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YJG15N15B YANGJIE TECHNOLOGY
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 150V; 15A; 29W
Type of transistor: N-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 15A
Pulsed drain current: 50A
Power dissipation: 29W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 150V; 15A; 29W
Type of transistor: N-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 15A
Pulsed drain current: 50A
Power dissipation: 29W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details YJG15N15B YANGJIE TECHNOLOGY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 150V; 15A; 29W, Type of transistor: N-MOSFET, Technology: SPLIT GATE TRENCH, Polarisation: unipolar, Drain-source voltage: 150V, Drain current: 15A, Pulsed drain current: 50A, Power dissipation: 29W, Case: DFN5x6, Gate-source voltage: ±20V, On-state resistance: 75mΩ, Mounting: SMD, Gate charge: 11.6nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
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YJG15N15B | Hersteller : YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 150V; 15A; 29W Type of transistor: N-MOSFET Technology: SPLIT GATE TRENCH Polarisation: unipolar Drain-source voltage: 150V Drain current: 15A Pulsed drain current: 50A Power dissipation: 29W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 11.6nC Kind of package: reel; tape Kind of channel: enhanced |
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