VS-E5TW1206FP-N3 Vishay Semiconductors
auf Bestellung 1993 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.2 EUR |
| 10+ | 1.8 EUR |
| 100+ | 1.39 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 0.96 EUR |
| 3000+ | 0.9 EUR |
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Technische Details VS-E5TW1206FP-N3 Vishay Semiconductors
Description: DIODE GP 600V 12A TO220-2FP, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 26 ns, Technology: Standard, Current - Average Rectified (Io): 12A, Supplier Device Package: TO-220-2 Full Pack, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 3.35 V @ 12 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Weitere Produktangebote VS-E5TW1206FP-N3 nach Preis ab 1.16 EUR bis 2.46 EUR
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VS-E5TW1206FP-N3 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GP 600V 12A TO220-2FPPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26 ns Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3.35 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 1088 Stücke: Lieferzeit 10-14 Tag (e) |
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