![YJD25N15B YJD25N15B](https://ce8dc832c.cloudimg.io/v7/_cdn_/16/7E/00/00/0/59233_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=85a92da44426a86680dc5a939d6fe19e96293048)
YJD25N15B YANGJIE TECHNOLOGY
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 90A; 52W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 52W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 90A; 52W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 52W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details YJD25N15B YANGJIE TECHNOLOGY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 90A; 52W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 150V, Drain current: 25A, Pulsed drain current: 90A, Power dissipation: 52W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 75mΩ, Mounting: SMD, Gate charge: 11.6nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote YJD25N15B
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
![]() |
YJD25N15B | Hersteller : YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 90A; 52W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 25A Pulsed drain current: 90A Power dissipation: 52W Case: TO252 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 11.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |