XP221P0501TR-G TOREX
Hersteller: TOREX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.5A; Idm: -1A; 0.4W; SOT23-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -500mA
Pulsed drain current: -1A
Power dissipation: 0.4W
Case: SOT23-3
Gate-source voltage: ±8V
On-state resistance: 2.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.5A; Idm: -1A; 0.4W; SOT23-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -500mA
Pulsed drain current: -1A
Power dissipation: 0.4W
Case: SOT23-3
Gate-source voltage: ±8V
On-state resistance: 2.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details XP221P0501TR-G TOREX
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -0.5A; Idm: -1A; 0.4W; SOT23-3, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -500mA, Pulsed drain current: -1A, Power dissipation: 0.4W, Case: SOT23-3, Gate-source voltage: ±8V, On-state resistance: 2.7Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote XP221P0501TR-G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
XP221P0501TR-G | Hersteller : TOREX |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.5A; Idm: -1A; 0.4W; SOT23-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -500mA Pulsed drain current: -1A Power dissipation: 0.4W Case: SOT23-3 Gate-source voltage: ±8V On-state resistance: 2.7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |