R6009RND3TL1 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: 600V 9A TO-252, PRESTOMOS WITH I
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V
Description: 600V 9A TO-252, PRESTOMOS WITH I
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.57 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details R6009RND3TL1 Rohm Semiconductor
Description: 600V 9A TO-252, PRESTOMOS WITH I, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 7V @ 5.5mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V.
Weitere Produktangebote R6009RND3TL1 nach Preis ab 1.14 EUR bis 2.52 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
R6009RND3TL1 | Hersteller : ROHM Semiconductor | MOSFETs POWER MOSFET SUITABLE F/SWITCH |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
R6009RND3TL1 | Hersteller : Rohm Semiconductor |
Description: 600V 9A TO-252, PRESTOMOS WITH I Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 7V @ 5.5mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V |
auf Bestellung 2595 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
R6009RND3TL1 | Hersteller : ROHM |
Description: ROHM - R6009RND3TL1 - Leistungs-MOSFET, n-Kanal, 600 V, 9 A, 0.51 ohm, TO-252, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: Y-EX Dauer-Drainstrom Id: 9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 7V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: TO-252 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.51ohm SVHC: Boric acid (14-Jun-2023) |
auf Bestellung 184 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
R6009RND3TL1 | Hersteller : ROHM |
Description: ROHM - R6009RND3TL1 - Leistungs-MOSFET, n-Kanal, 600 V, 9 A, 0.51 ohm, TO-252, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: Y-EX Dauer-Drainstrom Id: 9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 7V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: TO-252 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.51ohm SVHC: Boric acid (14-Jun-2023) |
auf Bestellung 184 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
R6009RND3TL1 | Hersteller : Rohm Semiconductor | Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
R6009RND3TL1 | Hersteller : Rohm Semiconductor | Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
|