ZXMN3A14FQTA DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2773 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 61+ | 1.17 EUR |
| 133+ | 0.54 EUR |
| 151+ | 0.47 EUR |
| 159+ | 0.45 EUR |
| 168+ | 0.43 EUR |
| 500+ | 0.41 EUR |
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Produktbewertung abgeben
Technische Details ZXMN3A14FQTA DIODES INCORPORATED
Description: MOSFET N-CH 30V 3.9A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V.
Weitere Produktangebote ZXMN3A14FQTA nach Preis ab 0.41 EUR bis 1.32 EUR
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ZXMN3A14FQTA | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.6A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2773 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN3A14FQTA | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS 25V-30V |
auf Bestellung 19671 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN3A14FQTA | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 3.9A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V |
auf Bestellung 2975 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN3A14FQTA | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 3.9A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V |
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