VS-SC80FA65 Vishay
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Schottky Diodes & Rectifiers SOT-227 Silicon Carbide Schottky Barrier Diode, 650 V, 80 A
auf Bestellung 160 Stücke:
Lieferzeit 150-154 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 82.03 EUR |
10+ | 76.54 EUR |
25+ | 73.32 EUR |
50+ | 71.03 EUR |
100+ | 66.46 EUR |
250+ | 64.17 EUR |
480+ | 60.95 EUR |
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Technische Details VS-SC80FA65 Vishay
Description: MODULES RECTIFIERS - SOT-227 SIC, Packaging: Strip, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 40A, Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.58 V @ 40 A, Current - Reverse Leakage @ Vr: 80 µA @ 650 V.
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VS-SC80FA65 | Hersteller : Vishay |
![]() Packaging: Strip Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.58 V @ 40 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
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