VS-MURB820-1-M3 VISHAY
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 20V; 8A; tube; Ifsm: 100A; IPAK,TO262AA; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 8A
Max. load current: 16A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: IPAK; TO262AA
Max. forward voltage: 0.975V
Max. forward impulse current: 100A
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 20V; 8A; tube; Ifsm: 100A; IPAK,TO262AA; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 8A
Max. load current: 16A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: IPAK; TO262AA
Max. forward voltage: 0.975V
Max. forward impulse current: 100A
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
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Technische Details VS-MURB820-1-M3 VISHAY
Description: DIODE GEN PURP 200V 8A TO262AA, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-262AA, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Weitere Produktangebote VS-MURB820-1-M3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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VS-MURB820-1-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 8A TO262AA Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-262AA Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
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VS-MURB820-1-M3 | Hersteller : Vishay Semiconductors | Rectifiers 200V 8A IF TO-262AA 100A IFSM |
Produkt ist nicht verfügbar |
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VS-MURB820-1-M3 | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 20V; 8A; tube; Ifsm: 100A; IPAK,TO262AA; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 20V Load current: 8A Max. load current: 16A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: IPAK; TO262AA Max. forward voltage: 0.975V Max. forward impulse current: 100A Kind of package: tube |
Produkt ist nicht verfügbar |