auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.17 EUR |
| 10+ | 3.47 EUR |
| 100+ | 2.85 EUR |
| 250+ | 2.55 EUR |
| 500+ | 2.38 EUR |
| 1000+ | 2.29 EUR |
| 1500+ | 2.15 EUR |
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Technische Details XPJR6604PB,LXHQ Toshiba
Description: 40V; UMOS9; 0.66MOHM; S-TOGL, Packaging: Tape & Reel (TR), Package / Case: 5-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 0.66mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: S-TOGL™, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote XPJR6604PB,LXHQ nach Preis ab 1.95 EUR bis 6.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| XPJR6604PB,LXHQ | Hersteller : Toshiba Semiconductor and Storage |
 Description: 40V; UMOS9; 0.66MOHM; S-TOGLPackaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 0.66mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: S-TOGL™ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| XPJR6604PB,LXHQ | Hersteller : Toshiba Semiconductor and Storage |
Description: 40V; UMOS9; 0.66MOHM; S-TOGL Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 0.66mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: S-TOGL™ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 7177 Stücke: Lieferzeit 10-14 Tag (e) |
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