1005
Case - inch: 0402
Tolerance: ±2%
Operating voltage: 50V
auf Bestellung 9900 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.03 EUR
5900+0.01 EUR
8000+0.01 EUR
8400+0.01 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
HH15N100G500CT HH15N100G500CT WALSIN WTC_MLCC_HQ_Low_ESR_HH.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; low ESR,MLCC; 10pF; 50V; C0G (NP0); ±2%; SMD
Mounting: SMD
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 10pF
Operating temperature: -55...125°C
Kind of capacitor: low ESR; MLCC
Capacitors features: high reliability
Case - mm: 1005
Case - inch: 0402
Tolerance: ±2%
Operating voltage: 50V
Anzahl je Verpackung: 100 Stücke
auf Bestellung 9900 Stücke:
Lieferzeit 7-14 Tag (e)
2500+0.03 EUR
5900+0.01 EUR
8000+0.01 EUR
8400+0.01 EUR
10000+0.01 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
HH15N100J500CT Walsin Technology Corporation WTC_MLCC_HQ_Low_ESR_HH.pdf Description: CAP CER 10PF 50V C0G/NP0 0402
Packaging: Cut Tape (CT)
Tolerance: ±5%
Features: High Q, Low Loss, Ultra Low ESR
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 10 pF
auf Bestellung 24504 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
455+0.04 EUR
827+0.02 EUR
1359+0.01 EUR
2500+0.01 EUR
5000+0.01 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
HH15N100J500CT Walsin Technology Corporation WTC_MLCC_HQ_Low_ESR_HH.pdf Description: CAP CER 10PF 50V C0G/NP0 0402
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Features: High Q, Low Loss, Ultra Low ESR
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 10 pF
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.01 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
HH15N101J500CT Walsin Technology Corporation WTC_MLCC_HQ_Low_ESR_HH.pdf Description: CAP CER 100PF 50V C0G/NP0 0402
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Features: High Q, Low Loss, Ultra Low ESR
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 100 pF
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.00 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
HH15N101J500CT Walsin Technology Corporation WTC_MLCC_HQ_Low_ESR_HH.pdf Description: CAP CER 100PF 50V C0G/NP0 0402
Packaging: Cut Tape (CT)
Tolerance: ±5%
Features: High Q, Low Loss, Ultra Low ESR
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 100 pF
auf Bestellung 14003 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
589+0.03 EUR
1031+0.02 EUR
1722+0.01 EUR
2500+0.01 EUR
5000+0.01 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
IPT015N10N5ATMA1 IPT015N10N5ATMA1 Infineon Technologies Infineon-IPT015N10N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014ac94680661aff Description: MOSFET N-CH 100V 300A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+5.00 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
IPT015N10N5ATMA1 IPT015N10N5ATMA1 Infineon Technologies Infineon-IPT015N10N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014ac94680661aff Description: MOSFET N-CH 100V 300A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
auf Bestellung 5721 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.92 EUR
10+5.96 EUR
100+5.21 EUR
500+4.88 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPT015N10NF2SATMA1 IPT015N10NF2SATMA1 Infineon Technologies Infineon-IPT015N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183ef5e9b67212b Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 315A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 242 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
auf Bestellung 384 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.36 EUR
10+4.85 EUR
100+3.44 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFH15N100P IXFH15N100P IXYS IXFH15N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 543W
Case: TO247-3
On-state resistance: 760mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.07 EUR
7+10.74 EUR
8+10.15 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFH15N100P IXFH15N100P IXYS IXFH15N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 543W
Case: TO247-3
On-state resistance: 760mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.07 EUR
7+10.74 EUR
8+10.15 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFH15N100P IXFH15N100P Littelfuse Inc. Description: MOSFET N-CH 1000V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 760mOhm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
auf Bestellung 155 Stücke:
Lieferzeit 10-14 Tag (e)
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IXFH15N100Q3 IXFH15N100Q3 IXYS IXF_15N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IXFH15N100Q3 IXFH15N100Q3 Littelfuse Inc. littelfuse-discrete-mosfets-ixf-15n100q3-datasheet?assetguid=2eb816c3-afba-4569-a822-bf202a29101a Description: MOSFET N-CH 1000V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 7.5A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
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IXFR15N100Q3 IXFR15N100Q3 IXYS IXFR15N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 400W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 400W
Case: ISOPLUS247™
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
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IXFR15N100Q3 IXFR15N100Q3 IXYS IXFR15N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 400W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 400W
Case: ISOPLUS247™
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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MCQ15N10YA-TP MCQ15N10YA-TP MCC (Micro Commercial Components) MCQ15N10YA(SOP-8).pdf Description: MOSFET N-CH DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
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MCQ15N10YA-TP MCQ15N10YA-TP MCC (Micro Commercial Components) MCQ15N10YA(SOP-8).pdf Description: MOSFET N-CH DFN3333
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
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MCU15N10A-TP MCU15N10A-TP MCC (Micro Commercial Components) MCU15N10A(DPAK).pdf Description: MOSFET N-CH 100V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 8A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
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MDD15N10D MDD15N10D MDD MDD15N10D000SD.pdf?rlkey=zfyir94x32hf5vdcbaml1i8q6&st=h672yjo0&dl=0 Description: MOSFET N 100V 15A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V
Power Dissipation (Max): 28W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 50 V
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MGV1004R15N-10 MGV1004R15N-10 Laird-Signal Integrity Products mgv1004-series-datasheet Description: FIXED IND 150NH 43A 0.6MOHM SMD
Packaging: Tape & Reel (TR)
Tolerance: ±30%
Package / Case: Nonstandard
Size / Dimension: 0.433" L x 0.394" W (11.00mm x 10.00mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Molded
Operating Temperature: -55°C ~ 125°C
DC Resistance (DCR): 0.6mOhm Max
Ratings: AEC-Q200
Current - Saturation (Isat): 75A
Inductance Frequency - Test: 100 kHz
Height - Seated (Max): 0.173" (4.40mm)
Part Status: Active
Inductance: 150 nH
Current Rating (Amps): 43 A
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MGV1004R15N-10 MGV1004R15N-10 Laird-Signal Integrity Products mgv1004-series-datasheet Description: FIXED IND 150NH 43A 0.6MOHM SMD
Packaging: Cut Tape (CT)
Tolerance: ±30%
Package / Case: Nonstandard
Size / Dimension: 0.433" L x 0.394" W (11.00mm x 10.00mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Molded
Operating Temperature: -55°C ~ 125°C
DC Resistance (DCR): 0.6mOhm Max
Ratings: AEC-Q200
Current - Saturation (Isat): 75A
Inductance Frequency - Test: 100 kHz
Height - Seated (Max): 0.173" (4.40mm)
Part Status: Active
Inductance: 150 nH
Current Rating (Amps): 43 A
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MT15N100J500CT MT15N100J500CT WALSIN MT18B.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10pF; 50V; C0G (NP0); ±5%; SMD; 0402
Mounting: SMD
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 10pF
Manufacturer series: MT15
Operating temperature: -55...125°C
Kind of capacitor: MLCC
Case - mm: 1005
Case - inch: 0402
Tolerance: ±5%
Operating voltage: 50V
auf Bestellung 1000 Stücke:
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MT15N100J500CT MT15N100J500CT WALSIN MT18B.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10pF; 50V; C0G (NP0); ±5%; SMD; 0402
Mounting: SMD
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 10pF
Manufacturer series: MT15
Operating temperature: -55...125°C
Kind of capacitor: MLCC
Case - mm: 1005
Case - inch: 0402
Tolerance: ±5%
Operating voltage: 50V
Anzahl je Verpackung: 1000 Stücke
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1000+0.07 EUR
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MT15N100J500CT MT15N100J500CT Walsin Technology Corporation WTC_MLCC_Automotive_MT.pdf Description: CAP CER 10PF 50V C0G/NP0 0402
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Automotive
Ratings: AEC-Q200
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 10 pF
auf Bestellung 10000 Stücke:
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MT15N100J500CT MT15N100J500CT Walsin Technology Corporation WTC_MLCC_Automotive_MT.pdf Description: CAP CER 10PF 50V C0G/NP0 0402
Packaging: Cut Tape (CT)
Tolerance: ±5%
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Automotive
Ratings: AEC-Q200
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 10 pF
auf Bestellung 18719 Stücke:
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MT15N101J500CT MT15N101J500CT Walsin Technology Corporation WTC_MLCC_Automotive_MT.pdf Description: CAP CER 100PF 50V C0G/NP0 0402
Packaging: Cut Tape (CT)
Tolerance: ±5%
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Automotive
Ratings: AEC-Q200
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 100 pF
auf Bestellung 11190 Stücke:
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NTMFS015N10MCLT1G NTMFS015N10MCLT1G onsemi ntmfs015n10mcl-d.pdf Description: MOSFET N-CH 100V 10.5A/54A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 282µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13380 pF @ 50 V
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NTMFS015N10MCLT1G NTMFS015N10MCLT1G onsemi ntmfs015n10mcl-d.pdf Description: MOSFET N-CH 100V 10.5A/54A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 282µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13380 pF @ 50 V
auf Bestellung 2054 Stücke:
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NVMFS015N10MCLT1G NVMFS015N10MCLT1G onsemi nvmfs015n10mcl-d.pdf Description: MOSFET N-CH 100V 10.5A/54A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 282µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
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NVMFS015N10MCLT1G NVMFS015N10MCLT1G onsemi nvmfs015n10mcl-d.pdf Description: MOSFET N-CH 100V 10.5A/54A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 282µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 5409 Stücke:
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500+1.02 EUR
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PSMN015N10NS2_R2_00201 Panjit International Inc. 20230516171020ta7o3bGUZ1.pdf Description: 100V/ 1.5M / TOLL FOR ESS/ BBU/
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 395A
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
auf Bestellung 574 Stücke:
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RF15N100J500CT Walsin Technology Corporation WTC_MLCC_Microwave_RF.pdf Description: CAP CER 10PF 50V C0G/NP0 0402
Tolerance: ±5%
Features: High Q, Low Loss, Ultra Low ESR
Packaging: Cut Tape (CT)
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 10 pF
auf Bestellung 15655 Stücke:
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RF15N100J500CT Walsin Technology Corporation WTC_MLCC_Microwave_RF.pdf Description: CAP CER 10PF 50V C0G/NP0 0402
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Features: High Q, Low Loss, Ultra Low ESR
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 10 pF
auf Bestellung 10000 Stücke:
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10000+0.02 EUR
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STH315N10F7-2 STH315N10F7-2 STMicroelectronics sth315n10f7-2.pdf Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 418 Stücke:
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10+7.30 EUR
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STH315N10F7-6 STH315N10F7-6 STMicroelectronics sth315n10f7-2.pdf Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2469 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.15 EUR
10+7.08 EUR
100+5.12 EUR
500+4.28 EUR
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STH315N10F7-6 STH315N10F7-6 STMicroelectronics sth315n10f7-2.pdf Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
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1000+4.17 EUR
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STL115N10F7AG STL115N10F7AG STMicroelectronics en.DM00333356.pdf Description: MOSFET N-CH 100V 107A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 53A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 14938 Stücke:
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10+3.51 EUR
100+2.43 EUR
500+1.97 EUR
1000+1.83 EUR
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STL115N10F7AG STL115N10F7AG STMicroelectronics en.DM00333356.pdf Description: MOSFET N-CH 100V 107A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 53A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.69 EUR
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STP315N10F7 STP315N10F7 STMicroelectronics en.DM00096835.pdf Description: MOSFET N-CH 100V 180A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 496 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.50 EUR
50+4.99 EUR
100+4.55 EUR
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STTFS015N10MCL STTFS015N10MCL onsemi sttfs015n10mcl-d.pdf Description: -
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 3V @ 77µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V
auf Bestellung 472 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.09 EUR
12+1.48 EUR
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WMO15N10T1 WMO15N10T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 981 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
254+0.28 EUR
338+0.21 EUR
379+0.19 EUR
424+0.17 EUR
451+0.16 EUR
Mindestbestellmenge: 107
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YJD15N10A YJD15N10A YANGJIE TECHNOLOGY YJD15N10A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.5A
Pulsed drain current: 60A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2250 Stücke:
Lieferzeit 14-21 Tag (e)
335+0.22 EUR
400+0.18 EUR
425+0.17 EUR
Mindestbestellmenge: 335
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500R15N100GV4T N/A N/A
auf Bestellung 32000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
501R15N101KV4T JOHANSON High_Voltage_MLCC.pdf SMD
auf Bestellung 86200 Stücke:
Lieferzeit 21-28 Tag (e)
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100pF 100V NP0 J(+/-5%) (R15N101J2AL2-B-Hitano)
Produktcode: 192517
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multilayer_ceramic_capacitorsepoxxyy.pdf
100pF 100V NP0 J(+/-5%) (R15N101J2AL2-B-Hitano)
Hersteller: Hitano
Kondensatoren keramische > Kondensatoren keramische mehrschichtige
Kapazität: 100 pF
Nennspannung: 100 V
TKE: NP0
Präzision: ±5% J
Abmessungen: 2,54 mm
Part Nummer: R15N101J2AL2-B
auf Bestellung 1782 Stück:
Lieferzeit 21-28 Tag (e)
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100pF 200V NP0 J(+/-5%) (R15N101J2DH5-L-Hitano)
Produktcode: 192518
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multilayer_ceramic_capacitorsepoxxyy.pdf
100pF 200V NP0 J(+/-5%) (R15N101J2DH5-L-Hitano)
Hersteller: Hitano
Kondensatoren keramische > Kondensatoren keramische mehrschichtige
Kapazität: 100 pF
Nennspannung: 200 V
TKE: NP0
Präzision: ±5% J
Abmessungen: 5,08 mm
Part Nummer: R15N101J2DH5-L
auf Bestellung 2513 Stück:
Lieferzeit 21-28 Tag (e)
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100pF 50V NP0 5% 5mm (RD15N101J1HA5L)
Produktcode: 76319
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100pF 50V NP0 5% 5mm (RD15N101J1HA5L)
Hersteller: Cinetech
Kondensatoren keramische > Kondensatoren keramische mehrschichtige
Kapazität: 100pF
Nennspannung: 50V
TKE: NP0
Präzision: ±5% J
Abmessungen: 5,08mm
verfügbar: 250 Stück
Anzahl Preis
10+0.04 EUR
100+0.02 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
100pF 50V NP0 J(+/-5%) (R15N101J1HL2-L)
Produktcode: 2904
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multilayer_ceramic_capacitorsepoxxyy.pdf
100pF 50V NP0 J(+/-5%) (R15N101J1HL2-L)
Hersteller: Hitano
Kondensatoren keramische > Kondensatoren keramische mehrschichtige
Kapazität: 100pF
Nennspannung: 50V
TKE: NP0
Präzision: ±5% J
Abmessungen: 2,54mm
Part Nummer: R15N101J1HL-2L
verfügbar: 1938 Stück
240 Stück - stock Köln
1698 Stück - lieferbar in 3-4 Wochen
Anzahl Preis
10+0.04 EUR
100+0.02 EUR
1000+0.02 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
10pF 50V NP0 J(+/-5%) (R15N100J1HL2-L)
Produktcode: 38831
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multilayer_ceramic_capacitorsepoxxyy.pdf
10pF 50V NP0 J(+/-5%) (R15N100J1HL2-L)
Hersteller: Hitano
Kondensatoren keramische > Kondensatoren keramische mehrschichtige
Kapazität: 10pF
Nennspannung: 50V
TKE: NP0
Präzision: ±5% J
Abmessungen: 2,54mm
Part Nummer: R15N100J1HL2-L
auf Bestellung 1270 Stück:
Lieferzeit 21-28 Tag (e)
Anzahl Preis
10+0.04 EUR
100+0.02 EUR
1000+0.02 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
1nF 100V NP0 J(+/-5%) (R15N102J2AH5-L)
Produktcode: 18266
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multilayer_ceramic_capaacitorsepoxy.pdf
1nF 100V NP0 J(+/-5%) (R15N102J2AH5-L)
Hersteller: Hitano
Kondensatoren keramische > Kondensatoren keramische mehrschichtige
Kapazität: 1nF
Nennspannung: 100V
TKE: NP0
Präzision: ±5% J
Abmessungen: 5,08mm
Part Nummer: R15N102J2AH5-L
verfügbar: 1000 Stück
116 Stück - stock Köln
884 Stück - lieferbar in 3-4 Wochen
Anzahl Preis
10+0.06 EUR
100+0.04 EUR
1000+0.03 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
1nF 100V NP0 J(+/-5%) (R15N102J2AL2-L – Hitano)
Produktcode: 143093
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multilayer_ceramic_capacitorsepoxy.pdf
1nF 100V NP0 J(+/-5%) (R15N102J2AL2-L – Hitano)
Hersteller: Hitano
Kondensatoren keramische > Kondensatoren keramische mehrschichtige
Kapazität: 1 nF
Nennspannung: 100 V
TKE: NP0
Präzision: ±5% J
Abmessungen: 2,54 mm
auf Bestellung 1086 Stück:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
1nF 50V NP0 J(+/-5%) (R15N102J1HL2-L)
Produktcode: 2901
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multilayer_ceramic_capacitorsepoxxyy.pdf
1nF 50V NP0 J(+/-5%) (R15N102J1HL2-L)
Hersteller: Hitano
Kondensatoren keramische > Kondensatoren keramische mehrschichtige
Kapazität: 1nF
Nennspannung: 50V
TKE: NP0
Präzision: ±5% J
Abmessungen: 2,54mm
Part Nummer: R15N102J1HL-2L
verfügbar: 7103 Stück
116 Stück - stock Köln
6987 Stück - lieferbar in 3-4 Wochen
Anzahl Preis
10+0.06 EUR
100+0.03 EUR
1000+0.02 EUR
10000+0.02 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
15N10 15N10.pdf
15N10
Hersteller: UMW
Description: 100V 15A 50W 80MR@10V,10A 2.5V@2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 50 V
auf Bestellung 1792 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
20+0.88 EUR
100+0.57 EUR
500+0.44 EUR
1000+0.39 EUR
Mindestbestellmenge: 13
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81-115N-1000 tmp_701186.tmp.pdf
81-115N-1000
Hersteller: Amphenol RF
Description: CONN MINI UHF PLUG STR 50OHM
Packaging: Bulk
Connector Type: Plug, Male Pin
Contact Termination: Crimp or Solder
Impedance: 50 Ohms
Mounting Type: Free Hanging (In-Line)
Cable Group: RG-58, 58A, 58B, 58C, 141, 303, LMR-195, Belden B7806A, 9907
Fastening Type: Threaded
Connector Style: UHF, Mini
Housing Color: Silver
Shield Termination: Crimp
Center Contact Material: Brass
Part Status: Active
Frequency - Max: 2.5 GHz
Number of Ports: 1
auf Bestellung 109 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.19 EUR
10+13.77 EUR
25+12.90 EUR
50+12.29 EUR
100+11.70 EUR
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ES2215N102K502NTM Certified_Safety_Caps_Nov2018.pdf
ES2215N102K502NTM
Hersteller: Knowles Novacap
Description: CAP CER 1000PF 250V C0G 2215
Tolerance: ±10%
Packaging: Cut Tape (CT)
Voltage - Rated: 250VAC
Package / Case: 2215 (5738 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.220" L x 0.150" W (5.58mm x 3.81mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: X1, Y2
Thickness (Max): 0.150" (3.81mm)
Part Status: Active
Capacitance: 1000 pF
auf Bestellung 1795 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.59 EUR
10+7.01 EUR
100+5.66 EUR
Mindestbestellmenge: 2
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ET215N10-Z et.pdf
ET215N10-Z
Hersteller: Nidec Components Corporation
Description: SWITCH TOGGLE DPDT 15A 125V
Packaging: Bulk
Current Rating (Amps): 15A (AC)
Mounting Type: Panel Mount
Circuit: DPDT
Switch Function: On-On
Termination Style: Screw Terminal
Illumination: Non-Illuminated
Bushing Thread: M12 x 1
Actuator Length: 17.00mm
Actuator Type: Standard Round
Panel Cutout Dimensions: Circular - 12.50mm Dia
Part Status: Active
Voltage Rating - AC: 125 V
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.68 EUR
10+23.02 EUR
30+21.45 EUR
50+20.76 EUR
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G15N10C G15N10C.pdf
G15N10C
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 22A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 8A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.23 EUR
15000+0.22 EUR
30000+0.19 EUR
Mindestbestellmenge: 2500
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HH15N100F500CT WTC_MLCC_HQ_Low_ESR_HH.pdf
HH15N100F500CT
Hersteller: WALSIN
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10pF; 50V; C0G (NP0); ±1%; SMD; 0402
Mounting: SMD
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 10pF
Manufacturer series: HH15
Operating temperature: -55...125°C
Kind of capacitor: MLCC
Case - mm: 1005
Case - inch: 0402
Tolerance: ±1%
Operating voltage: 50V
auf Bestellung 27900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2300+0.03 EUR
5400+0.01 EUR
7500+0.01 EUR
8000+0.01 EUR
Mindestbestellmenge: 2300
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HH15N100F500CT WTC_MLCC_HQ_Low_ESR_HH.pdf
HH15N100F500CT
Hersteller: WALSIN
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10pF; 50V; C0G (NP0); ±1%; SMD; 0402
Mounting: SMD
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 10pF
Manufacturer series: HH15
Operating temperature: -55...125°C
Kind of capacitor: MLCC
Case - mm: 1005
Case - inch: 0402
Tolerance: ±1%
Operating voltage: 50V
Anzahl je Verpackung: 100 Stücke
auf Bestellung 27900 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2300+0.03 EUR
5400+0.01 EUR
7500+0.01 EUR
8000+0.01 EUR
Mindestbestellmenge: 2300
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HH15N100G500CT WTC_MLCC_HQ_Low_ESR_HH.pdf
HH15N100G500CT
Hersteller: WALSIN
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; low ESR,MLCC; 10pF; 50V; C0G (NP0); ±2%; SMD
Mounting: SMD
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 10pF
Operating temperature: -55...125°C
Kind of capacitor: low ESR; MLCC
Capacitors features: high reliability
Case - mm: 1005
Case - inch: 0402
Tolerance: ±2%
Operating voltage: 50V
auf Bestellung 9900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.03 EUR
5900+0.01 EUR
8000+0.01 EUR
8400+0.01 EUR
Mindestbestellmenge: 2500
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HH15N100G500CT WTC_MLCC_HQ_Low_ESR_HH.pdf
HH15N100G500CT
Hersteller: WALSIN
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; low ESR,MLCC; 10pF; 50V; C0G (NP0); ±2%; SMD
Mounting: SMD
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 10pF
Operating temperature: -55...125°C
Kind of capacitor: low ESR; MLCC
Capacitors features: high reliability
Case - mm: 1005
Case - inch: 0402
Tolerance: ±2%
Operating voltage: 50V
Anzahl je Verpackung: 100 Stücke
auf Bestellung 9900 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2500+0.03 EUR
5900+0.01 EUR
8000+0.01 EUR
8400+0.01 EUR
10000+0.01 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
HH15N100J500CT WTC_MLCC_HQ_Low_ESR_HH.pdf
Hersteller: Walsin Technology Corporation
Description: CAP CER 10PF 50V C0G/NP0 0402
Packaging: Cut Tape (CT)
Tolerance: ±5%
Features: High Q, Low Loss, Ultra Low ESR
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 10 pF
auf Bestellung 24504 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
455+0.04 EUR
827+0.02 EUR
1359+0.01 EUR
2500+0.01 EUR
5000+0.01 EUR
Mindestbestellmenge: 100
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HH15N100J500CT WTC_MLCC_HQ_Low_ESR_HH.pdf
Hersteller: Walsin Technology Corporation
Description: CAP CER 10PF 50V C0G/NP0 0402
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Features: High Q, Low Loss, Ultra Low ESR
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 10 pF
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.01 EUR
Mindestbestellmenge: 10000
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HH15N101J500CT WTC_MLCC_HQ_Low_ESR_HH.pdf
Hersteller: Walsin Technology Corporation
Description: CAP CER 100PF 50V C0G/NP0 0402
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Features: High Q, Low Loss, Ultra Low ESR
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 100 pF
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.00 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
HH15N101J500CT WTC_MLCC_HQ_Low_ESR_HH.pdf
Hersteller: Walsin Technology Corporation
Description: CAP CER 100PF 50V C0G/NP0 0402
Packaging: Cut Tape (CT)
Tolerance: ±5%
Features: High Q, Low Loss, Ultra Low ESR
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 100 pF
auf Bestellung 14003 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
589+0.03 EUR
1031+0.02 EUR
1722+0.01 EUR
2500+0.01 EUR
5000+0.01 EUR
Mindestbestellmenge: 100
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IPT015N10N5ATMA1 Infineon-IPT015N10N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014ac94680661aff
IPT015N10N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 300A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+5.00 EUR
Mindestbestellmenge: 2000
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IPT015N10N5ATMA1 Infineon-IPT015N10N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014ac94680661aff
IPT015N10N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 300A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
auf Bestellung 5721 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.92 EUR
10+5.96 EUR
100+5.21 EUR
500+4.88 EUR
Mindestbestellmenge: 2
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IPT015N10NF2SATMA1 Infineon-IPT015N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183ef5e9b67212b
IPT015N10NF2SATMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 315A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 242 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
auf Bestellung 384 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.36 EUR
10+4.85 EUR
100+3.44 EUR
Mindestbestellmenge: 3
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IXFH15N100P IXFH15N100P.pdf
IXFH15N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 543W
Case: TO247-3
On-state resistance: 760mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.07 EUR
7+10.74 EUR
8+10.15 EUR
Mindestbestellmenge: 5
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IXFH15N100P IXFH15N100P.pdf
IXFH15N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 543W
Case: TO247-3
On-state resistance: 760mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+15.07 EUR
7+10.74 EUR
8+10.15 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFH15N100P
IXFH15N100P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 760mOhm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
auf Bestellung 155 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.07 EUR
30+12.71 EUR
120+10.88 EUR
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IXFH15N100Q3 IXF_15N100Q3.pdf
IXFH15N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IXFH15N100Q3 littelfuse-discrete-mosfets-ixf-15n100q3-datasheet?assetguid=2eb816c3-afba-4569-a822-bf202a29101a
IXFH15N100Q3
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 7.5A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
auf Bestellung 267 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.02 EUR
30+19.03 EUR
120+18.73 EUR
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IXFR15N100Q3 IXFR15N100Q3.pdf
IXFR15N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 400W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 400W
Case: ISOPLUS247™
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.65 EUR
Mindestbestellmenge: 4
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IXFR15N100Q3 IXFR15N100Q3.pdf
IXFR15N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 400W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 400W
Case: ISOPLUS247™
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+19.65 EUR
120+18.92 EUR
270+18.89 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
MCQ15N10YA-TP MCQ15N10YA(SOP-8).pdf
MCQ15N10YA-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.69 EUR
Mindestbestellmenge: 4000
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MCQ15N10YA-TP MCQ15N10YA(SOP-8).pdf
MCQ15N10YA-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH DFN3333
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
auf Bestellung 7697 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.83 EUR
10+1.80 EUR
100+1.21 EUR
500+0.95 EUR
1000+0.87 EUR
2000+0.80 EUR
Mindestbestellmenge: 7
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MCU15N10A-TP MCU15N10A(DPAK).pdf
MCU15N10A-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 100V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 8A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
auf Bestellung 1756 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.60 EUR
18+1.00 EUR
100+0.65 EUR
500+0.50 EUR
1000+0.45 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
MDD15N10D MDD15N10D000SD.pdf?rlkey=zfyir94x32hf5vdcbaml1i8q6&st=h672yjo0&dl=0
MDD15N10D
Hersteller: MDD
Description: MOSFET N 100V 15A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V
Power Dissipation (Max): 28W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.67 EUR
Mindestbestellmenge: 2500
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MGV1004R15N-10 mgv1004-series-datasheet
MGV1004R15N-10
Hersteller: Laird-Signal Integrity Products
Description: FIXED IND 150NH 43A 0.6MOHM SMD
Packaging: Tape & Reel (TR)
Tolerance: ±30%
Package / Case: Nonstandard
Size / Dimension: 0.433" L x 0.394" W (11.00mm x 10.00mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Molded
Operating Temperature: -55°C ~ 125°C
DC Resistance (DCR): 0.6mOhm Max
Ratings: AEC-Q200
Current - Saturation (Isat): 75A
Inductance Frequency - Test: 100 kHz
Height - Seated (Max): 0.173" (4.40mm)
Part Status: Active
Inductance: 150 nH
Current Rating (Amps): 43 A
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+1.41 EUR
1000+1.31 EUR
1500+1.25 EUR
Mindestbestellmenge: 500
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MGV1004R15N-10 mgv1004-series-datasheet
MGV1004R15N-10
Hersteller: Laird-Signal Integrity Products
Description: FIXED IND 150NH 43A 0.6MOHM SMD
Packaging: Cut Tape (CT)
Tolerance: ±30%
Package / Case: Nonstandard
Size / Dimension: 0.433" L x 0.394" W (11.00mm x 10.00mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Molded
Operating Temperature: -55°C ~ 125°C
DC Resistance (DCR): 0.6mOhm Max
Ratings: AEC-Q200
Current - Saturation (Isat): 75A
Inductance Frequency - Test: 100 kHz
Height - Seated (Max): 0.173" (4.40mm)
Part Status: Active
Inductance: 150 nH
Current Rating (Amps): 43 A
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.83 EUR
Mindestbestellmenge: 7
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MT15N100J500CT MT18B.pdf
MT15N100J500CT
Hersteller: WALSIN
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10pF; 50V; C0G (NP0); ±5%; SMD; 0402
Mounting: SMD
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 10pF
Manufacturer series: MT15
Operating temperature: -55...125°C
Kind of capacitor: MLCC
Case - mm: 1005
Case - inch: 0402
Tolerance: ±5%
Operating voltage: 50V
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.07 EUR
Mindestbestellmenge: 1000
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MT15N100J500CT MT18B.pdf
MT15N100J500CT
Hersteller: WALSIN
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10pF; 50V; C0G (NP0); ±5%; SMD; 0402
Mounting: SMD
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 10pF
Manufacturer series: MT15
Operating temperature: -55...125°C
Kind of capacitor: MLCC
Case - mm: 1005
Case - inch: 0402
Tolerance: ±5%
Operating voltage: 50V
Anzahl je Verpackung: 1000 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1000+0.07 EUR
17000+0.00 EUR
Mindestbestellmenge: 1000
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MT15N100J500CT WTC_MLCC_Automotive_MT.pdf
MT15N100J500CT
Hersteller: Walsin Technology Corporation
Description: CAP CER 10PF 50V C0G/NP0 0402
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Automotive
Ratings: AEC-Q200
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 10 pF
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.01 EUR
Mindestbestellmenge: 10000
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MT15N100J500CT WTC_MLCC_Automotive_MT.pdf
MT15N100J500CT
Hersteller: Walsin Technology Corporation
Description: CAP CER 10PF 50V C0G/NP0 0402
Packaging: Cut Tape (CT)
Tolerance: ±5%
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Automotive
Ratings: AEC-Q200
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 10 pF
auf Bestellung 18719 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
500+0.04 EUR
893+0.02 EUR
1670+0.01 EUR
2500+0.01 EUR
5000+0.01 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
MT15N101J500CT WTC_MLCC_Automotive_MT.pdf
MT15N101J500CT
Hersteller: Walsin Technology Corporation
Description: CAP CER 100PF 50V C0G/NP0 0402
Packaging: Cut Tape (CT)
Tolerance: ±5%
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Automotive
Ratings: AEC-Q200
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 100 pF
auf Bestellung 11190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
589+0.03 EUR
1031+0.02 EUR
1716+0.01 EUR
2500+0.01 EUR
5000+0.01 EUR
Mindestbestellmenge: 100
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NTMFS015N10MCLT1G ntmfs015n10mcl-d.pdf
NTMFS015N10MCLT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 10.5A/54A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 282µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13380 pF @ 50 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.97 EUR
Mindestbestellmenge: 1500
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NTMFS015N10MCLT1G ntmfs015n10mcl-d.pdf
NTMFS015N10MCLT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 10.5A/54A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 282µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13380 pF @ 50 V
auf Bestellung 2054 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
12+1.51 EUR
100+1.13 EUR
500+1.06 EUR
Mindestbestellmenge: 9
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NVMFS015N10MCLT1G nvmfs015n10mcl-d.pdf
NVMFS015N10MCLT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 10.5A/54A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 282µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.89 EUR
3000+0.81 EUR
4500+0.79 EUR
Mindestbestellmenge: 1500
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NVMFS015N10MCLT1G nvmfs015n10mcl-d.pdf
NVMFS015N10MCLT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 10.5A/54A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 282µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 5409 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.68 EUR
10+1.78 EUR
100+1.22 EUR
500+1.02 EUR
Mindestbestellmenge: 7
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PSMN015N10NS2_R2_00201 20230516171020ta7o3bGUZ1.pdf
Hersteller: Panjit International Inc.
Description: 100V/ 1.5M / TOLL FOR ESS/ BBU/
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 395A
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
auf Bestellung 574 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.98 EUR
10+10.25 EUR
100+7.57 EUR
500+6.65 EUR
Mindestbestellmenge: 2
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RF15N100J500CT WTC_MLCC_Microwave_RF.pdf
Hersteller: Walsin Technology Corporation
Description: CAP CER 10PF 50V C0G/NP0 0402
Tolerance: ±5%
Features: High Q, Low Loss, Ultra Low ESR
Packaging: Cut Tape (CT)
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 10 pF
auf Bestellung 15655 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
164+0.11 EUR
360+0.05 EUR
1000+0.02 EUR
Mindestbestellmenge: 91
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RF15N100J500CT WTC_MLCC_Microwave_RF.pdf
Hersteller: Walsin Technology Corporation
Description: CAP CER 10PF 50V C0G/NP0 0402
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Features: High Q, Low Loss, Ultra Low ESR
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 10 pF
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.02 EUR
Mindestbestellmenge: 10000
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STH315N10F7-2 sth315n10f7-2.pdf
STH315N10F7-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 418 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.10 EUR
10+7.30 EUR
100+5.90 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STH315N10F7-6 sth315n10f7-2.pdf
STH315N10F7-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2469 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.15 EUR
10+7.08 EUR
100+5.12 EUR
500+4.28 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STH315N10F7-6 sth315n10f7-2.pdf
STH315N10F7-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+4.17 EUR
Mindestbestellmenge: 1000
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STL115N10F7AG en.DM00333356.pdf
STL115N10F7AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 107A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 53A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 14938 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.30 EUR
10+3.51 EUR
100+2.43 EUR
500+1.97 EUR
1000+1.83 EUR
Mindestbestellmenge: 4
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STL115N10F7AG en.DM00333356.pdf
STL115N10F7AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 107A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 53A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.69 EUR
Mindestbestellmenge: 3000
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STP315N10F7 en.DM00096835.pdf
STP315N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 496 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.50 EUR
50+4.99 EUR
100+4.55 EUR
Mindestbestellmenge: 2
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STTFS015N10MCL sttfs015n10mcl-d.pdf
STTFS015N10MCL
Hersteller: onsemi
Description: -
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 3V @ 77µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V
auf Bestellung 472 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
12+1.48 EUR
100+1.03 EUR
Mindestbestellmenge: 9
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WMO15N10T1
WMO15N10T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 981 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
254+0.28 EUR
338+0.21 EUR
379+0.19 EUR
424+0.17 EUR
451+0.16 EUR
Mindestbestellmenge: 107
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YJD15N10A YJD15N10A.pdf
YJD15N10A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.5A
Pulsed drain current: 60A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
335+0.22 EUR
400+0.18 EUR
425+0.17 EUR
Mindestbestellmenge: 335
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500R15N100GV4T
Hersteller: N/A
N/A
auf Bestellung 32000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
501R15N101KV4T High_Voltage_MLCC.pdf
Hersteller: JOHANSON
SMD
auf Bestellung 86200 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
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