XP4NA2R2HCST YAGEO XSEMI

Description: MOSFET N CH 40V 36.5A SPPAK5X6, Packaging: Tube, Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36.5A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.28mOhm @ 40A, 10V, Power Dissipation (Max): 5W (Ta), 96.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SPPAK 5X6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V.