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ZXMN6A09KTC

ZXMN6A09KTC Diodes Incorporated

ZXMN6A09K.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 7.7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7.3A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1426 pF @ 30 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.21 EUR
5000+ 1.16 EUR
Mindestbestellmenge: 2500
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Technische Details ZXMN6A09KTC Diodes Incorporated

Description: MOSFET N-CH 60V 7.7A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 7.3A, 10V, Power Dissipation (Max): 2.15W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1426 pF @ 30 V.

Weitere Produktangebote ZXMN6A09KTC nach Preis ab 1.25 EUR bis 2.87 EUR

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Preis ohne MwSt
ZXMN6A09KTC ZXMN6A09KTC Hersteller : Diodes Incorporated DIOD_S_A0000194670_1-2541872.pdf MOSFET MOSFET N-CH 60V
auf Bestellung 7488 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2.87 EUR
10+ 2.09 EUR
100+ 1.9 EUR
250+ 1.75 EUR
500+ 1.59 EUR
1000+ 1.36 EUR
2500+ 1.25 EUR
ZXMN6A09KTC ZXMN6A09KTC Hersteller : Diodes Incorporated ZXMN6A09K.pdf Description: MOSFET N-CH 60V 7.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7.3A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1426 pF @ 30 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
ZXMN6A09KTC ZXMN6A09K.pdf
auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)