ZXMN10A08E6TA Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 100V 1.5A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
auf Bestellung 294000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.34 EUR |
| 6000+ | 0.33 EUR |
| 9000+ | 0.3 EUR |
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Technische Details ZXMN10A08E6TA Diodes Incorporated
Description: MOSFET N-CH 100V 1.5A SOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-26, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V.
Weitere Produktangebote ZXMN10A08E6TA nach Preis ab 0.3 EUR bis 1.02 EUR
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ZXMN10A08E6TA | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 3.5A 6-Pin SOT-26 T/R |
auf Bestellung 5139 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN10A08E6TA | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 3.5A 6-Pin SOT-26 T/R |
auf Bestellung 5139 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN10A08E6TA | Hersteller : Diodes Incorporated |
MOSFET 100V N-Chnl UMOS |
auf Bestellung 16013 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN10A08E6TA | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V 1.5A SOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V |
auf Bestellung 295202 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN10A08E6TA | Hersteller : Diodes Inc |
Trans MOSFET N-CH 100V 3.5A 6-Pin SOT-26 T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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auf Bestellung 3200 Stücke: Lieferzeit 21-28 Tag (e) |
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ZXMN10A08E6TA | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 3.5A 6-Pin SOT-26 T/R |
Produkt ist nicht verfügbar |