VS-GA200HS60S1 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 480A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 32.5 nF @ 30 V
Description: IGBT MOD 600V 480A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 32.5 nF @ 30 V
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Technische Details VS-GA200HS60S1 Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 480A INT-A-PAK, Packaging: Bulk, Package / Case: INT-A-PAK, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: INT-A-PAK, Current - Collector (Ic) (Max): 480 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 830 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 32.5 nF @ 30 V.
Weitere Produktangebote VS-GA200HS60S1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| VS-GA200HS60S1 | Hersteller : Vishay Semiconductors | Rectifiers Output & SW Modules - IAP IGBT |
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