Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (99829) > Seite 260 nach 1664
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2SD2657KT146 | Rohm Semiconductor |
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auf Bestellung 38 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD2662T100 | Rohm Semiconductor |
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auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD2670TL | Rohm Semiconductor |
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auf Bestellung 5291 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD2675TL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 320MHz Supplier Device Package: TSMT3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 500 mW |
auf Bestellung 1488 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD2704KT146 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 4ma, 2V Frequency - Transition: 35MHz Supplier Device Package: SMT3 Part Status: Active Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 200 mW |
auf Bestellung 43955 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA143ZMT2L | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 14194 Stücke: Lieferzeit 10-14 Tag (e) |
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DTB143TKT146 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms |
Produkt ist nicht verfügbar |
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DTB513ZETL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTB713ZMT2L | Rohm Semiconductor |
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auf Bestellung 12624 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC614TKT146 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms |
auf Bestellung 3987 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC614TUT106 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms |
auf Bestellung 299 Stücke: Lieferzeit 10-14 Tag (e) |
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EM6K6T2R | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 300mA Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: EMT6 Part Status: Active |
auf Bestellung 11517 Stücke: Lieferzeit 10-14 Tag (e) |
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EMD29T2R | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 120mW Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 12V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 100mA, 2V Frequency - Transition: 250MHz, 260MHz Resistor - Base (R1): 1kOhms, 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: EMT6 |
auf Bestellung 1806 Stücke: Lieferzeit 10-14 Tag (e) |
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EMD4T2R | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 47kOhms, 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 |
auf Bestellung 5974 Stücke: Lieferzeit 10-14 Tag (e) |
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EMD5T2R | Rohm Semiconductor |
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auf Bestellung 22781 Stücke: Lieferzeit 10-14 Tag (e) |
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EMX18T2R | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V Frequency - Transition: 320MHz Supplier Device Package: EMT6 Part Status: Active |
auf Bestellung 16268 Stücke: Lieferzeit 10-14 Tag (e) |
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EMZ7T2R | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V Frequency - Transition: 320MHz, 260MHz Supplier Device Package: EMT6 Part Status: Active |
auf Bestellung 15741 Stücke: Lieferzeit 10-14 Tag (e) |
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IMD3AT108 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SMT6 |
auf Bestellung 8857 Stücke: Lieferzeit 10-14 Tag (e) |
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RSF010P03TL | Rohm Semiconductor |
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auf Bestellung 5039 Stücke: Lieferzeit 10-14 Tag (e) |
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RSL020P03TR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V Power Dissipation (Max): 1W (Ta) Supplier Device Package: TUMT6 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V |
auf Bestellung 8261 Stücke: Lieferzeit 10-14 Tag (e) |
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RTR020N05TL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V |
auf Bestellung 4998 Stücke: Lieferzeit 10-14 Tag (e) |
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RTR040N03TL | Rohm Semiconductor |
![]() ![]() Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V |
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RUE003N02TL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: EMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V |
auf Bestellung 73963 Stücke: Lieferzeit 10-14 Tag (e) |
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RUM003N02T2L | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: VMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V |
auf Bestellung 194 Stücke: Lieferzeit 10-14 Tag (e) |
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UMX18NTN | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V Frequency - Transition: 320MHz Supplier Device Package: UMT6 Part Status: Active |
auf Bestellung 106 Stücke: Lieferzeit 10-14 Tag (e) |
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US5U3TR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SMD (5 Leads), Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TUMT5 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): 12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V |
auf Bestellung 2639 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1807TLP | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 60mA, 300mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 5V Frequency - Transition: 15MHz Supplier Device Package: CPT3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 1 W |
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DTB713ZMT2L | Rohm Semiconductor |
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auf Bestellung 12624 Stücke: Lieferzeit 10-14 Tag (e) |
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EMD5T2R | Rohm Semiconductor |
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auf Bestellung 22781 Stücke: Lieferzeit 10-14 Tag (e) |
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RSF010P03TL | Rohm Semiconductor |
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auf Bestellung 5039 Stücke: Lieferzeit 10-14 Tag (e) |
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MCR006YZPF1502 | Rohm Semiconductor |
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MCR006YZPF3002 | Rohm Semiconductor |
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MCR006YZPF1003 | Rohm Semiconductor |
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MCR006YZPF4701 | Rohm Semiconductor |
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MCR006YZPF8200 | Rohm Semiconductor |
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MCR006YZPF4532 | Rohm Semiconductor |
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1SR154-600TE25 | Rohm Semiconductor |
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auf Bestellung 1937 Stücke: Lieferzeit 10-14 Tag (e) |
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SML010BATT86 | Rohm Semiconductor |
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TCA0G475M8R | Rohm Semiconductor |
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TCA0G226M8R | Rohm Semiconductor |
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TCA0G336M8R | Rohm Semiconductor |
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auf Bestellung 1732 Stücke: Lieferzeit 10-14 Tag (e) |
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TCP0J335M8R | Rohm Semiconductor |
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auf Bestellung 4440 Stücke: Lieferzeit 10-14 Tag (e) |
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TCA0J685M8R | Rohm Semiconductor |
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TCA1A155M8R | Rohm Semiconductor |
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BA028LBSG2-TR | Rohm Semiconductor |
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BA029LBSG2-TR | Rohm Semiconductor |
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BA038LBSG2-TR | Rohm Semiconductor |
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BA040LBSG2-TR | Rohm Semiconductor |
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BA2902F-E2 | Rohm Semiconductor |
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auf Bestellung 8040 Stücke: Lieferzeit 10-14 Tag (e) |
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BH15LB1WG-TR | Rohm Semiconductor |
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BH15LB1WHFV-TR | Rohm Semiconductor |
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BH1JLB1WHFV-TR | Rohm Semiconductor |
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BH25FB1WG-TR | Rohm Semiconductor |
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BH25FB1WHFV-TR | Rohm Semiconductor |
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BH25MA3WHFV-TR | Rohm Semiconductor |
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auf Bestellung 194 Stücke: Lieferzeit 10-14 Tag (e) |
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BH29FB1WG-TR | Rohm Semiconductor |
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BH29FB1WHFV-TR | Rohm Semiconductor |
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BH29MA3WHFV-TR | Rohm Semiconductor |
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BH29NB1WHFV-TR | Rohm Semiconductor |
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auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BH2JNB1WHFV-TR | Rohm Semiconductor |
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2SD2657KT146 |
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Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 1.5A SMT3
Description: TRANS NPN 30V 1.5A SMT3
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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25+ | 0.7 EUR |
29+ | 0.61 EUR |
2SD2662T100 |
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Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 1.5A SOT-89
Description: TRANS NPN 30V 1.5A SOT-89
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)2SD2670TL |
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Hersteller: Rohm Semiconductor
Description: TRANS NPN 12V 3A TSMT3
Description: TRANS NPN 12V 3A TSMT3
auf Bestellung 5291 Stücke:
Lieferzeit 10-14 Tag (e)2SD2675TL |
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Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 1A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TSMT3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Description: TRANS NPN 30V 1A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TSMT3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
auf Bestellung 1488 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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20+ | 0.92 EUR |
23+ | 0.78 EUR |
100+ | 0.58 EUR |
500+ | 0.46 EUR |
1000+ | 0.35 EUR |
2SD2704KT146 |
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Hersteller: Rohm Semiconductor
Description: TRANS NPN 20V 0.3A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 4ma, 2V
Frequency - Transition: 35MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Description: TRANS NPN 20V 0.3A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 4ma, 2V
Frequency - Transition: 35MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
auf Bestellung 43955 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
42+ | 0.42 EUR |
58+ | 0.31 EUR |
114+ | 0.16 EUR |
500+ | 0.14 EUR |
1000+ | 0.11 EUR |
DTA143ZMT2L |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 14194 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
41+ | 0.43 EUR |
100+ | 0.21 EUR |
500+ | 0.18 EUR |
1000+ | 0.12 EUR |
2000+ | 0.11 EUR |
DTB143TKT146 |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 40V 0.5A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Description: TRANS PREBIAS PNP 40V 0.5A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Produkt ist nicht verfügbar
DTB513ZETL |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS PNP 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.76 EUR |
33+ | 0.55 EUR |
100+ | 0.28 EUR |
500+ | 0.24 EUR |
1000+ | 0.19 EUR |
DTB713ZMT2L |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 150MW VMT3
Description: TRANS PREBIAS PNP 150MW VMT3
auf Bestellung 12624 Stücke:
Lieferzeit 10-14 Tag (e)DTC614TKT146 |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 20V 0.6A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Description: TRANS PREBIAS NPN 20V 0.6A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 3987 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.76 EUR |
33+ | 0.54 EUR |
100+ | 0.27 EUR |
500+ | 0.24 EUR |
1000+ | 0.19 EUR |
DTC614TUT106 |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Description: TRANS PREBIAS NPN 200MW UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 299 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
33+ | 0.55 EUR |
100+ | 0.37 EUR |
EM6K6T2R |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 20V 0.3A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
Description: MOSFET 2N-CH 20V 0.3A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
auf Bestellung 11517 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.79 EUR |
29+ | 0.61 EUR |
100+ | 0.37 EUR |
500+ | 0.34 EUR |
1000+ | 0.23 EUR |
2000+ | 0.21 EUR |
EMD29T2R |
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Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.12W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 120mW
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 100mA, 2V
Frequency - Transition: 250MHz, 260MHz
Resistor - Base (R1): 1kOhms, 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
Description: TRANS NPN/PNP PREBIAS 0.12W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 120mW
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 100mA, 2V
Frequency - Transition: 250MHz, 260MHz
Resistor - Base (R1): 1kOhms, 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
auf Bestellung 1806 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.77 EUR |
29+ | 0.63 EUR |
100+ | 0.43 EUR |
500+ | 0.32 EUR |
1000+ | 0.24 EUR |
EMD4T2R |
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Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms, 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms, 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
auf Bestellung 5974 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
38+ | 0.48 EUR |
100+ | 0.29 EUR |
500+ | 0.26 EUR |
1000+ | 0.18 EUR |
2000+ | 0.17 EUR |
EMD5T2R |
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Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
auf Bestellung 22781 Stücke:
Lieferzeit 10-14 Tag (e)EMX18T2R |
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Hersteller: Rohm Semiconductor
Description: TRANS 2NPN 12V 0.5A 6EMT
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: EMT6
Part Status: Active
Description: TRANS 2NPN 12V 0.5A 6EMT
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: EMT6
Part Status: Active
auf Bestellung 16268 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 0.92 EUR |
23+ | 0.77 EUR |
100+ | 0.54 EUR |
500+ | 0.42 EUR |
1000+ | 0.34 EUR |
2000+ | 0.3 EUR |
EMZ7T2R |
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Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP 12V 0.5A 6EMT
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Frequency - Transition: 320MHz, 260MHz
Supplier Device Package: EMT6
Part Status: Active
Description: TRANS NPN/PNP 12V 0.5A 6EMT
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Frequency - Transition: 320MHz, 260MHz
Supplier Device Package: EMT6
Part Status: Active
auf Bestellung 15741 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
33+ | 0.54 EUR |
100+ | 0.38 EUR |
500+ | 0.29 EUR |
1000+ | 0.26 EUR |
IMD3AT108 |
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Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SMT6
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SMT6
auf Bestellung 8857 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 0.6 EUR |
38+ | 0.47 EUR |
100+ | 0.28 EUR |
500+ | 0.26 EUR |
1000+ | 0.18 EUR |
RSF010P03TL |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 1A TUMT3
Description: MOSFET P-CH 30V 1A TUMT3
auf Bestellung 5039 Stücke:
Lieferzeit 10-14 Tag (e)RSL020P03TR |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 2A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: TUMT6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Description: MOSFET P-CH 30V 2A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: TUMT6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
auf Bestellung 8261 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 0.88 EUR |
24+ | 0.76 EUR |
100+ | 0.52 EUR |
500+ | 0.41 EUR |
1000+ | 0.33 EUR |
RTR020N05TL |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Description: MOSFET N-CH 45V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
auf Bestellung 4998 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.44 EUR |
15+ | 1.25 EUR |
100+ | 0.87 EUR |
500+ | 0.72 EUR |
1000+ | 0.62 EUR |
RTR040N03TL | ![]() |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Produkt ist nicht verfügbar
RUE003N02TL |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 300MA EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Description: MOSFET N-CH 20V 300MA EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
auf Bestellung 73963 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
38+ | 0.48 EUR |
54+ | 0.33 EUR |
106+ | 0.17 EUR |
500+ | 0.15 EUR |
1000+ | 0.11 EUR |
RUM003N02T2L |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 300MA VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Description: MOSFET N-CH 20V 300MA VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
auf Bestellung 194 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.7 EUR |
32+ | 0.56 EUR |
100+ | 0.38 EUR |
UMX18NTN |
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Hersteller: Rohm Semiconductor
Description: TRANS 2NPN 12V 0.5A 6UMT
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: UMT6
Part Status: Active
Description: TRANS 2NPN 12V 0.5A 6UMT
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: UMT6
Part Status: Active
auf Bestellung 106 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 0.69 EUR |
31+ | 0.58 EUR |
100+ | 0.41 EUR |
US5U3TR |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 1.5A TUMT5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT5
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
Description: MOSFET N-CH 30V 1.5A TUMT5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT5
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
auf Bestellung 2639 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1.02 EUR |
20+ | 0.89 EUR |
100+ | 0.62 EUR |
500+ | 0.52 EUR |
1000+ | 0.44 EUR |
2SA1807TLP |
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Hersteller: Rohm Semiconductor
Description: TRANS PNP 600V 1A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 60mA, 300mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: CPT3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1 W
Description: TRANS PNP 600V 1A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 60mA, 300mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: CPT3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1 W
Produkt ist nicht verfügbar
DTB713ZMT2L |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 150MW VMT3
Description: TRANS PREBIAS PNP 150MW VMT3
auf Bestellung 12624 Stücke:
Lieferzeit 10-14 Tag (e)EMD5T2R |
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Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
auf Bestellung 22781 Stücke:
Lieferzeit 10-14 Tag (e)RSF010P03TL |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 1A TUMT3
Description: MOSFET P-CH 30V 1A TUMT3
auf Bestellung 5039 Stücke:
Lieferzeit 10-14 Tag (e)MCR006YZPF1502 |
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Hersteller: Rohm Semiconductor
Description: RES SMD 15K OHM 1% 1/20W 0201
Description: RES SMD 15K OHM 1% 1/20W 0201
Produkt ist nicht verfügbar
MCR006YZPF3002 |
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Hersteller: Rohm Semiconductor
Description: RES SMD 30K OHM 1% 1/20W 0201
Description: RES SMD 30K OHM 1% 1/20W 0201
Produkt ist nicht verfügbar
MCR006YZPF1003 |
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Hersteller: Rohm Semiconductor
Description: RES SMD 100K OHM 1% 1/20W 0201
Description: RES SMD 100K OHM 1% 1/20W 0201
Produkt ist nicht verfügbar
MCR006YZPF4701 |
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Hersteller: Rohm Semiconductor
Description: RES SMD 4.7K OHM 1% 1/20W 0201
Description: RES SMD 4.7K OHM 1% 1/20W 0201
Produkt ist nicht verfügbar
MCR006YZPF8200 |
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Hersteller: Rohm Semiconductor
Description: RES SMD 820 OHM 1% 1/20W 0201
Description: RES SMD 820 OHM 1% 1/20W 0201
Produkt ist nicht verfügbar
MCR006YZPF4532 |
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Hersteller: Rohm Semiconductor
Description: RES SMD 45.3K OHM 1% 1/20W 0201
Description: RES SMD 45.3K OHM 1% 1/20W 0201
Produkt ist nicht verfügbar
1SR154-600TE25 |
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Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 1A PMDS
Description: DIODE GEN PURP 600V 1A PMDS
auf Bestellung 1937 Stücke:
Lieferzeit 10-14 Tag (e)SML010BATT86 |
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Hersteller: Rohm Semiconductor
Description: LED BLUE CLEAR 1208 SMD
Description: LED BLUE CLEAR 1208 SMD
Produkt ist nicht verfügbar
TCA0G475M8R |
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Hersteller: Rohm Semiconductor
Description: CAP TANT 4.7UF 4V 20% 1206
Description: CAP TANT 4.7UF 4V 20% 1206
Produkt ist nicht verfügbar
TCA0G226M8R |
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Hersteller: Rohm Semiconductor
Description: CAP TANT 22UF 4V 20% 1206
Description: CAP TANT 22UF 4V 20% 1206
Produkt ist nicht verfügbar
TCA0G336M8R |
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Hersteller: Rohm Semiconductor
Description: CAP TANT 33UF 4V 20% 1206
Description: CAP TANT 33UF 4V 20% 1206
auf Bestellung 1732 Stücke:
Lieferzeit 10-14 Tag (e)TCP0J335M8R |
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Hersteller: Rohm Semiconductor
Description: CAP TANT 3.3UF 6.3V 20% 0805
Description: CAP TANT 3.3UF 6.3V 20% 0805
auf Bestellung 4440 Stücke:
Lieferzeit 10-14 Tag (e)TCA0J685M8R |
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Hersteller: Rohm Semiconductor
Description: CAP TANT 6.8UF 6.3V 20% 1206
Description: CAP TANT 6.8UF 6.3V 20% 1206
Produkt ist nicht verfügbar
TCA1A155M8R |
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Hersteller: Rohm Semiconductor
Description: CAP TANT 1.5UF 10V 20% 1206
Description: CAP TANT 1.5UF 10V 20% 1206
Produkt ist nicht verfügbar
BA028LBSG2-TR |
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Hersteller: Rohm Semiconductor
Description: IC REG LDO 2.8V 0.15A SMP5
Description: IC REG LDO 2.8V 0.15A SMP5
Produkt ist nicht verfügbar
BA029LBSG2-TR |
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Hersteller: Rohm Semiconductor
Description: IC REG LDO 2.9V 0.15A SMP5
Description: IC REG LDO 2.9V 0.15A SMP5
Produkt ist nicht verfügbar
BA038LBSG2-TR |
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Hersteller: Rohm Semiconductor
Description: IC REG LDO 3.8V 0.15A SMP5
Description: IC REG LDO 3.8V 0.15A SMP5
Produkt ist nicht verfügbar
BA040LBSG2-TR |
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Hersteller: Rohm Semiconductor
Description: IC REG LDO 4V 0.15A SMP5
Description: IC REG LDO 4V 0.15A SMP5
Produkt ist nicht verfügbar
BA2902F-E2 |
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Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 500KHZ 14SOP
Description: IC OPAMP GP 500KHZ 14SOP
auf Bestellung 8040 Stücke:
Lieferzeit 10-14 Tag (e)BH15LB1WG-TR |
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Hersteller: Rohm Semiconductor
Description: IC REG LDO 1.5V 0.15A 5SSOP
Description: IC REG LDO 1.5V 0.15A 5SSOP
Produkt ist nicht verfügbar
BH15LB1WHFV-TR |
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Hersteller: Rohm Semiconductor
Description: IC REG LDO 1.5V 0.15A 5HVSOF
Description: IC REG LDO 1.5V 0.15A 5HVSOF
Produkt ist nicht verfügbar
BH1JLB1WHFV-TR |
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Hersteller: Rohm Semiconductor
Description: IC REG LDO 1.85V 0.15A 5HVSOF
Description: IC REG LDO 1.85V 0.15A 5HVSOF
Produkt ist nicht verfügbar
BH25FB1WG-TR |
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Hersteller: Rohm Semiconductor
Description: IC REG LDO 2.5V 0.15A 5SSOP
Description: IC REG LDO 2.5V 0.15A 5SSOP
Produkt ist nicht verfügbar
BH25FB1WHFV-TR |
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Hersteller: Rohm Semiconductor
Description: IC REG LDO 2.5V 0.15A 5HVSOF
Description: IC REG LDO 2.5V 0.15A 5HVSOF
Produkt ist nicht verfügbar
BH25MA3WHFV-TR |
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Hersteller: Rohm Semiconductor
Description: IC REG LDO 2.5V 0.3A 6HVSOF
Description: IC REG LDO 2.5V 0.3A 6HVSOF
auf Bestellung 194 Stücke:
Lieferzeit 10-14 Tag (e)BH29FB1WG-TR |
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Hersteller: Rohm Semiconductor
Description: IC REG LDO 2.9V 0.15A 5SSOP
Description: IC REG LDO 2.9V 0.15A 5SSOP
Produkt ist nicht verfügbar
BH29FB1WHFV-TR |
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Hersteller: Rohm Semiconductor
Description: IC REG LDO 2.9V 0.15A 5HVSOF
Description: IC REG LDO 2.9V 0.15A 5HVSOF
Produkt ist nicht verfügbar
BH29MA3WHFV-TR |
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Hersteller: Rohm Semiconductor
Description: IC REG LDO 2.9V 0.3A 6HVSOF
Description: IC REG LDO 2.9V 0.3A 6HVSOF
Produkt ist nicht verfügbar
BH29NB1WHFV-TR |
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Hersteller: Rohm Semiconductor
Description: IC REG LDO 2.9V 0.15A 5HVSOF
Description: IC REG LDO 2.9V 0.15A 5HVSOF
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)BH2JNB1WHFV-TR |
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Hersteller: Rohm Semiconductor
Description: IC REG LDO 2.85V 0.15A 5HVSOF
Description: IC REG LDO 2.85V 0.15A 5HVSOF
Produkt ist nicht verfügbar