![ZVN2110GTA ZVN2110GTA](https://static6.arrow.com/aropdfconversion/arrowimages/9b7c043009bb1b14655b77288bf0ea697c495011/sot223.jpg)
ZVN2110GTA Diodes Zetex
auf Bestellung 55000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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1000+ | 0.38 EUR |
13000+ | 0.34 EUR |
26000+ | 0.3 EUR |
39000+ | 0.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details ZVN2110GTA Diodes Zetex
Description: MOSFET N-CH 100V 500MA SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: SOT-223-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V.
Weitere Produktangebote ZVN2110GTA nach Preis ab 0.38 EUR bis 1.42 EUR
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ZVN2110GTA | Hersteller : Diodes Zetex |
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auf Bestellung 55000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZVN2110GTA | Hersteller : Diodes Zetex |
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auf Bestellung 159000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZVN2110GTA | Hersteller : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVN2110GTA | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.5A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.5A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 438 Stücke: Lieferzeit 7-14 Tag (e) |
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ZVN2110GTA | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.5A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.5A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 438 Stücke: Lieferzeit 14-21 Tag (e) |
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ZVN2110GTA | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V |
auf Bestellung 8056 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVN2110GTA | Hersteller : Diodes Incorporated |
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auf Bestellung 6616 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVN2110GTA | Hersteller : Diodes Inc |
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auf Bestellung 54000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZVN2110GTA | Hersteller : Zetex |
![]() Anzahl je Verpackung: 50 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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ZVN2110GTA Produktcode: 107399 |
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Produkt ist nicht verfügbar
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ZVN2110GTA | Hersteller : Diodes Zetex |
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Produkt ist nicht verfügbar |
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ZVN2110GTA | Hersteller : Diodes Zetex |
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Produkt ist nicht verfügbar |
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ZVN2110GTA | Hersteller : Diodes Inc |
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Produkt ist nicht verfügbar |