ZXMN10A11KTC Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 100V 2.4A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 2.6A, 10V
Power Dissipation (Max): 2.11W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.46 EUR |
| 5000+ | 0.43 EUR |
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Technische Details ZXMN10A11KTC Diodes Incorporated
Description: MOSFET N-CH 100V 2.4A TO252-2, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), Rds On (Max) @ Id, Vgs: 350mOhm @ 2.6A, 10V, Power Dissipation (Max): 2.11W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252-3, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 50 V.
Weitere Produktangebote ZXMN10A11KTC nach Preis ab 0.44 EUR bis 1.23 EUR
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ZXMN10A11KTC | Hersteller : Diodes Incorporated |
MOSFET N-Chan 100V MOSFET (UMOS) |
auf Bestellung 2240 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN10A11KTC | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V 2.4A TO252-2 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 2.6A, 10V Power Dissipation (Max): 2.11W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 50 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN10A11KTC | Hersteller : Diodes Inc |
Trans MOSFET N-CH 100V 2.4A 3-Pin(2+Tab) DPAK T/R |
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ZXMN10A11KTC | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.1A; 4.06W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.1A Power dissipation: 4.06W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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ZXMN10A11KTC | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.1A; 4.06W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.1A Power dissipation: 4.06W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |