YJL02N10A YANGJIE TECHNOLOGY
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 1.6A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 1.6A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
auf Bestellung 1960 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
730+ | 0.099 EUR |
1270+ | 0.056 EUR |
1660+ | 0.043 EUR |
1750+ | 0.041 EUR |
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Technische Details YJL02N10A YANGJIE TECHNOLOGY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 1.6A; 1.2W, Type of transistor: N-MOSFET, Technology: TRENCH POWER MV, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 1.6A, Pulsed drain current: 8A, Power dissipation: 1.2W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 0.31Ω, Mounting: SMD, Gate charge: 5.3nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 10 Stücke.
Weitere Produktangebote YJL02N10A nach Preis ab 0.041 EUR bis 0.099 EUR
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YJL02N10A | Hersteller : YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 1.6A; 1.2W Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.6A Pulsed drain current: 8A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.31Ω Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1960 Stücke: Lieferzeit 14-21 Tag (e) |
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YJL02N10A | Hersteller : Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 100V 2A SOT-23-3L |
Produkt ist nicht verfügbar |
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YJL02N10A | Hersteller : Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 100V 2A SOT-23-3L |
Produkt ist nicht verfügbar |