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EDZCUMTE616.8B Rohm Semiconductor edz_series_datasheet.pdf Description: TRANSIENT VOLT SUPPRESSOR SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
EDZCGJTE616.8B Rohm Semiconductor edz_series_datasheet.pdf Description: TRANSIENT VOLT SUPPRESSOR SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
BD3808FS-E2 Rohm Semiconductor Description: IC AUDIO PROCESSOR 22SOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
BD3808AFS-E2 Rohm Semiconductor Description: IC AUDIO PROCESSOR 22SOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
BU33TA2WHFV-TR BU33TA2WHFV-TR Rohm Semiconductor datasheet?p=BU33TA2WHFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 3.3V 200MA HVSOF5
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-HVSOF
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
BU33TA2WHFV-TR BU33TA2WHFV-TR Rohm Semiconductor datasheet?p=BU33TA2WHFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 3.3V 200MA HVSOF5
Packaging: Cut Tape (CT)
Package / Case: SOT-665
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-HVSOF
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Current, Over Temperature
auf Bestellung 3362 Stücke:
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25+ 1.05 EUR
100+ 0.86 EUR
250+ 0.8 EUR
500+ 0.68 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 14
BU33UC3WG-TR BU33UC3WG-TR Rohm Semiconductor BUxxUC3WG.pdf Description: IC REG LINEAR 3.3V 300MA 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: On/Off
Part Status: Not For New Designs
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.22V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 3000 Stücke:
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3000+0.32 EUR
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BU33UC3WG-TR BU33UC3WG-TR Rohm Semiconductor BUxxUC3WG.pdf Description: IC REG LINEAR 3.3V 300MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: On/Off
Part Status: Not For New Designs
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.22V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 3571 Stücke:
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23+ 0.78 EUR
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100+ 0.58 EUR
250+ 0.54 EUR
500+ 0.46 EUR
1000+ 0.35 EUR
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BU33SA4WGWL-E2 BU33SA4WGWL-E2 Rohm Semiconductor datasheet?p=BU33SA4WGWL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LIN 3.3V 200MA 4UCSP50L1
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: UCSP50L1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 45dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
auf Bestellung 3000 Stücke:
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3000+0.33 EUR
Mindestbestellmenge: 3000
BU33SA4WGWL-E2 BU33SA4WGWL-E2 Rohm Semiconductor datasheet?p=BU33SA4WGWL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LIN 3.3V 200MA 4UCSP50L1
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: UCSP50L1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 45dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
auf Bestellung 3555 Stücke:
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100+ 0.6 EUR
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500+ 0.48 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 19
BU33JA2DG-CTR BU33JA2DG-CTR Rohm Semiconductor Description: IC REG LINEAR 3.3V 100MA 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.155V @ 100mA
Protection Features: Over Current, Over Temperature
auf Bestellung 6000 Stücke:
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3000+0.64 EUR
6000+ 0.61 EUR
Mindestbestellmenge: 3000
BU33JA2DG-CTR BU33JA2DG-CTR Rohm Semiconductor Description: IC REG LINEAR 3.3V 100MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.155V @ 100mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10779 Stücke:
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1000+ 0.69 EUR
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BU33JA2VG-CGTR BU33JA2VG-CGTR Rohm Semiconductor datasheet?p=BU33JA2VG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 3.3V 200MA 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.155V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Produkt ist nicht verfügbar
BU33JA2VG-CGTR BU33JA2VG-CGTR Rohm Semiconductor datasheet?p=BU33JA2VG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 3.3V 200MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.155V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
auf Bestellung 2546 Stücke:
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13+ 1.42 EUR
25+ 1.34 EUR
100+ 1.1 EUR
250+ 1.03 EUR
500+ 0.91 EUR
1000+ 0.72 EUR
Mindestbestellmenge: 12
SFR03EZPJ101 SFR03EZPJ101 Rohm Semiconductor sfr-e.pdf Description: RES 100 OHM 5% 1/10W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 100 Ohms
Produkt ist nicht verfügbar
SFR03EZPJ101 SFR03EZPJ101 Rohm Semiconductor sfr-e.pdf Description: RES 100 OHM 5% 1/10W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 100 Ohms
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
91+0.19 EUR
103+ 0.17 EUR
265+ 0.067 EUR
1000+ 0.029 EUR
2500+ 0.025 EUR
Mindestbestellmenge: 91
LTR100JZPF1R50 LTR100JZPF1R50 Rohm Semiconductor ltr-e.pdf Description: RES 1.5 OHM 1% 2W WIDE 2512
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 1.5 Ohms
Produkt ist nicht verfügbar
LTR100JZPF1R50 LTR100JZPF1R50 Rohm Semiconductor ltr-e.pdf Description: RES 1.5 OHM 1% 2W WIDE 2512
Packaging: Cut Tape (CT)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 1.5 Ohms
auf Bestellung 3980 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.23 EUR
20+ 0.91 EUR
50+ 0.65 EUR
100+ 0.53 EUR
500+ 0.38 EUR
1000+ 0.3 EUR
Mindestbestellmenge: 15
R6009RND3TL1 R6009RND3TL1 Rohm Semiconductor r6009rnd3tl1-e.pdf Description: 600V 9A TO-252, PRESTOMOS WITH I
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V
auf Bestellung 2500 Stücke:
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2500+0.57 EUR
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R6009RND3TL1 R6009RND3TL1 Rohm Semiconductor r6009rnd3tl1-e.pdf Description: 600V 9A TO-252, PRESTOMOS WITH I
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V
auf Bestellung 2595 Stücke:
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100+ 1.82 EUR
250+ 1.71 EUR
500+ 1.49 EUR
1000+ 1.24 EUR
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UT6J3TCR UT6J3TCR Rohm Semiconductor Description: MOSFET 2P-CH 20V 3A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.18 EUR
18+ 1.02 EUR
100+ 0.71 EUR
500+ 0.59 EUR
1000+ 0.5 EUR
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RF4P060BGTCR RF4P060BGTCR Rohm Semiconductor rf4p060bgtcr-e.pdf Description: NCH 100V 6A, HUML2020L8, POWER M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.55 EUR
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RF4P060BGTCR RF4P060BGTCR Rohm Semiconductor rf4p060bgtcr-e.pdf Description: NCH 100V 6A, HUML2020L8, POWER M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
auf Bestellung 3000 Stücke:
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13+1.46 EUR
14+ 1.26 EUR
100+ 0.88 EUR
500+ 0.73 EUR
1000+ 0.62 EUR
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RF4P025ATTCR RF4P025ATTCR Rohm Semiconductor rf4p025attcr-e.pdf Description: PCH -100V -2.5A POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.5A, 10V
Produkt ist nicht verfügbar
RF4P025ATTCR RF4P025ATTCR Rohm Semiconductor rf4p025attcr-e.pdf Description: PCH -100V -2.5A POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.5A, 10V
auf Bestellung 2951 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.41 EUR
15+ 1.22 EUR
100+ 0.85 EUR
500+ 0.71 EUR
1000+ 0.6 EUR
Mindestbestellmenge: 13
BA2901YF-MGE2 BA2901YF-MGE2 Rohm Semiconductor datasheet?p=BA2901YF-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Produkt ist nicht verfügbar
BA2901YF-MGE2 BA2901YF-MGE2 Rohm Semiconductor datasheet?p=BA2901YF-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.13 EUR
10+ 2.81 EUR
25+ 2.65 EUR
100+ 2.26 EUR
250+ 2.12 EUR
500+ 1.85 EUR
1000+ 1.54 EUR
Mindestbestellmenge: 6
ESR10EZPF4991 ESR10EZPF4991 Rohm Semiconductor esr-e.pdf Description: RES SMD 4.99K OHM 1% 0.4W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.99 kOhms
Produkt ist nicht verfügbar
ESR10EZPF4991 ESR10EZPF4991 Rohm Semiconductor esr-e.pdf Description: RES SMD 4.99K OHM 1% 0.4W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.99 kOhms
auf Bestellung 4900 Stücke:
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50+0.35 EUR
99+ 0.18 EUR
147+ 0.12 EUR
171+ 0.1 EUR
500+ 0.074 EUR
1000+ 0.065 EUR
Mindestbestellmenge: 50
BH8100FV-E2 Rohm Semiconductor Description: CUSTOM; FOR MARSHALL & STYRKER O
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
KTR10EZPF5362 KTR10EZPF5362 Rohm Semiconductor ktr-e.pdf Description: RES SMD 53.6K OHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 53.6 kOhms
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53+0.33 EUR
105+ 0.17 EUR
156+ 0.11 EUR
182+ 0.097 EUR
500+ 0.07 EUR
1000+ 0.062 EUR
Mindestbestellmenge: 53
DTC143EE3TL DTC143EE3TL Rohm Semiconductor dtc143ee3-e.pdf Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
DTC143EE3TL DTC143EE3TL Rohm Semiconductor dtc143ee3-e.pdf Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 1790 Stücke:
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BD65494MUV-E2 BD65494MUV-E2 Rohm Semiconductor datasheet?p=BD65494MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC MOTOR DRIVER 2.5V-3.6V 16VQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -30°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.5V ~ 3.6V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2V ~ 9V
Supplier Device Package: VQFN016V3030
Motor Type - AC, DC: Brushed DC
Part Status: Active
Produkt ist nicht verfügbar
BD65494MUV-E2 BD65494MUV-E2 Rohm Semiconductor datasheet?p=BD65494MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC MOTOR DRIVER 2.5V-3.6V 16VQFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -30°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.5V ~ 3.6V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2V ~ 9V
Supplier Device Package: VQFN016V3030
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 2999 Stücke:
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100+ 2.72 EUR
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BD2801MUV-E2 BD2801MUV-E2 Rohm Semiconductor datasheet?p=BD2801MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 3CH BUILT-IN CHARGE PUMP LINEAR
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: DC DC Controller
Operating Temperature: 0°C ~ 70°C
Applications: General Purpose
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: VQFN016V3030
Part Status: Active
Voltage - Supply (Min): 3.135V
Voltage - Supply (Max): 3.465V
Produkt ist nicht verfügbar
BD2801MUV-E2 BD2801MUV-E2 Rohm Semiconductor datasheet?p=BD2801MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 3CH BUILT-IN CHARGE PUMP LINEAR
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: DC DC Controller
Operating Temperature: 0°C ~ 70°C
Applications: General Purpose
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: VQFN016V3030
Part Status: Active
Voltage - Supply (Min): 3.135V
Voltage - Supply (Max): 3.465V
auf Bestellung 2350 Stücke:
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500+ 1.56 EUR
1000+ 1.29 EUR
Mindestbestellmenge: 7
LTR100JZPF4300 LTR100JZPF4300 Rohm Semiconductor ltr-e.pdf Description: RES 430 OHM 1% 2W 1225
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 430 Ohms
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4000+0.29 EUR
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LTR100JZPF4300 LTR100JZPF4300 Rohm Semiconductor ltr-e.pdf Description: RES 430 OHM 1% 2W 1225
Packaging: Cut Tape (CT)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 430 Ohms
auf Bestellung 4000 Stücke:
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1000+ 0.3 EUR
Mindestbestellmenge: 15
SFR03EZPF4300 SFR03EZPF4300 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 430 Ohms
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5000+0.029 EUR
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SFR03EZPF4300 SFR03EZPF4300 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 430 Ohms
auf Bestellung 9995 Stücke:
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ESR18EZPF4300 ESR18EZPF4300 Rohm Semiconductor esr-e.pdf Description: RES SMD 430 OHM 1% 1/2W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 430 Ohms
Produkt ist nicht verfügbar
ESR18EZPF4300 ESR18EZPF4300 Rohm Semiconductor esr-e.pdf Description: RES SMD 430 OHM 1% 1/2W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 430 Ohms
Produkt ist nicht verfügbar
SDR10EZPF4300 SDR10EZPF4300 Rohm Semiconductor Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 430 Ohms
Produkt ist nicht verfügbar
SDR10EZPF4300 SDR10EZPF4300 Rohm Semiconductor Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 430 Ohms
Produkt ist nicht verfügbar
SIR-563ST3F Rohm Semiconductor datasheet?p=SIR-563ST3F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: INFRARED LIGHT EMITTING DIODES T
Packaging: Bulk
Package / Case: Radial
Wavelength: 940nm
Mounting Type: Through Hole
Type: Infrared (IR)
Orientation: Top View
Operating Temperature: -25°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.34V
Viewing Angle: 30°
Current - DC Forward (If) (Max): 100mA
Radiant Intensity (Ie) Min @ If: 8.2mW/sr @ 50mA
Part Status: Active
Produkt ist nicht verfügbar
BH28MA3WHFV-TR BH28MA3WHFV-TR Rohm Semiconductor datasheet?p=BH28MA3WHFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 2.8V 300MA 6HVSOF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-HVSOF
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.09V @ 100mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
BH28SA3WGUT-E2 BH28SA3WGUT-E2 Rohm Semiconductor Description: IC REG LIN 2.8V 150MA VCSP60N1
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: VCSP60N1
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
R6035KNZC17 R6035KNZC17 Rohm Semiconductor datasheet?p=R6035KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 35A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 282 Stücke:
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R6030KNZC17 R6030KNZC17 Rohm Semiconductor datasheet?p=R6030KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
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R6030JNZC17 R6030JNZC17 Rohm Semiconductor datasheet?p=R6030JNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Bag
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
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R6077VNZC17 R6077VNZC17 Rohm Semiconductor datasheet?p=R6077VNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 29A TO-3PF, PRESTOMOS WITH
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 23A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1.9mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
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R6515KNZC17 R6515KNZC17 Rohm Semiconductor datasheet?p=R6515KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 15A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
auf Bestellung 300 Stücke:
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R6530KNZC17 R6530KNZC17 Rohm Semiconductor datasheet?p=R6530KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 30A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 960µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
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R6535ENZC17 R6535ENZC17 Rohm Semiconductor datasheet?p=R6535ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 35A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.21mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.13 EUR
10+ 10.39 EUR
100+ 8.66 EUR
Mindestbestellmenge: 2
R6530ENZC17 R6530ENZC17 Rohm Semiconductor datasheet?p=R6530ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 30A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 960µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.03 EUR
10+ 8.6 EUR
100+ 7.17 EUR
Mindestbestellmenge: 2
R6524KNZC17 R6524KNZC17 Rohm Semiconductor datasheet?p=R6524KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 24A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.21 EUR
10+ 10.08 EUR
100+ 8.26 EUR
Mindestbestellmenge: 2
SCT4036KEC11 SCT4036KEC11 Rohm Semiconductor datasheet?p=SCT4036KE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1200V, 36M, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
auf Bestellung 4703 Stücke:
Lieferzeit 10-14 Tag (e)
1+33.53 EUR
30+ 22.35 EUR
120+ 22.28 EUR
SCT4026DEHRC11 SCT4026DEHRC11 Rohm Semiconductor datasheet?p=SCT4026DEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 750V, 56A, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 440 Stücke:
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2+17.58 EUR
30+ 11.17 EUR
120+ 9.95 EUR
Mindestbestellmenge: 2
SCT4036KEHRC11 SCT4036KEHRC11 Rohm Semiconductor datasheet?p=SCT4036KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1200V, 43A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 398 Stücke:
Lieferzeit 10-14 Tag (e)
1+34.36 EUR
10+ 25.68 EUR
EDZCUMTE616.8B edz_series_datasheet.pdf
Hersteller: Rohm Semiconductor
Description: TRANSIENT VOLT SUPPRESSOR SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
EDZCGJTE616.8B edz_series_datasheet.pdf
Hersteller: Rohm Semiconductor
Description: TRANSIENT VOLT SUPPRESSOR SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
BD3808FS-E2
Hersteller: Rohm Semiconductor
Description: IC AUDIO PROCESSOR 22SOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
BD3808AFS-E2
Hersteller: Rohm Semiconductor
Description: IC AUDIO PROCESSOR 22SOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
BU33TA2WHFV-TR datasheet?p=BU33TA2WHFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU33TA2WHFV-TR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 200MA HVSOF5
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-HVSOF
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
BU33TA2WHFV-TR datasheet?p=BU33TA2WHFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU33TA2WHFV-TR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 200MA HVSOF5
Packaging: Cut Tape (CT)
Package / Case: SOT-665
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-HVSOF
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Current, Over Temperature
auf Bestellung 3362 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.27 EUR
16+ 1.12 EUR
25+ 1.05 EUR
100+ 0.86 EUR
250+ 0.8 EUR
500+ 0.68 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 14
BU33UC3WG-TR BUxxUC3WG.pdf
BU33UC3WG-TR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 300MA 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: On/Off
Part Status: Not For New Designs
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.22V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.32 EUR
Mindestbestellmenge: 3000
BU33UC3WG-TR BUxxUC3WG.pdf
BU33UC3WG-TR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 300MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: On/Off
Part Status: Not For New Designs
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.22V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 3571 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.92 EUR
23+ 0.78 EUR
25+ 0.73 EUR
100+ 0.58 EUR
250+ 0.54 EUR
500+ 0.46 EUR
1000+ 0.35 EUR
Mindestbestellmenge: 20
BU33SA4WGWL-E2 datasheet?p=BU33SA4WGWL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU33SA4WGWL-E2
Hersteller: Rohm Semiconductor
Description: IC REG LIN 3.3V 200MA 4UCSP50L1
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: UCSP50L1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 45dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.33 EUR
Mindestbestellmenge: 3000
BU33SA4WGWL-E2 datasheet?p=BU33SA4WGWL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU33SA4WGWL-E2
Hersteller: Rohm Semiconductor
Description: IC REG LIN 3.3V 200MA 4UCSP50L1
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: UCSP50L1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 45dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
auf Bestellung 3555 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.95 EUR
22+ 0.81 EUR
25+ 0.76 EUR
100+ 0.6 EUR
250+ 0.56 EUR
500+ 0.48 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 19
BU33JA2DG-CTR
BU33JA2DG-CTR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 100MA 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.155V @ 100mA
Protection Features: Over Current, Over Temperature
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.64 EUR
6000+ 0.61 EUR
Mindestbestellmenge: 3000
BU33JA2DG-CTR
BU33JA2DG-CTR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 100MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.155V @ 100mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10779 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.51 EUR
14+ 1.35 EUR
25+ 1.28 EUR
100+ 1.05 EUR
250+ 0.98 EUR
500+ 0.87 EUR
1000+ 0.69 EUR
Mindestbestellmenge: 12
BU33JA2VG-CGTR datasheet?p=BU33JA2VG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU33JA2VG-CGTR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 200MA 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.155V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Produkt ist nicht verfügbar
BU33JA2VG-CGTR datasheet?p=BU33JA2VG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU33JA2VG-CGTR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 200MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.155V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
auf Bestellung 2546 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.58 EUR
13+ 1.42 EUR
25+ 1.34 EUR
100+ 1.1 EUR
250+ 1.03 EUR
500+ 0.91 EUR
1000+ 0.72 EUR
Mindestbestellmenge: 12
SFR03EZPJ101 sfr-e.pdf
SFR03EZPJ101
Hersteller: Rohm Semiconductor
Description: RES 100 OHM 5% 1/10W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 100 Ohms
Produkt ist nicht verfügbar
SFR03EZPJ101 sfr-e.pdf
SFR03EZPJ101
Hersteller: Rohm Semiconductor
Description: RES 100 OHM 5% 1/10W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 100 Ohms
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
91+0.19 EUR
103+ 0.17 EUR
265+ 0.067 EUR
1000+ 0.029 EUR
2500+ 0.025 EUR
Mindestbestellmenge: 91
LTR100JZPF1R50 ltr-e.pdf
LTR100JZPF1R50
Hersteller: Rohm Semiconductor
Description: RES 1.5 OHM 1% 2W WIDE 2512
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 1.5 Ohms
Produkt ist nicht verfügbar
LTR100JZPF1R50 ltr-e.pdf
LTR100JZPF1R50
Hersteller: Rohm Semiconductor
Description: RES 1.5 OHM 1% 2W WIDE 2512
Packaging: Cut Tape (CT)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 1.5 Ohms
auf Bestellung 3980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.23 EUR
20+ 0.91 EUR
50+ 0.65 EUR
100+ 0.53 EUR
500+ 0.38 EUR
1000+ 0.3 EUR
Mindestbestellmenge: 15
R6009RND3TL1 r6009rnd3tl1-e.pdf
R6009RND3TL1
Hersteller: Rohm Semiconductor
Description: 600V 9A TO-252, PRESTOMOS WITH I
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.57 EUR
Mindestbestellmenge: 2500
R6009RND3TL1 r6009rnd3tl1-e.pdf
R6009RND3TL1
Hersteller: Rohm Semiconductor
Description: 600V 9A TO-252, PRESTOMOS WITH I
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V
auf Bestellung 2595 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.52 EUR
10+ 2.26 EUR
25+ 2.13 EUR
100+ 1.82 EUR
250+ 1.71 EUR
500+ 1.49 EUR
1000+ 1.24 EUR
Mindestbestellmenge: 7
UT6J3TCR
UT6J3TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 20V 3A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.18 EUR
18+ 1.02 EUR
100+ 0.71 EUR
500+ 0.59 EUR
1000+ 0.5 EUR
Mindestbestellmenge: 15
RF4P060BGTCR rf4p060bgtcr-e.pdf
RF4P060BGTCR
Hersteller: Rohm Semiconductor
Description: NCH 100V 6A, HUML2020L8, POWER M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.55 EUR
Mindestbestellmenge: 3000
RF4P060BGTCR rf4p060bgtcr-e.pdf
RF4P060BGTCR
Hersteller: Rohm Semiconductor
Description: NCH 100V 6A, HUML2020L8, POWER M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.46 EUR
14+ 1.26 EUR
100+ 0.88 EUR
500+ 0.73 EUR
1000+ 0.62 EUR
Mindestbestellmenge: 13
RF4P025ATTCR rf4p025attcr-e.pdf
RF4P025ATTCR
Hersteller: Rohm Semiconductor
Description: PCH -100V -2.5A POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.5A, 10V
Produkt ist nicht verfügbar
RF4P025ATTCR rf4p025attcr-e.pdf
RF4P025ATTCR
Hersteller: Rohm Semiconductor
Description: PCH -100V -2.5A POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.5A, 10V
auf Bestellung 2951 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.41 EUR
15+ 1.22 EUR
100+ 0.85 EUR
500+ 0.71 EUR
1000+ 0.6 EUR
Mindestbestellmenge: 13
BA2901YF-MGE2 datasheet?p=BA2901YF-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA2901YF-MGE2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Produkt ist nicht verfügbar
BA2901YF-MGE2 datasheet?p=BA2901YF-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA2901YF-MGE2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.13 EUR
10+ 2.81 EUR
25+ 2.65 EUR
100+ 2.26 EUR
250+ 2.12 EUR
500+ 1.85 EUR
1000+ 1.54 EUR
Mindestbestellmenge: 6
ESR10EZPF4991 esr-e.pdf
ESR10EZPF4991
Hersteller: Rohm Semiconductor
Description: RES SMD 4.99K OHM 1% 0.4W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.99 kOhms
Produkt ist nicht verfügbar
ESR10EZPF4991 esr-e.pdf
ESR10EZPF4991
Hersteller: Rohm Semiconductor
Description: RES SMD 4.99K OHM 1% 0.4W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.99 kOhms
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
50+0.35 EUR
99+ 0.18 EUR
147+ 0.12 EUR
171+ 0.1 EUR
500+ 0.074 EUR
1000+ 0.065 EUR
Mindestbestellmenge: 50
BH8100FV-E2
Hersteller: Rohm Semiconductor
Description: CUSTOM; FOR MARSHALL & STYRKER O
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
KTR10EZPF5362 ktr-e.pdf
KTR10EZPF5362
Hersteller: Rohm Semiconductor
Description: RES SMD 53.6K OHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 53.6 kOhms
auf Bestellung 3505 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
53+0.33 EUR
105+ 0.17 EUR
156+ 0.11 EUR
182+ 0.097 EUR
500+ 0.07 EUR
1000+ 0.062 EUR
Mindestbestellmenge: 53
DTC143EE3TL dtc143ee3-e.pdf
DTC143EE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
DTC143EE3TL dtc143ee3-e.pdf
DTC143EE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 1790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
48+0.37 EUR
71+ 0.25 EUR
107+ 0.17 EUR
500+ 0.13 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 48
BD65494MUV-E2 datasheet?p=BD65494MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD65494MUV-E2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 2.5V-3.6V 16VQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -30°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.5V ~ 3.6V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2V ~ 9V
Supplier Device Package: VQFN016V3030
Motor Type - AC, DC: Brushed DC
Part Status: Active
Produkt ist nicht verfügbar
BD65494MUV-E2 datasheet?p=BD65494MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD65494MUV-E2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 2.5V-3.6V 16VQFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -30°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.5V ~ 3.6V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2V ~ 9V
Supplier Device Package: VQFN016V3030
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 2999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.77 EUR
10+ 3.39 EUR
25+ 3.2 EUR
100+ 2.72 EUR
250+ 2.56 EUR
500+ 2.24 EUR
1000+ 1.85 EUR
Mindestbestellmenge: 5
BD2801MUV-E2 datasheet?p=BD2801MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD2801MUV-E2
Hersteller: Rohm Semiconductor
Description: 3CH BUILT-IN CHARGE PUMP LINEAR
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: DC DC Controller
Operating Temperature: 0°C ~ 70°C
Applications: General Purpose
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: VQFN016V3030
Part Status: Active
Voltage - Supply (Min): 3.135V
Voltage - Supply (Max): 3.465V
Produkt ist nicht verfügbar
BD2801MUV-E2 datasheet?p=BD2801MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD2801MUV-E2
Hersteller: Rohm Semiconductor
Description: 3CH BUILT-IN CHARGE PUMP LINEAR
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: DC DC Controller
Operating Temperature: 0°C ~ 70°C
Applications: General Purpose
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: VQFN016V3030
Part Status: Active
Voltage - Supply (Min): 3.135V
Voltage - Supply (Max): 3.465V
auf Bestellung 2350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.62 EUR
10+ 2.35 EUR
25+ 2.22 EUR
100+ 1.89 EUR
250+ 1.78 EUR
500+ 1.56 EUR
1000+ 1.29 EUR
Mindestbestellmenge: 7
LTR100JZPF4300 ltr-e.pdf
LTR100JZPF4300
Hersteller: Rohm Semiconductor
Description: RES 430 OHM 1% 2W 1225
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 430 Ohms
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.29 EUR
Mindestbestellmenge: 4000
LTR100JZPF4300 ltr-e.pdf
LTR100JZPF4300
Hersteller: Rohm Semiconductor
Description: RES 430 OHM 1% 2W 1225
Packaging: Cut Tape (CT)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 430 Ohms
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.23 EUR
20+ 0.91 EUR
50+ 0.65 EUR
100+ 0.53 EUR
500+ 0.38 EUR
1000+ 0.3 EUR
Mindestbestellmenge: 15
SFR03EZPF4300 sfr-e.pdf
SFR03EZPF4300
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 430 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.029 EUR
Mindestbestellmenge: 5000
SFR03EZPF4300 sfr-e.pdf
SFR03EZPF4300
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 430 Ohms
auf Bestellung 9995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
72+0.25 EUR
81+ 0.22 EUR
210+ 0.084 EUR
1000+ 0.037 EUR
2500+ 0.032 EUR
Mindestbestellmenge: 72
ESR18EZPF4300 esr-e.pdf
ESR18EZPF4300
Hersteller: Rohm Semiconductor
Description: RES SMD 430 OHM 1% 1/2W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 430 Ohms
Produkt ist nicht verfügbar
ESR18EZPF4300 esr-e.pdf
ESR18EZPF4300
Hersteller: Rohm Semiconductor
Description: RES SMD 430 OHM 1% 1/2W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 430 Ohms
Produkt ist nicht verfügbar
SDR10EZPF4300
SDR10EZPF4300
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 430 Ohms
Produkt ist nicht verfügbar
SDR10EZPF4300
SDR10EZPF4300
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 430 Ohms
Produkt ist nicht verfügbar
SIR-563ST3F datasheet?p=SIR-563ST3F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: Rohm Semiconductor
Description: INFRARED LIGHT EMITTING DIODES T
Packaging: Bulk
Package / Case: Radial
Wavelength: 940nm
Mounting Type: Through Hole
Type: Infrared (IR)
Orientation: Top View
Operating Temperature: -25°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.34V
Viewing Angle: 30°
Current - DC Forward (If) (Max): 100mA
Radiant Intensity (Ie) Min @ If: 8.2mW/sr @ 50mA
Part Status: Active
Produkt ist nicht verfügbar
BH28MA3WHFV-TR datasheet?p=BH28MA3WHFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BH28MA3WHFV-TR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 2.8V 300MA 6HVSOF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-HVSOF
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.09V @ 100mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
BH28SA3WGUT-E2
BH28SA3WGUT-E2
Hersteller: Rohm Semiconductor
Description: IC REG LIN 2.8V 150MA VCSP60N1
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: VCSP60N1
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
R6035KNZC17 datasheet?p=R6035KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6035KNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 35A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 282 Stücke:
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2+12.13 EUR
10+ 10.39 EUR
100+ 8.66 EUR
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R6030KNZC17 datasheet?p=R6030KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6030KNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
auf Bestellung 300 Stücke:
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2+11.63 EUR
10+ 9.97 EUR
100+ 8.31 EUR
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R6030JNZC17 datasheet?p=R6030JNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6030JNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Bag
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 300 Stücke:
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2+11.69 EUR
10+ 10.01 EUR
100+ 8.34 EUR
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R6077VNZC17 datasheet?p=R6077VNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6077VNZC17
Hersteller: Rohm Semiconductor
Description: 600V 29A TO-3PF, PRESTOMOS WITH
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 23A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1.9mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
auf Bestellung 420 Stücke:
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2+15.26 EUR
10+ 10.48 EUR
100+ 7.77 EUR
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R6515KNZC17 datasheet?p=R6515KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6515KNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 15A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
auf Bestellung 300 Stücke:
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3+8.76 EUR
10+ 7.86 EUR
100+ 6.44 EUR
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R6530KNZC17 datasheet?p=R6530KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6530KNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 30A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 960µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
auf Bestellung 300 Stücke:
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2+10.03 EUR
10+ 8.6 EUR
100+ 7.17 EUR
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R6535ENZC17 datasheet?p=R6535ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6535ENZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 35A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.21mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 300 Stücke:
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2+12.13 EUR
10+ 10.39 EUR
100+ 8.66 EUR
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R6530ENZC17 datasheet?p=R6530ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6530ENZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 30A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 960µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 300 Stücke:
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Anzahl Preis ohne MwSt
2+10.03 EUR
10+ 8.6 EUR
100+ 7.17 EUR
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R6524KNZC17 datasheet?p=R6524KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6524KNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 24A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
auf Bestellung 300 Stücke:
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2+11.21 EUR
10+ 10.08 EUR
100+ 8.26 EUR
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SCT4036KEC11 datasheet?p=SCT4036KE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4036KEC11
Hersteller: Rohm Semiconductor
Description: 1200V, 36M, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
auf Bestellung 4703 Stücke:
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1+33.53 EUR
30+ 22.35 EUR
120+ 22.28 EUR
SCT4026DEHRC11 datasheet?p=SCT4026DEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4026DEHRC11
Hersteller: Rohm Semiconductor
Description: 750V, 56A, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 440 Stücke:
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2+17.58 EUR
30+ 11.17 EUR
120+ 9.95 EUR
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SCT4036KEHRC11 datasheet?p=SCT4036KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4036KEHRC11
Hersteller: Rohm Semiconductor
Description: 1200V, 43A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 398 Stücke:
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Anzahl Preis ohne MwSt
1+34.36 EUR
10+ 25.68 EUR
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