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ZXMP10A17E6QTA

ZXMP10A17E6QTA Diodes Incorporated

ZXMP10A17E6Q.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 1.3A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.57 EUR
6000+ 0.53 EUR
Mindestbestellmenge: 3000
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Technische Details ZXMP10A17E6QTA Diodes Incorporated

Description: MOSFET P-CH 100V 1.3A SOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-26, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V.

Weitere Produktangebote ZXMP10A17E6QTA nach Preis ab 0.49 EUR bis 1.48 EUR

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ZXMP10A17E6QTA ZXMP10A17E6QTA Hersteller : Diodes Incorporated DIOD_S_A0008513505_1-2543012.pdf MOSFET MOSFET BVDSS61V-100V
auf Bestellung 4935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.36 EUR
10+ 1.18 EUR
100+ 0.82 EUR
500+ 0.69 EUR
1000+ 0.58 EUR
3000+ 0.51 EUR
6000+ 0.49 EUR
Mindestbestellmenge: 3
ZXMP10A17E6QTA ZXMP10A17E6QTA Hersteller : Diodes Incorporated ZXMP10A17E6Q.pdf Description: MOSFET P-CH 100V 1.3A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
auf Bestellung 14695 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.48 EUR
14+ 1.29 EUR
100+ 0.99 EUR
500+ 0.78 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 12
ZXMP10A17E6QTA ZXMP10A17E6QTA Hersteller : Diodes Inc 33196954945517096zxmp10a17e6q.pdf Trans MOSFET P-CH 100V 1.3A Automotive 6-Pin SOT-26 T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
ZXMP10A17E6QTA Hersteller : DIODES INCORPORATED ZXMP10A17E6Q.pdf ZXMP10A17E6QTA SMD N channel transistors
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