VS-8EWF12S-M3 VISHAY
Hersteller: VISHAYCategory: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 270ns; DPAK; Ufmax: 1.3V; Ir: 4mA
Mounting: SMD
Case: DPAK
Kind of package: tube
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.3V
Load current: 8A
Semiconductor structure: single diode
Reverse recovery time: 270ns
Max. forward impulse current: 150A
Leakage current: 4mA
Type of diode: rectifying
Features of semiconductor devices: fast switching; glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1675 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 43+ | 1.67 EUR |
| 48+ | 1.52 EUR |
| 62+ | 1.16 EUR |
| 65+ | 1.1 EUR |
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Produktbewertung abgeben
Technische Details VS-8EWF12S-M3 VISHAY
Description: DIODE GEN PURP 1.2KV 8A TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 270 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-252AA (DPAK), Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Weitere Produktangebote VS-8EWF12S-M3 nach Preis ab 1.1 EUR bis 5.37 EUR
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VS-8EWF12S-M3 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; 270ns; DPAK; Ufmax: 1.3V; Ir: 4mA Mounting: SMD Case: DPAK Kind of package: tube Max. off-state voltage: 1.2kV Max. forward voltage: 1.3V Load current: 8A Semiconductor structure: single diode Reverse recovery time: 270ns Max. forward impulse current: 150A Leakage current: 4mA Type of diode: rectifying Features of semiconductor devices: fast switching; glass passivated |
auf Bestellung 1675 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-8EWF12S-M3 | Hersteller : Vishay Semiconductors |
Rectifiers 8A 1200V Single Die |
auf Bestellung 1397 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-8EWF12S-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 8A TO252 Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 270 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
auf Bestellung 2572 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-8EWF12S-M3 | Hersteller : Vishay |
Rectifier Diode Switching Si 1.2KV 8A 270ns 3-Pin(2+Tab) DPAK Tube |
Produkt ist nicht verfügbar |
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VS-8EWF12S-M3 | Hersteller : Vishay |
Rectifier Diode Switching Si 1.2KV 8A 270ns 3-Pin(2+Tab) DPAK Tube |
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