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ZXMN3A04KTC

ZXMN3A04KTC Diodes Incorporated

ZXMN3A04K.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 18.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 12A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250mA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2080 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.08 EUR
10+ 2.55 EUR
100+ 2.03 EUR
500+ 1.72 EUR
1000+ 1.46 EUR
Mindestbestellmenge: 6
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Technische Details ZXMN3A04KTC Diodes Incorporated

Description: MOSFET N-CH 30V 18.4A DPAK, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 12A, 10V, Power Dissipation (Max): 2.15W (Ta), Vgs(th) (Max) @ Id: 1V @ 250mA, Supplier Device Package: U-DFN2020-6 (Type B), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 36.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 15 V, Qualification: AEC-Q101.

Weitere Produktangebote ZXMN3A04KTC nach Preis ab 1.48 EUR bis 3.45 EUR

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ZXMN3A04KTC ZXMN3A04KTC Hersteller : Diodes Incorporated ZXMN3A04K.pdf Description: MOSFET N-CH 30V 18.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 12A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250mA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2080 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.24 EUR
10+ 2.68 EUR
100+ 2.13 EUR
500+ 1.8 EUR
1000+ 1.53 EUR
Mindestbestellmenge: 6
ZXMN3A04KTC ZXMN3A04KTC Hersteller : Diodes Incorporated ZXMN3A04K.pdf MOSFET N-Ch 30 Volt 18.4A
auf Bestellung 1549 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.45 EUR
10+ 3.12 EUR
100+ 2.5 EUR
500+ 2.06 EUR
1000+ 1.7 EUR
2500+ 1.58 EUR
10000+ 1.48 EUR
ZXMN3A04KTC ZXMN3A04K.pdf
auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)
ZXMN3A04KTC ZXMN3A04KTC Hersteller : Diodes Zetex 495zxmn3a04k.pdf Trans MOSFET N-CH 30V 12A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
ZXMN3A04KTC ZXMN3A04KTC Hersteller : Diodes Incorporated ZXMN3A04K.pdf Description: MOSFET N-CH 30V 18.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 12A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250mA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar