YJH03N10A Yangjie Technology
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.16 EUR |
5000+ | 0.15 EUR |
10000+ | 0.14 EUR |
20000+ | 0.13 EUR |
40000+ | 0.12 EUR |
100000+ | 0.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details YJH03N10A Yangjie Technology
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W, Type of transistor: N-MOSFET, Technology: TRENCH POWER MV, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 2.4A, Pulsed drain current: 12A, Power dissipation: 4W, Case: SOT89, Gate-source voltage: ±20V, On-state resistance: 0.12Ω, Mounting: SMD, Gate charge: 16nC, Kind of package: reel; tape, Kind of channel: enhanced.
Weitere Produktangebote YJH03N10A nach Preis ab 0.083 EUR bis 0.18 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
YJH03N10A | Hersteller : YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.4A Pulsed drain current: 12A Power dissipation: 4W Case: SOT89 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 9830 Stücke: Lieferzeit 14-21 Tag (e) |
|