ZXMN2B14FHTA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 872 pF @ 10 V
Description: MOSFET N-CH 20V 3.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 872 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.54 EUR |
6000+ | 0.5 EUR |
15000+ | 0.48 EUR |
30000+ | 0.46 EUR |
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Produktbewertung abgeben
Technische Details ZXMN2B14FHTA Diodes Incorporated
Description: MOSFET N-CH 20V 3.5A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 872 pF @ 10 V.
Weitere Produktangebote ZXMN2B14FHTA nach Preis ab 0.39 EUR bis 1.39 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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ZXMN2B14FHTA | Hersteller : Diodes Zetex | Trans MOSFET N-CH 20V 3.5A 3-Pin SOT-23 T/R |
auf Bestellung 2668 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN2B14FHTA | Hersteller : Diodes Incorporated | MOSFET 20V N-Channel MOSFET w/low gate drive cap |
auf Bestellung 2820 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN2B14FHTA | Hersteller : Diodes Zetex | Trans MOSFET N-CH 20V 3.5A 3-Pin SOT-23 T/R |
auf Bestellung 2668 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN2B14FHTA | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 3.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 872 pF @ 10 V |
auf Bestellung 33397 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN2B14FHTA | Hersteller : Diodes Zetex | Trans MOSFET N-CH 20V 3.5A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |