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ZXM62P03E6TA

ZXM62P03E6TA Diodes Incorporated

ZXM62P03E6.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 1.5A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.6A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.51 EUR
6000+ 0.48 EUR
Mindestbestellmenge: 3000
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Technische Details ZXM62P03E6TA Diodes Incorporated

Description: MOSFET P-CH 30V 1.5A SOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 1.6A, 10V, Power Dissipation (Max): 625mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-26, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V.

Weitere Produktangebote ZXM62P03E6TA nach Preis ab 0.4 EUR bis 1.34 EUR

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Preis ohne MwSt
ZXM62P03E6TA ZXM62P03E6TA Hersteller : Diodes Incorporated ZXM62P03E6.pdf MOSFET 30V P-Chnl HDMOS
auf Bestellung 9516 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.2 EUR
10+ 1.04 EUR
100+ 0.72 EUR
500+ 0.62 EUR
1000+ 0.53 EUR
3000+ 0.44 EUR
6000+ 0.43 EUR
Mindestbestellmenge: 3
ZXM62P03E6TA ZXM62P03E6TA Hersteller : Diodes Incorporated ZXM62P03E6.pdf Description: MOSFET P-CH 30V 1.5A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.6A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
auf Bestellung 8960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.34 EUR
16+ 1.17 EUR
100+ 0.9 EUR
500+ 0.71 EUR
1000+ 0.57 EUR
Mindestbestellmenge: 14
ZXM62P03E6TA Hersteller : DIODES INCORPORATED ZXM62P03E6.pdf ZXM62P03E6TA SMD P channel transistors
auf Bestellung 935 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
72+1 EUR
170+ 0.42 EUR
176+ 0.41 EUR
180+ 0.4 EUR
Mindestbestellmenge: 72