auf Bestellung 10000 Stücke:
Lieferzeit 169-173 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.68 EUR |
| 10+ | 2.22 EUR |
| 100+ | 1.76 EUR |
| 250+ | 1.72 EUR |
| 500+ | 1.5 EUR |
| 1000+ | 1.21 EUR |
| 5000+ | 1.2 EUR |
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Technische Details XPH3R206NC,L1XHQ Toshiba
Description: MOSFET N-CH 60V 70A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Ta), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 35A, 10V, Power Dissipation (Max): 960mW (Ta), 132W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Grade: Automotive, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote XPH3R206NC,L1XHQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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XPH3R206NC,L1XHQ | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 60V 70A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Ta) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 35A, 10V Power Dissipation (Max): 960mW (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Grade: Automotive Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 10 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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XPH3R206NC,L1XHQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 70A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Ta) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 35A, 10V Power Dissipation (Max): 960mW (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Grade: Automotive Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 10 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |