Technische Details ZVP4525GTA-50 Diodes Zetex
Description: MOSFET BVDSS: 101V~250V SOT223 T, Packaging: Bulk, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 265mA (Ta), Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V, Vgs (Max): ±40V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 25 V.
Weitere Produktangebote ZVP4525GTA-50
Foto | Bezeichnung | Hersteller | Beschreibung |
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ZVP4525GTA-50 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 101V~250V SOT223 T Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 265mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs (Max): ±40V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 25 V |
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