ZTX558QSTZ Diodes Incorporated


ZTX558.pdf Hersteller: Diodes Incorporated
Description: PWR HI VOLTAGE TRANSISTOR EP3 AM
Packaging: Tape & Box (TB)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: E-Line (TO-92 compatible)
Grade: Automotive
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details ZTX558QSTZ Diodes Incorporated

Description: PWR HI VOLTAGE TRANSISTOR EP3 AM, Packaging: Tape & Box (TB), Package / Case: E-Line-3, Formed Leads, Mounting Type: Through Hole, Transistor Type: PNP - Darlington, Operating Temperature: -55°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V, Frequency - Transition: 50MHz, Supplier Device Package: E-Line (TO-92 compatible), Grade: Automotive, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 1 W, Qualification: AEC-Q101.

Weitere Produktangebote ZTX558QSTZ

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
ZTX558QSTZ Hersteller : Diodes Incorporated ZTX558.pdf Bipolar Transistors - BJT Pwr Hi Voltage Transistor EP3 AMMO 4K
Produkt ist nicht verfügbar