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YQ2LAM10BTFTR ROHM Semiconductor
auf Bestellung 2984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 1.05 EUR |
10+ | 0.91 EUR |
100+ | 0.63 EUR |
500+ | 0.49 EUR |
1000+ | 0.41 EUR |
3000+ | 0.35 EUR |
9000+ | 0.32 EUR |
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Technische Details YQ2LAM10BTFTR ROHM Semiconductor
Description: TRENCH MOS STRUCTURE, 100V, 2A, Packaging: Tape & Reel (TR), Package / Case: SOD-128, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: PMDTM, Operating Temperature - Junction: 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A, Current - Reverse Leakage @ Vr: 15 µA @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote YQ2LAM10BTFTR nach Preis ab 0.41 EUR bis 1.06 EUR
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YQ2LAM10BTFTR | Hersteller : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: PMDTM Operating Temperature - Junction: 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A Current - Reverse Leakage @ Vr: 15 µA @ 100 V Qualification: AEC-Q101 |
auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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YQ2LAM10BTFTR | Hersteller : Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: PMDTM Operating Temperature - Junction: 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A Current - Reverse Leakage @ Vr: 15 µA @ 100 V Qualification: AEC-Q101 |
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