auf Bestellung 2255 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 107+ | 1.46 EUR |
| 112+ | 1.35 EUR |
| 124+ | 1.18 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.89 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details ZXMN10A09KTC Diodes Zetex
Description: MOSFET N-CH 100V 5A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 4.6A, 10V, Power Dissipation (Max): 2.15W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1313 pF @ 50 V.
Weitere Produktangebote ZXMN10A09KTC nach Preis ab 1.27 EUR bis 2.99 EUR
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ZXMN10A09KTC | Hersteller : Diodes Incorporated |
 MOSFET MOSFET N-CH 100V |
auf Bestellung 806 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN10A09KTC | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V 5A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 4.6A, 10V Power Dissipation (Max): 2.15W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1313 pF @ 50 V |
auf Bestellung 1377 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN10A09KTC | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.1A; 4.31W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.1A Power dissipation: 4.31W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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ZXMN10A09KTC | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 5A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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ZXMN10A09KTC | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V 5A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 4.6A, 10V Power Dissipation (Max): 2.15W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1313 pF @ 50 V |
Produkt ist nicht verfügbar |
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ZXMN10A09KTC | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.1A; 4.31W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.1A Power dissipation: 4.31W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |