VS-8EWF12STR-M3

VS-8EWF12STR-M3 Vishay General Semiconductor - Diodes Division


vs-8ewf12sm.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A D-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 4000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+2.61 EUR
Mindestbestellmenge: 2000
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Technische Details VS-8EWF12STR-M3 Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 1.2KV 8A D-PAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 270 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-252AA (DPAK), Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.

Weitere Produktangebote VS-8EWF12STR-M3 nach Preis ab 2.6 EUR bis 5.37 EUR

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VS-8EWF12STR-M3 VS-8EWF12STR-M3 Hersteller : Vishay Semiconductors vs-8ewf12sm.pdf Schottky Diodes & Rectifiers New Input Diodes - D-PAK-e3
auf Bestellung 2025 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.35 EUR
10+ 4.51 EUR
100+ 3.64 EUR
250+ 3.43 EUR
500+ 3.24 EUR
1000+ 2.78 EUR
2000+ 2.6 EUR
VS-8EWF12STR-M3 VS-8EWF12STR-M3 Hersteller : Vishay General Semiconductor - Diodes Division vs-8ewf12sm.pdf Description: DIODE GEN PURP 1.2KV 8A D-PAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 6575 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.37 EUR
10+ 4.51 EUR
100+ 3.65 EUR
500+ 3.24 EUR
1000+ 2.77 EUR
Mindestbestellmenge: 4
VS-8EWF12STR-M3 VS-8EWF12STR-M3 Hersteller : Vishay vs-8ewf12sm.pdf Rectifier Diode Switching Si 1.2KV 8A 270ns 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
VS-8EWF12STR-M3 VS-8EWF12STR-M3 Hersteller : Vishay vs-8ewf12sm.pdf Rectifier Diode Switching Si 1.2KV 8A 270ns 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
VS-8EWF12STR-M3 Hersteller : VISHAY vs-8ewf12sm.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK
Mounting: SMD
Case: DPAK
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Type of diode: rectifying
Features of semiconductor devices: fast switching; glass passivated
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
VS-8EWF12STR-M3 Hersteller : VISHAY vs-8ewf12sm.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK
Mounting: SMD
Case: DPAK
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Type of diode: rectifying
Features of semiconductor devices: fast switching; glass passivated
Produkt ist nicht verfügbar